| Patent application number | Description | Published |
|---|
| 20100043872 | Photovoltaic Device With an Up-Converting Quantum Dot Layer and Absorber - A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material. | 02-25-2010 |
| 20100044675 | Photovoltaic Device With an Up-Converting Quantum Dot Layer - A photovoltaic apparatus includes an absorber layer, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a plurality of quantum dots of first material in a matrix of a second material. In one example, the first material has a lower bandgap than the absorber layer, and the second material comprises a semiconductive material or an insulator. | 02-25-2010 |
| 20100047595 | Thin Film Template For Fabrication of Two-Dimensional Quantum Dot Structures - An apparatus includes a first seedlayer including a hexagonal close-packed alloy with a sigma phase addition, and an active layer including a plurality of quantum dots on the first seedlayer. The apparatus can further include a substrate, an adhesion layer on the substrate, and a wetting layer on the adhesion layer, wherein the first seedlayer is on the wetting layer. | 02-25-2010 |
| 20100051095 | Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers With Wide Bandgap Dopant Layers and an Up-Converter - A photovoltaic apparatus includes an absorber including a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an amorphous SiGe intrinsic layer between the p-layer and the n-layer; a first electrode adjacent to a first side of the absorber; a second electrode adjacent to a second side of the absorber; and an up-converter layer positioned adjacent to the second electrode on an opposite side of the second electrode from the absorber, wherein the up-converter layer includes a plurality of quantum dots of a first material in a matrix of a second material. | 03-04-2010 |
| 20100053809 | EMBEDDED SERVO ON TRACK FOR BIT-PATTERNED MEDIA (BPM) - A method of making a disc for a computer disc drive and a disc made in accordance with the same. The disc includes a deposited magnetic layer of a thin film medium over a disc-shaped substrate. A master pattern having a plurality of tracks is recorded on the disc. Each track on the disc includes a plurality of magnetic islands, each having a size and magnetic properties. The size and/or magnetic properties of one or more of the magnetic islands of each track are modulated such that each track has a modulation frequency, so as to imprint a magnetic topology on the disc. The modulation frequency of each track is either a fundamental frequency or an overtone of the fundamental frequency. | 03-04-2010 |
| 20100073809 | X-AMR ASSISTED RECORDING ON HIGH DENSITY BPM MEDIA - A method of writing information to an area of a bit-patterned medium, in which a magnetized probe generates a magnetic probe field at the area of bit-patterned medium to be written, applying an oriented static magnetic field, and applying an oriented microwave field at a selected frequency, resulting in the writing of information onto the area of bit-patterned media. | 03-25-2010 |
| 20100124671 | LOW COUPLING OXIDE MEDIA (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm | 05-20-2010 |
| 20100147380 | Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers and Wide Bandgap Dopant Layers - A photovoltaic apparatus includes a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an absorber layer between the p-layer and the n-layer, wherein the absorber layer includes SiGe. The ratio of Si to Ge in the absorber layer can be selected to obtain an absorber bandgap between about 1.1 and about 1.4 eV. | 06-17-2010 |
| 20100266755 | FERROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction. | 10-21-2010 |
| 20110076515 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 03-31-2011 |
