Patent application number | Description | Published |
20110121364 | HETEROJUNCTION BIPOLAR TRANSISTOR - According to an example embodiment, a heterostructure bipolar transistor, HBT, includes shallow trench isolation, STI, structures around a buried collector drift region in contact with a buried collector. A gate stack including a gate oxide and a gate is deposited and etched to define a base window over the buried collector drift region and overlapping the STI structures. The etching process is continued to selectively etch the buried collector drift region between the STI structures to form a base well. SiGeC may be selectively deposited to form epitaxial silicon-germanium in the base well in contact with the buried collector drift region and poly silicon-germanium on the side walls of the base well and base window. Spacers are then formed as well as an emitter. | 05-26-2011 |
20110198591 | METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR - Disclosed is a method of forming a heterojunction bipolar transistor (HBT), comprising depositing a first stack comprising an polysilicon layer ( | 08-18-2011 |
20110269289 | TRANSISTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a transistor device ( | 11-03-2011 |
20120037914 | HETEROJUNCTION BIOPOLAR TRANSISTOR AND MANUFACTURING METHOD - A method of manufacturing a heterojunction bipolar transistor, including providing a substrate comprising an active region bordered by shallow trench insulation regions; depositing a stack of a dielectric layer and a polysilicon layer over the substrate; forming a base window in the stack, the base window extending over the active region and part of the shallow trench insulation regions, the base window having a trench extending vertically between the active region and one of the shallow trench insulation regions; growing an epitaxial base material inside the base window; forming a spacer on the exposed side walls of the base material; and filling the base window with an emitter material. A HBT manufactured in this manner and an IC including such an HBT. | 02-16-2012 |
20120086058 | TUNNEL FIELD EFFECT TRANSISTOR - A tunnel field effect transistor and a method of making the same. The transistor includes a semiconductor substrate. The transistor also includes a gate located on a major surface of the substrate. The transistor further includes a drain of a first conductivity type. The transistor also includes a source of a second conductivity type extending beneath the gate. The source is separated from the gate by a channel region and a gate dielectric. The transistor is operable to allow charge carrier tunnelling from an inversion layer through an upper surface of the source. | 04-12-2012 |
20120132961 | HETEROJUNCTION BIPOLAR TRANSISTOR MANUFACTURING METHOD AND INTEGRATED CIRCUIT COMPRISING A HETEROJUNCTION BIPOLAR TRANSISTOR - Disclosed is a method of manufacturing a heterojunction bipolar transistor comprising a substrate, an upper region of said substrate comprising an active region of the bipolar transistor bordered by shallow trench insulation, said active region comprising a buried collector region extending to a depth beyond the depth of the shallow trench insulation, the method comprising forming a trench in the substrate adjacent to said active region, said trench extending through the shallow trench insulation; at least partially filling said trench with an impurity; and forming a collector sinker in the substrate by developing said impurity to extend into the substrate to a depth beyond the depth of the shallow trench insulation. An IC comprising a heterojunction bipolar transistor manufactured by this method is also disclosed. | 05-31-2012 |
20120132999 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTOR - Consistent with an example embodiment, there is method of manufacturing a bipolar transistor comprising providing a substrate including an active region; depositing a layer stack; forming a base window over the active region in said layer stack; forming at least one pillar in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. Consistent with another example embodiment, a bipolar transistor may be manufactured according to the afore-mentioned method. | 05-31-2012 |
20130032891 | METHOD OF MANUFACTURING AN IC COMPRISING A PLURALITY OF BIPOLAR TRANSISTORS AND IC COMPRISING A PLURALITY OF BIPOLAR TRANSISTORS - A method of manufacturing an integrated circuit comprising bipolar transistors including first and second type bipolar transistors, the method comprising providing a substrate comprising first isolation regions each separated from a second isolation region by an active region comprising a collector impurity of one of the bipolar transistors; forming a base layer stack over the substrate; forming a first emitter cap layer of a first effective thickness over the base layer stack in the areas of the first type bipolar transistor; forming a second emitter cap layer of a second effective thickness different from the first effective thickness over the base layer stack in the areas of the second type bipolar transistor; and forming an emitter over the emitter cap layer of each of the bipolar transistors. An IC in accordance with this method. | 02-07-2013 |
20130056855 | METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC - Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation regions separated by an active region comprising a collector; forming a base layer stack over said substrate; forming a migration layer having a first migration temperature and an etch stop layer; forming a base contact layer having a second migration temperature; etching an emitter window in the base contact layer, thereby forming cavities extending from the emitter window; and exposing the resultant structure to the first migration temperature in a hydrogen atmosphere, thereby filling the cavities with the migration layer material. | 03-07-2013 |
20130087799 | BIPOLAR TRANSISTOR MANUFACTURING METHOD, BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 04-11-2013 |
20130178037 | METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR - A method of forming a heterojunction bipolar transistor by depositing a first stack comprising an polysilicon layer and a sacrificial layer on a mono-crystalline silicon substrate surface; patterning that stack to form a trench extending to the substrate; depositing a silicon layer over the resultant structure; depositing a silicon-germanium-carbon layer over the resultant structure; selectively removing the silicon-germanium-carbon layer from the sidewalls of the trench; depositing a boron-doped silicon-germanium-carbon layer over the resultant structure; depositing a further silicon-germanium-carbon layer over the resultant structure; | 07-11-2013 |
20140162426 | Bipolar transistor manufacturing method, bipolar transistor and integrated circuit - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 06-12-2014 |
20140167055 | METHOD OF PROCESSING A SILICON WAFER AND A SILICON INTEGRATED CIRCUIT - Methods and systems for processing a silicon wafer are disclosed. A method includes providing a flash memory region in the silicon wafer and providing a bipolar transistor with a polysilicon external base in the silicon wafer. The flash memory region and the bipolar transistor are formed by depositing a single polysilicon layer common to both the flash memory region and the bipolar transistor. | 06-19-2014 |
20150041862 | METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC - Disclosed is a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate ( | 02-12-2015 |