| Patent application number | Description | Published |
|---|
| 20080212170 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; | 09-04-2008 |
| 20080278699 | Method For Distortion Correction In A Microlithographic Projection Exposure Apparatus - For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens. | 11-13-2008 |
| 20080285121 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane;
| 11-20-2008 |
| 20080297889 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane;
| 12-04-2008 |
| 20080310014 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; | 12-18-2008 |
| 20080315134 | OPTICAL SYSTEM FOR RADIATION IN THE EUV-WAVELENGTH RANGE AND METHOD FOR MEASURING A CONTAMINATION STATUS OF EUV-REFLECTIVE ELEMENTS - An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation. | 12-25-2008 |
| 20090015951 | PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE - A method of manufacturing a projection objective ( | 01-15-2009 |
| 20090021713 | ILLUMINATION SYSTEM AND MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS INCLUDING SAME - The disclosure relates an illumination system configured to guide illumination light from a radiation source to an object plane and to provide defined illumination of an object field in the object plane, wherein illumination light is supplied to the object field by a bundle-guiding optical pupil component which is disposed in a pupil plane of the projection objective, and wherein at least another bundle-guiding component is disposed upstream of the pupil component in the beam path of the illumination light. The disclosure further concerns a projection exposure apparatus that includes such an illumination system of this type, a method of fabricating a microstructured component using such a projection exposure apparatus, and a microstructured component fabricated using such a method. | 01-22-2009 |
| 20090021714 | COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT - The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods. | 01-22-2009 |
| 20090027644 | PROJECTION OBJECTIVE - The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods. | 01-29-2009 |
| 20090046357 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength λ from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about λ or more at one or more locations of the rotationally-asymmetric surface. | 02-19-2009 |
| 20090051890 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM, TOOL AND METHOD OF PRODUCTION - A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths. | 02-26-2009 |
| 20090052073 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE - In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components. | 02-26-2009 |
| 20090073392 | Illumination System Including Grazing Incidence Mirror For Microlithography Exposure System - In general, in one aspect, the invention features a system that includes a catoptric projection objective having an optical axis and including a plurality of projection objective elements positioned between an object plane and an image plane, the object and image planes being orthogonal to the optical axis, the projection objective being configured so that during operation the projection objective directs radiation reflected at the object plane to the image plane to form an image at the image plane of an object positioned in a field at the object plane, the field having a first dimension of 8 mm or more and a second dimension of 8 mm or more, the first and second dimensions being along orthogonal directions. The system also includes an illumination system including a plurality of illumination system elements, the illumination system being configured so that during operation the illumination system directs the radiation to the field at the object plane, where a chief ray of the radiation has an angle of incidence of 10° or less at the object plane. | 03-19-2009 |
| 20090073398 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification. | 03-19-2009 |
| 20090073410 | ILLUMINATION SYSTEM PARTICULARLY FOR MICROLITHOGRAPHY - There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis. | 03-19-2009 |
| 20090079952 | SIX-MIRROR EUV PROJECTION SYSTEM WITH LOW INCIDENCE ANGLES - The invention relates to a projection system for guiding light with wavelengths ≦193 nm from an object plane to an image plane, comprising at least a first mirror (M | 03-26-2009 |
| 20090190208 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 07-30-2009 |
| 20090213345 | Microlithography exposure apparatus using polarized light and microlithography projection system having concave primary and secondary mirrors - The present invention relates to a microlithography projection exposure apparatus for wavelengths ≦100 nm, in particular for EUV lithography using wavelengths <50 nm, preferably <20 nm having an illumination system which illuminates a field in an object plane using light of a defined polarization state and an objective which projects the field in the object plane into an image plane, the polarized light passing through the objective from the object plane to the image plane. | 08-27-2009 |
| 20090262443 | CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength λ from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about λ or more at one or more locations of the rotationally-asymmetric surface. | 10-22-2009 |
| 20090268189 | MASKS, LITHOGRAPHY DEVICE AND SEMICONDUCTOR COMPONENT - One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall. | 10-29-2009 |
| 20090316128 | ILLUMINATION SYSTEM PARTICULARLY FOR MICROLITHOGRAPHY - There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis. | 12-24-2009 |
| 20100014153 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 01-21-2010 |
| 20100033696 | METHOD AND APPARATUS FOR PRODUCING AN ELEMENT HAVING AT LEAST ONE FREEFORM SURFACE HAVING A HIGH ACCURACY OF FORM AND A LOW SURFACE ROUGHNESS - A method for producing an element having at least one arbitrarily freely formed surface (freeform surface) having a high accuracy of form and a low surface roughness. The freeform surface is obtained by at least one first processing step with a shaping material processing method in which at least an approximation to the desired freeform surface (target form) is effected, and at least one second step with a material processing method that smooths the surface, wherein at least during the second processing step of the smoothing material processing, the element ( | 02-11-2010 |
| 20100134880 | PROJECTION OBJECTIVE - The disclosure relates to a projection objective for imaging an object field in an object plane having a field aspect ration (x/y) of at least 1.5 into an image field in an image plane. In general, the projection objective has at least two optically effective surfaces for guiding imaging light in a beam path between the object field and the image field. The projection objective can take up an installed space having a cuboid envelope that is spanned by a length dimension and two transverse dimensions. | 06-03-2010 |
| 20100134907 | MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE - In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components. | 06-03-2010 |
| 20100142042 | MICROSCOPE AND MICROSCOPY METHOD FOR SPACE-RESOLVED MEASUREMENT OF A PREDETERMINED STRUCTURE, IN PARTICULAR A STRUCTURE OF A LITHOGRAPHIC MASK - A microscope is provided for space-resolved measurement of a predetermined structure ( | 06-10-2010 |
| 20100149517 | PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE - A method of manufacturing a projection objective ( | 06-17-2010 |
| 20100149632 | Optical imaging device and imaging method for microscopy - The present invention relates to an optical imaging device, in particular for microscopy, with a first optical element group and a second optical element group, wherein the first optical element group and the second optical element group, on an image plane, form an image of an object point of an object plane via at least one imaging ray having an imaging ray path. The first optical element group comprises a first optical element with a reflective first optical surface in the imaging ray path and a second optical element with a reflective second optical surface in the imaging ray path, wherein the first optical surface is concave. The second optical element group comprises a third optical element with a concave reflective third optical surface in the imaging ray path and a fourth optical element with a convex reflective fourth optical surface in the imaging ray path without light passage aperture. | 06-17-2010 |
| 20100195075 | PROJECTION OBJECTIVE HAVING MIRROR ELEMENTS WITH REFLECTIVE COATINGS - An optical system is disclosed that includes a plurality of elements arranged to image radiation at a wavelength λ from an object field in an object surface to an image field in an image surface. The elements include mirror elements having a reflective surface formed by a reflective coating positioned at a path of radiation. At least one of the mirror elements has a rotationally asymmetrical reflective surface deviating from a best-fit rotationally symmetric reflective surface by about λ or more at one or more locations. The elements include an apodization correction element effective to correct a spatial intensity distribution in an exit pupil of the optical system relative to the optical system without the apodization correcting element. The apodization correction element can be effective to increase symmetry of the spatial intensity distribution in the exit pupil relative to the optical system without the apodization correcting element. | 08-05-2010 |
| 20100208225 | PROJECTION OBJECTIVE FOR MICRLOLITHOGRAPHY HAVING AN OBSCURATED PUPIL - A projection objective with obscurated pupil for microlithography has a first optical surface, which has a first region provided for application of useful light, and at least one second optical surface, which has a second region provided for application of useful light. A beam envelope of the useful light extends between the first region and the second region. At least one tube open on the input side and on the output side in the light propagation direction severs to screen scattered light. The at least one tube is between the first optical surface and the second optical surface. The wall of the tube is opaque in the wavelength range of the useful light. The tube extends in the propagation direction of the useful light over at least a partial length of the beam envelope and circumferentially surrounds the beam envelope. | 08-19-2010 |
| 20100231884 | IMAGING OPTICAL SYSTEM AND RELATED INSTALLATION AND METHOD - An imaging optical system can image two object fields, each in the same object plane, into two corresponding image fields, each in the same image plane. The two object fields are spatially separated from each another, and the two image fields are spatially separated from each other. The imaging optical system can exhibit increased flexibility of use. | 09-16-2010 |
| 20100231885 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY - An imaging optical system includes a plurality of mirrors that image an object field in an object plane into an image field in an image plane. At least one of the mirrors is obscured, and thus has a opening for imaging light to pass through. The fourth-last mirror in the light path before the image field is not obscured and provides, with an outer edge of the optically effective reflection surface thereof, a central shadowing in a pupil plane of the imaging optical system. The distance between the fourth-last mirror and the last mirror along the optical axis is at least 10% of the distance between the object field and the image field. An intermediate image, which is closest to the image plane, is arranged between the last mirror and the image plane. The imaging optical system can have a numerical aperture of 0.9. These measures, not all of which must be effected simultaneously, lead to an imaging optical system with improved imaging properties and/or reduced production costs. | 09-16-2010 |
| 20100231886 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY INCLUDING AN IMAGING OPTICAL SYSTEM - In certain aspects, imaging optical systems with a plurality of mirrors image an object field in an object plane into an image field in an image plane. In the light path between non-obscured mirrors, imaging rays pass through at least one multiple pass-through region between spaced-apart planes which are arranged parallel to the object plane and/or parallel to the image plane. The imaging optical systems have at least one pupil plane. The pupil plane is arranged outside the multiple pass-through region between the non-obscured mirrors. This can provide an imaging optical system which provides for an easier correction of image errors | 09-16-2010 |
| 20100253999 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption. | 10-07-2010 |
| 20100265481 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION - An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm. | 10-21-2010 |
| 20100265572 | CATADIOPTRIC PROJECTION OBJECTIVE - A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter D | 10-21-2010 |
| 20110026003 | PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY - A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (d | 02-03-2011 |
| 20110063596 | PROJECTION OBJECTIVE AND PROJECTION EXPOSURE APPARATUS WITH NEGATIVE BACK FOCUS OF THE ENTRY PUPIL - The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane. | 03-17-2011 |
| 20110085179 | APPARATUS FOR MICROLITHOGRAPHIC PROJECTION EXPOSURE AND APPARATUS FOR INSPECTING A SURFACE OF A SUBSTRATE - An apparatus ( | 04-14-2011 |
| 20110090559 | PROJECTION OBJECTIVE FOR A MICROLITHOGRAPHIC EUV PROJECTION EXPOSURE APPARATUS - A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light. | 04-21-2011 |
| 20110122384 | IMAGING OPTICS - An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. At least one of the mirrors has a through opening for the passage of imaging light. An arrangement of the mirrors is such that principal rays run parallel or divergently in the beam path of the imaging light between the object plane and the first downstream mirror. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 5 m and 2000 m in front of the object plane. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 100 mm and 5000 mm in front of the object plane. Imaging optics with improved imaging quality are provided. | 05-26-2011 |
| 20110157572 | PROJECTION OPTICS FOR MICROLITHOGRAPHY - A projection optics for microlithography, which images an object field in an object plane into an image field in an image plane, where the projection optics include at least one curved mirror and including at least one refractive subunit, as well as related systems, components, methods and products prepared by such methods, are disclosed. | 06-30-2011 |
| 20110165522 | IMAGING OPTICAL SYSTEM - An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low. | 07-07-2011 |
