| Patent application number | Description | Published |
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| 20080239586 | Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device - A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm | 10-02-2008 |
| 20080239591 | Magneto-resistance effect element, and method for manufacturing the same - A magneto-resistance effect element, including: | 10-02-2008 |
| 20110049090 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an etching protection layer, and an adhesion layer on a substrate, applying a resist on the adhesion layer, transferring patterns of protrusions and recesses on the resist by imprinting to form a resist pattern, patterning the adhesion layer by using the resist pattern as a mask, patterning the etching protection layer by using the resist pattern as a mask, etching the magnetic recording layer by using patterns of the adhesion layer and the etching protection layer as masks to form patterns of protrusions and recesses of the magnetic recording layer and removing the pattern of the adhesion layer, stripping the pattern of the etching protection layer, and exposing the patterns of protrusions and recesses of the magnetic recording layer to a non-ionized reducing gas. | 03-03-2011 |
| 20110261478 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS - According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni. | 10-27-2011 |
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| 20080205137 | SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD OF THE SAME - A semiconductor memory device includes a memory cell array, a voltage generating circuit, a memory circuit which stores a reference pulse number of an advance-write voltage of the memory cell array and a parameter, and a control circuit which controls, when a pulse number of the advance-write voltage is less than the reference pulse number of the advance-write voltage, the voltage generating circuit in a manner to decrease at least an initial value of a write voltage and a step-up width of the write voltage in accordance with the parameter. | 08-28-2008 |
| 20090008680 | SEMICONDUCTOR INTERGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device includes a semiconductor chip, a memory cell array arranged on the semiconductor chip and first and second decoder strings arranged along both ends of the memory cell array. The arrangement position of the first decoder string is deviated from the arrangement position of the second decoder string and a space caused by the deviation is arranged in the corner of the semiconductor chip. | 01-08-2009 |
| 20090278190 | Nonvolatile semiconductor memory - A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable memory cell transistors disposed at intersections of the data transfer lines and the data select lines. It further includes: a memory cell array block in which the memory cell units are disposed along the data select lines; first source lines, connected to one end of the memory cell units, and aligned along the data select lines; and second source lines electrically connected to the first source lines, and disposed along the data select lines. | 11-12-2009 |
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| 20080217623 | OPTICAL SENSOR ELEMENT AND METHOD FOR DRIVING THE SAME - An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage V | 09-11-2008 |
| 20090079725 | DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - A display device includes: a drive circuit supplying a first signal voltage and a first reverse bias in a first frame time period, and supplying a second signal voltage and a second reverse bias in a second frame time period subsequent to the first frame time period; a first drive TFT receiving the first signal voltage to supply a first drive current based on the first signal voltage in the first frame time period, and receiving the second reverse bias in the second frame time period; a second drive TFT receiving the first reverse bias in the first frame time period, and receiving the second signal voltage to supply a second drive current based on the second signal voltage in the second frame time period; and a display element emitting light based on the first drive current in the first frame time period and emitting light based on the second drive current in the second frame time period. | 03-26-2009 |
| 20090242781 | X-RAY DETECTOR - An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential. | 10-01-2009 |
| 20090244045 | DISPLAY DEVICE AND A DRIVING METHOD OF THE DISPLAY DEVICE - This disclosure concerns a display device including an n-type drive transistor controlling a current flowing the light emitting element; a bias transistor; a Vt detection transistor; a capacitor; a scanning transistor, wherein before setting the first electrode of the capacitor to have the threshold voltage of the drive transistor, the bias transistor connects a first signal line to the gate of the drive transistor to apply the negative bias to the gate of the drive transistor, the scanning line driver sets the first electrode to have a higher level potential than the threshold voltage of the drive transistor, and the Vt detection transistor connects the gate to the drain of the drive transistor to set the first electrode to have the threshold voltage of the drive transistor. | 10-01-2009 |
| 20090250708 | THIN-FILM PHOTODIODE AND DISPLAY DEVICE - A thin-film photodiode has a substrate, a thin-film element formed on the substrate and a micro lens formed above the thin-film element. The thin-film element includes a first semiconductor layer of p-type semiconductor formed on the substrate, a second semiconductor layer formed in contact with the first semiconductor layer on the substrate and formed of i-type semiconductor or p-type semiconductor having lower impurity concentration than the first semiconductor layer and a third semiconductor layer formed of an n-type semiconductor layer formed in contact with the second semiconductor layer on the substrate. The position of an optical axis center of the lens is set between a boundary between the second and third semiconductor layers and a lateral center of the second semiconductor layer. | 10-08-2009 |
| 20090251496 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - This disclosure concerns a display device including: scanning lines; data lines; a drive transistor controlling a current through a light emitting element; a bias transistor connected between a gate of the drive transistor and a first signal line transmitting a negative bias lower than a potential of the second power supply; a Vt detection transistor setting a threshold voltage of the drive transistor; a capacitor applying a potential difference between gate-source of the drive transistor; a scanning transistor setting a potential of the data line to the second electrode; a scanning line driver; and a data line driver transmitting potential data to the pixel columns, wherein before setting the threshold voltage to the first electrode, the bias transistor connects the first signal line to the gate of the drive transistor and applies the negative bias to the gate of the drive transistor. | 10-08-2009 |
| 20110164025 | DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - [Problem] By improving the accuracy of compensation for a threshold voltage shift of a driving transistor that controls a current supplied to a current-driven type self light-emitting element, excellent display performance is maintained over an extended period of time. | 07-07-2011 |
| 20110168909 | X-RAY DETECTOR | 07-14-2011 |
