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| 20110102443 | Virtualized GPU in a Virtual Machine Environment - Methods and systems are disclosed for virtualizing a graphics accelerator such as a GPU. In one embodiment, a GPU can be paravirtualized. Rather than modeling a complete hardware GPU, paravirtualization may provide for an abstracted software-only GPU that presents a software interface different from that of the underlying hardware. By providing a paravirtualized GPU, a virtual machine may enable a rich user experience with, for example, accelerated 3D rendering and multimedia, without the need for the virtual machine to be associated with a particular GPU product. | 05-05-2011 |
| 20110141123 | Push Pull Adaptive Capture - In various embodiments, a screen image may be divided into rectangles, and a capture component may track changed rectangles and capture the screen upon receiving an indication. For small screen updates, the capture rate may be set to ˜30 captures per second to provide a lower latency. As the screen update size increases, the capture rate may be decreased to match an allocated bandwidth. The capture rate may be increased when available bandwidth increases and decreased as bandwidth decreases. For example, the capture rate may be decreased when downstream back pressure meets predefined criteria. The capture rate change may be effected gradually to avoid jerks and jumps. Varying the capture rate by also enable audio/video synchronization with varying bandwidth variations. Some embodiments may be extended to multiple monitor solutions. | 06-16-2011 |
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| 20110084779 | BULK ACOUSTIC WAVE RESONATOR AND METHOD OF FABRICATING SAME - An acoustic resonator with improved quality factor and electro-mechanical coupling is disclosed. In one embodiment, the acoustic resonator includes an acoustic mirror formed on the top surface of a substrate or in the substrate, a first electrode having a end portion, formed on the acoustic mirror, a piezoelectric layer formed on the first electrode; and a second electrode formed on the piezoelectric layer, where at least one of the first electrode and the second electrode and the piezoelectric layer define an air gap in a region that overlaps the end portion of the first electrode. In one embodiment, a dielectric film is deposited on the surface of the end portion of the first electrode to form completely planarized surface before the piezoelectric layer deposition. In another embodiment, an air gap between the second electrode and the piezoelectric layer, so that the piezoelectric coupling in the end portion area of the first electrode is minimally contributed into the whole resonator. | 04-14-2011 |
| 20110148547 | PIEZOELECTRIC RESONATOR STRUCTURE - A piezoelectric resonator structure, comprising: (i) a substrate, (ii) an acoustic mirror, (iii) a first electrode, (iv) a piezoelectric layer, and (v) a second electrode, wherein each of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer, and the second electrode has a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. A plurality of air gaps and interference structures is formed at the first end portion of the piezoelectric layer and the second electrode, and the second end portion of the piezoelectric layer and the second electrode to enhance the performance of the piezoelectric resonator. | 06-23-2011 |
| 20110227671 | TEMPERATURE COMPENSATED THIN FILM ACOUSTIC WAVE RESONATOR - The present invention in one aspect relates to an acoustic wave resonator having an acoustic reflector, a piezoelectric layer, a composite structure having a first electrode, a temperature compensation layer formed on the first electrode, having one or more vias or trenches formed therein, and a second electrode formed on the temperature compensation layer and electrically connected to the first electrode at least through the one or more vias or trenches, and a third electrode, where the composite structure is disposed under the piezoelectric layer, on the piezoelectric layer, or inside the piezoelectric layer. | 09-22-2011 |
| 20110277286 | METHODS FOR WAFER LEVEL TRIMMING OF ACOUSTICALLY COUPLED RESONATOR FILTER - In one aspect of the present invention, a method of manufacturing an acoustically coupled device includes the steps of providing a substrate; forming a sacrificial layer in or on a selected portion of the substrate; forming a first resonator on the sacrificial layer such that the first resonator has an edge portion extending onto the substrate; trimming the first resonator to a targeted frequency value within a desired tolerance; forming an acoustic decoupler on the first resonator; forming a second resonator on the acoustic decoupler; removing the sacrificial layer to form an air cavity beneath the bottom surface of the first resonator; and trimming the second resonator to achieve a desired device performance. | 11-17-2011 |
| 20110304412 | Acoustic Wave Resonators and Methods of Manufacturing Same - In one aspect of the invention, the acoustic wave resonator includes a substrate defined an air cavity, a first passivation layer formed on the substrate and over the air cavity, a seed layer formed on the passivation layer, a bottom electrode formed on the seed layer, a piezoelectric layer formed on the bottom electrode, a top electrode formed on the piezoelectric layer, and a second passivation layer formed on the top electrode. | 12-15-2011 |
| 20120007696 | COUPLED ACOUSTIC DEVICES - In one aspect of the invention, an acoustic device has a first coupled resonator filter (CRF) and a second CRF electrically coupled to one another in series. Each CRF has an input port, an output port, a bottom film bulk acoustic resonator (FBAR), an acoustic decoupler formed on the bottom FBAR, and a top FBAR formed on the acoustic decoupler. Each FBAR has a bottom electrode, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. The decoupling layer capacitance arising between the two electrodes enclosing the acoustic decoupler in a CRF is configured to achieve targeted filter response. A compensating capacitance is introduced to improve the amplitude and phase imbalance performance of an unbalanced to balanced CRF by eliminating the existence of asymmetric port-to-ground or feedback capacitance at the balanced output port produced by the decoupling layer capacitance. | 01-12-2012 |
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| 20080224164 | Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film - A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter. | 09-18-2008 |
| 20080305566 | Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer - A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced. | 12-11-2008 |
| 20090040599 | Optical Waveguide Amplifier Using High Quantum Efficiency Silicon Nanocrystal Embedded Silicon Oxide - A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip. | 02-12-2009 |
| 20090058266 | Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device - A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers. | 03-05-2009 |
| 20090232449 | Erbium-Doped Silicon Nanocrystalline Embedded Silicon Oxide Waveguide - An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er | 09-17-2009 |
| 20090294885 | Silicon Nanoparticle Embedded Insulating Film Photodetector - A photodetector is provided with a method for fabricating a semiconductor nanoparticle embedded Si insulating film for photo-detection applications. The method provides a bottom electrode and introduces a semiconductor precursor and hydrogen. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a semiconductor nanoparticle embedded Si insulating film is formed, where the Si insulating film includes either N or C elements. For example, the Si insulating film may be a non-stoichiometric SiO | 12-03-2009 |
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| 20090059802 | DEVICE, SYSTEM AND METHOD FOR DIAGNOSING INTERWORKING FAULT OF X DIGITAL SUBSCRIBER LINE TRANSCEIVERS - A device, system and method for diagnosing an interworking fault of x Digital Subscriber Line (xDSL) transceivers are disclosed. The xDSL transceivers in the system include an xTU-C and an xTU-R. The system further includes: a message collection module adapted to collect and save the interaction messages transmitted between the xTU-C and the xTU-R during the activation of an xDSL line; and a fault analysis module adapted to analyze the collected interaction messages to obtain the first diagnosis conclusion with respect to the interworking fault. | 03-05-2009 |
| 20090122743 | METHOD, SYSTEM AND MEDIA GATEWAY FOR REALIZING MOBILE SWITCH CENTER POOL - The disclosure provides a method for realizing a Mobile Switch Center (MSC) pool, a system for realizing an MSC pool and a Media Gateway (MGW). The method for realizing an MSC pool includes: connecting with a Base Station Controllers (BSC)/Radio Network Controller (RNC), by a Media Gateway (MGW) through the use of a common signaling point; and upon receipt of a message whose destination signaling point is the common signaling point from the BSC/RNC, determining, by the MGW, a destination MSC server of the message according to ID information carried in the message, and sending the received message to the destination MSC server. According to the present invention, the networking scheme for an MSC pool may be implemented without upgrading any BSC/RNC. The flexibility of the networking scheme for mobile communication systems may be improved, and the traffic load of the subscribers may be shared. | 05-14-2009 |
| 20090190644 | METHOD AND APPARATUS FOR QUICKLY DIAGNOSING INTER-COMMUNICATION PROBLEM OF DIGITAL SUBSCRIBER LINE TRANSCEIVERS - A method for quickly diagnosing inter-communication problem of digital subscriber line transceivers, which records the interactive messages between central office xDSL terminal unit (xTU-C) and remote xDSL terminal unit (xTU-R), amends specific message of said interactive messages, executes interactive test utilizing amended message, and analyzes the result of said test to confirm the reason of inter-communication problem. The embodiments also provide an apparatus for quickly diagnosing inter-communication problem of digital subscriber line transceivers. The embodiments efficiently resolve the inter-communication problem between xTU-C and xTU-R which are different xDSL transceivers, provide convenience to telecommunication service provider and telecommunication device maintenance personnel, and save the cost. Device maintenance personnel can quickly, efficiently and accurately resolve inter-communication problem of xDSL devices, so as to simplify processing flow, reduce workload and difficulty, save substantive cost, and improve efficiency. | 07-30-2009 |
| 20090209252 | METHOD, SYSTEM AND DEVICE FOR CALLED PARTY RECOVERY IN MOBILE SWITCH CENTER POOL - A method for called party recovery in an MSC Pool, applied in a system that comprises an HLR and an MSC Pool including multiple MSC/VLRs, includes configuring a backup server for each MSC/VLR in the MSC Pool; if an MSC/VLR serving a user is down, the user has not initiated any calling service or location update and the user is called, further includes: the HLR sending a call signaling to the backup server of the MSC/VLR that is down; the backup server of the MSC/VLR initiating a paging request to the user and initiating a location update for the user to the HLR; the HLR registering user data of the user at the backup server and switching the MSC/VLR serving the user to the backup server. The present invention also discloses other methods, systems and devices, which can solve the problem of called party recovery in the MSC Pool. | 08-20-2009 |
| 20090290542 | METHOD, DEVICE AND SYSTEM FOR ESTABLISHING A BEARER FOR A GSM NETWORK - A method for establishing a bearer for a GSM network is disclosed in embodiments of the present invention. The method includes: receiving, by a Media Gateway, a message for adding a wireless side end point, assigning an IP address and a port number for a call and transmitting a response message containing the IP address and the port number assigned for the call; acquiring, by the Media Gateway, the IP address and the port number assigned for the call by the Base Station Controller via the Mobile Switching Center Server and establishing an IP bearer with the Base Station Controller. A device and a system for establishing a bearer for a GSM network are also disclosed in embodiments of the present invention. With the present invention, a full or part path transcoder-free operation may be realized, which can avoid quality reduction and transmission delay. | 11-26-2009 |
