Patent application number | Description | Published |
20090064477 | PIEZOELECTRIC OSCILLATING CIRCUIT, METHOD FOR MANUFACTURING THE SAME AND FILTER ARRANGEMENT - In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction. | 03-12-2009 |
20090087631 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
20090087632 | Wafer and Method for Producing a Wafer - A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
20090283866 | Semiconductor Substrate and a Method of Manufacturing the Same - The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×10 | 11-19-2009 |
20090298270 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction. | 12-03-2009 |
20090305486 | METHOD FOR PRODUCING A SEMICONDUCTOR LAYER - A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate. | 12-10-2009 |
20100001813 | Bulk Acoustic Wave Filter Device and a Method for Trimming a Bulk Acoustic Wave Filter Device - A bulk acoustic wave (BAW) filter device includes at least one first serial BAW resonator, at least one first shunt BAW resonator, at least one second serial BAW resonator or at least one second shunt BAW resonator. The resonance frequencies of the first and the second serial BAW resonators or the resonance frequencies of the first and the second shunt BAW resonators are detuned with respect to each other. | 01-07-2010 |
20100044838 | SEMICONDUCTOR COMPONENT WITH MARGINAL REGION - A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region. | 02-25-2010 |
20100188905 | Spin Device - According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current. | 07-29-2010 |
20100210091 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. | 08-19-2010 |
20110079882 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-07-2011 |
20120080686 | Semiconductor Devices and Methods of Manufacturing Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer. | 04-05-2012 |
20120086129 | Manufacturing of a Device Including a Semiconductor Chip - A method includes providing a semiconductor chip having a first main surface and a second main surface opposite to the first main surface. An electrically insulating material is deposited on the first main surface of the semiconductor chip using a plasma deposition method. A first electrically conductive material is deposited on the second main surface of the semiconductor chip using a plasma deposition method. | 04-12-2012 |
20120091564 | SEMICONDUCTOR COMPONENT WITH MARGINAL REGION - A semiconductor wafer is disclosed. One embodiment provides at least two semiconductor components each having an active region, and wherein at least one zone composed of porous material is arranged between the active regions of the semiconductor components. | 04-19-2012 |
20120256323 | METHOD FOR PROCESSING A SEMICONDUCTOR WAFER OR DIE, AND PARTICLE DEPOSITION DEVICE - According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die. | 10-11-2012 |
20130049176 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. | 02-28-2013 |
20130228929 | Protection Layers for Conductive Pads and Methods of Formation Thereof - In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line. | 09-05-2013 |
20130299848 | Semiconductor Packages and Methods of Formation Thereof - In one embodiment, a semiconductor package includes a vertical semiconductor chip having a first major surface on one side of the vertical semiconductor chip and a second major surface on an opposite side of the vertical semiconductor chip. The first major surface includes a first contact region and the second major surface includes a second contact region. The vertical semiconductor chip is configured to regulate flow of current from the first contact region to the second contact region along a current flow direction. A back side conductor is disposed at the second contact region of the second major surface. The semiconductor package further includes a first encapsulant in which the vertical semiconductor chip and the back side conductor are disposed. | 11-14-2013 |
20140061863 | METHOD FOR PRODUCING A SEMICONDUCTOR LAYER - A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate. | 03-06-2014 |
20140209852 | Semiconductor Device Including a Phase Change Material - A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature T | 07-31-2014 |
20140291809 | Semiconductor Substrate and a Method of Manufacturing the Same - The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×10 | 10-02-2014 |
20140319688 | Protection Layers for Conductive Pads and Methods of Formation Thereof - In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line. | 10-30-2014 |
20140327003 | Removable indicator structure in electronic chips of a common substrate for process adjustment - A method of processing a plurality of packaged electronic chips being connected to one another in a common substrate is provided, wherein the method comprises etching the electronic chips, detecting information indicative of an at least partial removal of an indicator structure following an exposure of the indicator structure embedded within at least a part of the electronic chips and being exposed after the etching has removed chip material above the indicator structure, and adjusting the processing upon detecting the information indicative of the at least partial removal of the indicator structure. | 11-06-2014 |