| Patent application number | Description | Published |
|---|
| 20080210304 | Photovoltaic Cell Comprising a Photovotaically Active Semi-Conductor Material Contained Therein - The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a material of the formula (I), of the formula (II) or of a combination thereof: | 09-04-2008 |
| 20080233391 | Photonic Crystals for Thermal Insulation - The invention relates to photonic crystals which have units having a refractive index of greater than 3 and units having a refractive index of less than 1.6 in a periodic sequence and separations of the individual units of from 1 to 20 μm, and also to the use of these photonic crystals. | 09-25-2008 |
| 20080305573 | Photovoltaically Active Semiconductor Material and Photovoltaic Cell - The invention relates to a photovoltaically active semiconductor material and a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material contains a crystal lattice composed of zinc telluride and, in the zinc telluride crystal lattice, ZnTe is substituted by—0.01 to 10 mol % CoTe, —0 to 10 mol % Cu | 12-11-2008 |
| 20090133744 | PHOTOVOLTAIC CELL - The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising mixed compounds of the formula (I): | 05-28-2009 |
| 20090133745 | PHOTOVOLTAIC CELL COMPRISING A PHOTOVOLTAIC ACTIVE SEMICONDUCTOR MATERIAL - The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II): | 05-28-2009 |
| 20090135545 | CAPACITORS HAVING A HIGH ENERGY DENSITY - The invention relates to a capacitor having a porous electrically conductive substrate on whose inner and outer surfaces a first layer of a dielectric and an electrically conductive second layer are applied. | 05-28-2009 |
| 20100282285 | EXTRUSION PROCESS FOR PREPARING IMPROVED THERMOELECTRIC MATERIALS - For a process for reducing the thermal conductivity and for increasing the thermoelectric efficiency of thermoelectric materials based on lead chalcogenides or skutterudites, the thermoelectric materials are extruded at a temperature below their melting point and a pressure in the range from 300 to 1 000 MPa. | 11-11-2010 |
| 20110163258 | MIXTURES OF ALKALI METAL POLYSULFIDES - The present invention relates to mixtures of alkali metal polysulfides and to mixtures of alkali metal polysulfides and alkali metal thiocyanates, to processes for preparation thereof, to the use thereof as heat transfer or heat storage fluids, and to heat transfer or heat storage fluids which comprise the mixtures of alkali metal polysulfides or the mixtures of alkali metal polysulfides and alkali metal thiocyanates. | 07-07-2011 |
| 20110163259 | HEAT TRANSFER FLUIDS AND HEAT STORAGE FLUIDS FOR EXTREMELY HIGH TEMPERATURES BASED ON POLYSULFIDES - A composition for the transport and storage of heat energy, which comprises alkali metal polysulfides of the formula (Me1 | 07-07-2011 |
