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Hao-Chung Kuo
Hao-Chung Kuo, Yonghe City TW
| Patent application number | Description | Published |
|---|---|---|
| 20110044365 | SURFACE-EMITTING LASER DEVICE - A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index n | 02-24-2011 |
Hao-Chung Kuo, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090159916 | LIGHT SOURCE WITH REFLECTIVE PATTERN STRUCTURE - A light source includes a substrate and a light-emitting unit. The substrate has a pattern structure, which includes a plurality of concave-convex structures. The light-emitting unit is formed on the pattern structure, and has a backlight surface connected to the pattern structure and a light outputting surface disposed opposite the backlight surface. The pattern structure reflects light, which is outputted from the light-emitting unit in a direction toward the backlight surface, to the light outputting surface. | 06-25-2009 |
| 20090163003 | MANUFACTURING METHOD OF SELF-SEPARATION LAYER - A manufacturing method of a self separation layer includes the steps of: forming a plurality of convex portions on a substrate; growing a main material layer on the convex portions; and separating the main material layer from the substrate. | 06-25-2009 |
| 20100040859 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same - The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties. | 02-18-2010 |
| 20100261001 | NANOSTRUCTURED THIN-FILM FORMED BY UTILIZING OBLIQUE-ANGLE DEPOSITION AND METHOD OF THE SAME - The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties. | 10-14-2010 |
| 20110024880 | NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE - A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved. | 02-03-2011 |
Hao-Chung Kuo, Jhubei City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100323506 | Method for fabricating semiconductor substrates and semiconductor devices - A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products. | 12-23-2010 |
Hao-Chung Kuo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20080305568 | Method for promoting light emission efficiency of LED using nanorods structure - Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED. | 12-11-2008 |
| 20100213440 | Silicon-Quantum-Dot Semiconductor Near-Infrared Photodetector - A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response. | 08-26-2010 |
Hao-Chung Kuo, Taipei TW
| Patent application number | Description | Published |
|---|---|---|
| 20090020772 | LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME - A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface. | 01-22-2009 |
Hao-Chung Kuo, North Hsin-Tsu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20080199653 | Method of forming two-dimensional pattern by using nanospheres - The present invention relates to a method of forming a two-dimensional pattern, which includes: dispersing a plurality of spheres on a substrate; using the spheres to form a mask on the substrate; etching the substrate; and removing the mask from the substrate. In addition, the present invention further relates to a method of processing a surface of a substrate, which includes: dispersing a plurality of spheres on the surface of the substrate; depositing a substance among the spheres; and removing the spheres to leave the deposited substance on the surface of the substrate. The method of the present invention achieves a quicker and simpler process with a lower cost. In addition, a light emitting device manufactured through the method of the present invention has preferred light extraction efficiency and a variable radiation field pattern. | 08-21-2008 |
Hao-Chung Kuo, Hjubei City TW
| Patent application number | Description | Published |
|---|---|---|
| 20110233519 | Fabrication of GaN Substrate by Defect Selective Passivation - Defect selective passivation in semiconductor fabrication for reducing defects. | 09-29-2011 |
Hao-Chung Kuo, Hsinchu County TW
| Patent application number | Description | Published |
|---|---|---|
| 20120028446 | METHOD FOR FABRICATING GROUP III-NITRIDE SEMICONDUCTOR - A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again. | 02-02-2012 |