Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Hao-Chun
Hao-Chun Cheng, Dongang Township TW
| Patent application number | Description | Published |
|---|---|---|
| 20110316034 | Side By Side Light Emitting Diode (LED) Having Separate Electrical And Heat Transfer Paths And Method Of Fabrication - A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect. | 12-29-2011 |
Hao-Chun Cheng, Pingtung County TW
| Patent application number | Description | Published |
|---|---|---|
| 20120074384 | PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES - Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed. | 03-29-2012 |
Hao-Chun Cheng, Donggang Township TW
| Patent application number | Description | Published |
|---|---|---|
| 20080308829 | VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided. | 12-18-2008 |
| 20090093075 | METHOD OF SEPARATING SEMICONDUCTOR DIES - A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies. | 04-09-2009 |
| 20100258834 | VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided. | 10-14-2010 |
| 20110101400 | LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING - Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device. | 05-05-2011 |
| 20110217799 | METHOD OF SEPARATING SEMICONDUCTOR DIES - A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies. | 09-08-2011 |
| 20110316039 | VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided. | 12-29-2011 |
Hao-Chun Hsieh, Hsichih TW
| Patent application number | Description | Published |
|---|---|---|
| 20110141714 | METAL SHIELDING CAN AND ASSEMBLY OF THE METAL SHIELDING CAN AND A CIRCUIT BOARD - A metal shielding can includes a top wall and a surrounding wall. The surrounding wall extends downwardly from a periphery of the top wall, and includes a bottom surface and a groove formed in the bottom surface for receiving a tin solder element. The strength of the tin solder element to bond the metal shielding can to a circuit board can thus be enhanced so that the metal shielding can can be secured firmly on the circuit board. Moreover, the tin solder element can be positioned accurately relative to a solder pad of the circuit board, so that the post-soldering precision is easy to control and there is no solder overflow or adverse effect on an electronic component mounted on the circuit board. Thus, rework yield can be enhanced considerably to reduce manufacturing costs. | 06-16-2011 |
Hao-Chun Lee, Jhunan Township TW
| Patent application number | Description | Published |
|---|---|---|
| 20080238841 | System for displaying images - A system for displaying images is disclosed. A display panel having a multi-domain pixel structure comprises a plurality of electrodes that are physically separated form one another, each defining a domain within pixel, and a capacitance element, electrically connecting the electrodes. | 10-02-2008 |
Hao-Chun Lee, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20110049495 | QUINOXALINE DERIVATIVES AND ORGANIC LIGHT-EMITTING DIODES COMPRISING THE SAME - A quinoxaline derivative represented by Formula (I) or (II) is provided. | 03-03-2011 |
| 20110198571 | ORGANIC COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE EMPLOYING THE SAME - Organic compounds and organic electroluminescence devices employing the same are provided. The organic compound has a chemical structure represented as follows: | 08-18-2011 |
| 20110285275 | ORGANOMETALLIC COMPOUND, ORGANIC ELECTROLUMINESCENCE DEVICE AND COMPOSITION EMPLOYING THE SAME - Organometallic compounds and organic electroluminescence devices and compositions employing the same are provided. The organic metal compound has a chemical structure represented by formula (I) or formula (II): | 11-24-2011 |
Hao-Chun Lee, Taitung City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100171894 | SYSTEM FOR DISPLAY IMAGES - A system for displaying images including a liquid crystal display panel is provided. The liquid crystal display panel includes a first substrate having at least one sub-pixel, a first transparent electrode layer disposed over the first substrate in the sub-pixel, a second substrate having an inner surface corresponding to the first substrate, a second transparent electrode layer disposed over the inner surface corresponding to the sub-pixel, wherein the second transparent electrode layer has only one pattern thereon, and a liquid crystal layer disposed between the first and the second substrates. The liquid crystal layer includes a plurality of liquid crystal molecules and the liquid crystal molecules are orthogonal to the first and the second substrates. | 07-08-2010 |