| Patent application number | Description | Published |
|---|
| 20090064477 | PIEZOELECTRIC OSCILLATING CIRCUIT, METHOD FOR MANUFACTURING THE SAME AND FILTER ARRANGEMENT - In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction. | 03-12-2009 |
| 20090087631 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
| 20090087632 | Wafer and Method for Producing a Wafer - A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
| 20090283866 | Semiconductor Substrate and a Method of Manufacturing the Same - The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×10 | 11-19-2009 |
| 20090298270 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction. | 12-03-2009 |
| 20090305486 | METHOD FOR PRODUCING A SEMICONDUCTOR LAYER - A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate. | 12-10-2009 |
| 20100001813 | Bulk Acoustic Wave Filter Device and a Method for Trimming a Bulk Acoustic Wave Filter Device - A bulk acoustic wave (BAW) filter device includes at least one first serial BAW resonator, at least one first shunt BAW resonator, at least one second serial BAW resonator or at least one second shunt BAW resonator. The resonance frequencies of the first and the second serial BAW resonators or the resonance frequencies of the first and the second shunt BAW resonators are detuned with respect to each other. | 01-07-2010 |
| 20100044838 | SEMICONDUCTOR COMPONENT WITH MARGINAL REGION - A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region. | 02-25-2010 |
| 20100188905 | Spin Device - According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current. | 07-29-2010 |
| 20100210091 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. | 08-19-2010 |
| 20110079882 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-07-2011 |
