| Patent application number | Description | Published |
|---|
| 20090175465 | INTERFERENCE SIGNAL REMOVING APPARATUS AND RF RECEIVER USING THE SAME - An interference signal removing apparatus of a radio frequency (RF) receiver includes a low noise amplification unit which performs low noise amplification, a feedback processing unit which removes a necessary signal in a desired band from a signal output from the low noise amplification unit, and performs feedback of the signal from which the necessary signal is removed, and a signal processing unit which transmits a processed RF signal by synthesizing an input RF signal and the feedback signal to the noise amplification unit. | 07-09-2009 |
| 20090327793 | FINITE IMPULSE RESPONSE (FIR) FILTER WITHOUT DECIMATION - Provided is a discrete signal finite impulse response (FIR) filter and a filter set in which a plurality of FIR filter units are connected in a cascade structure to remove down-sampling by decimation, in order to improve the attenuation characteristics of a FIR filter, such as, for example, a switched capacitor filter. The FIR filter includes a clock generator generating a plurality of clock signals that are different from each other; and N+2 sub blocks each including N sample storage units, each sample storage unit storing a received sample. Each sub block being in a state among a number of possible states including N charging states for storing the received sample, a transfer state for outputting the stored sample and a reset state for operation initialization. The N charging states, the transfer state and the reset state are changed sequentially in response to the clock signals. | 12-31-2009 |
| 20100103731 | METHOD ANALYZING THRESHOLD VOLTAGE DISTRIBUTION IN NONVOLATILE MEMORY - A distribution analyzing method for a nonvolatile memory device having memory cells exhibiting overlapping first and second threshold voltage distributions includes; detecting a degree of overlap between the first and second threshold voltage distributions by reading data stored in the memory cells and determining read index data from the read data, and estimating a distribution characteristic for at least one of the overlapping threshold voltage distributions using the read index data. | 04-29-2010 |
| 20100142281 | Non-Volatile Memory Device and Program Method Thereof - Disclosed is a program method of a non-volatile memory device which comprises classifying plural memory cells into aggressor cells and victim cells based on program data to be written in the plural memory cells; and programming the aggressor cells by a program manner different from the victim cells. | 06-10-2010 |
| 20100149868 | Access method of non-volatile memory device - Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell. | 06-17-2010 |
| 20100265764 | Methods of accessing storage devices - Methods of accessing storage devices. The methods include rearranging a writing order of continuous first and second data according to a reading order, and writing the first and second data in a first and second storage region of the storage device, respectively, according to the writing order. The reading order reads the second storage region first that provides interference on the first storage region. | 10-21-2010 |
| 20100287447 | MEMORY SYSTEM IDENTIFYING AND CORRECTING ERASURE USING REPEATED APPLICATION OF READ OPERATION - Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates. | 11-11-2010 |
| 20100302850 | Storage device and method for reading the same - The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution. | 12-02-2010 |
| 20100306583 | Memory Systems and Defective Block Management Methods Related Thereto - Memory systems and related defective block management methods are provided. Methods for managing a defective block in a memory device include allocating a defective block when a memory block satisfies a defective block condition. The allocated defective block is cancelled when the allocated defective block satisfies a defective block cancellation condition. | 12-02-2010 |
| 20100321999 | NONVOLATILE MEMORY DEVICE AND RELATED PROGRAMMING METHOD - A method of programming a nonvolatile memory device comprises programming memory cells connected to a first wordline, programming memory cells connected to a second wordline, programming memory cells connected to a third line between the first wordline and the second wordline, and adjusting a threshold voltage of the memory cells connected to the first wordline to compensate for interference generated by the programming of the memory cells connected to the third wordline. | 12-23-2010 |
| 20100332737 | FLASH MEMORY PREPROCESSING SYSTEM AND METHOD - A flash memory preprocessing system comprises at least one flash memory device, a memory controller controlling program and read operations of the at least one flash memory device, and a flash preprocessor receiving program data from an external source, generating preprocessed data by converting the received program data, and outputting the preprocessed data to the memory controller. The memory controller controls the at least one flash memory device to perform a program operation on the at least one flash memory device according to the preprocessed data. | 12-30-2010 |
| 20110007563 | NONVOLATILE MEMORY DEVICE, SYSTEM, AND RELATED METHODS OF OPERATION - A method of reading a nonvolatile memory device comprises measuring threshold voltage distributions of a plurality of memory cells, combining the measured threshold voltage distributions, and determining local minimum points in the combined threshold voltage distributions to determine read voltages for a predetermined group of memory cells. | 01-13-2011 |
| 20110038207 | FLASH MEMORY DEVICE, PROGRAMMING AND READING METHODS PERFORMED IN THE SAME - The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through N | 02-17-2011 |
