Patent application number | Description | Published |
20090130466 | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor - Organometallic precursor complexes containing a metal and ligands containing electron withdrawing groups are disclosed. The complexes are adapted to undergo exothermic adsorption on a fully passivated diffusion barrier layer and on a metal layer deposited on the diffusion barrier layer and to undergo exothermic reduction on the diffusion barrier layer and the metal layer. The metal is preferably copper. Use of the complexes in atomic layer deposition is also disclosed. | 05-21-2009 |
20090136677 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
20090136685 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
20100009546 | Aminosilanes for Shallow Trench Isolation Films - The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:
| 01-14-2010 |
20100038785 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers - We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium. | 02-18-2010 |
20100041243 | Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same - Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): | 02-18-2010 |
20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
20130189853 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 07-25-2013 |