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| 20080303622 | SPIRAL INDUCTOR - There is provided a spiral inductor including an insulation board formed into a flat-plate shape; a conductive pattern having a spiral shape and formed at least one surface of the insulation board, wherein the conductive pattern varies in line width according to a distance from one end of the conductive pattern forming a spiral. | 12-11-2008 |
| 20090039977 | BALUN TRANSFORMER - A balun transformer includes a first conductive pattern having one end provided as an input/output port of an unbalanced signal, a second conductive pattern electromagnetically coupled to the first conductive pattern and having both ends provided as input/output ports of a balanced signal, and a first variable capacitor connected between a ground part and a middle part of an electrical length of the second conductive pattern. | 02-12-2009 |
| 20100045369 | REFERENCE CURRENT GENERATING CIRCUIT USING ON-CHIP CONSTANT RESISTOR - Provided is a reference current generating circuit capable of maintaining a constant output level regardless of a temperature variation by the use of a reference resistor having a constant resistance regardless of the temperature variation. The reference current generating circuit includes a reference voltage circuit supplying a reference voltage having a constant level regardless of a temperature variation, and a reference resistor circuit comprising a resistor having a positive temperature coefficient and a resistor having a negative temperature coefficient that are connected in series, the reference resistor circuit having a constant total resistance regardless of the temperature variation. Herein, a reference current having a constant level regardless of the temperature variation is generated by the reference voltage and the resistance of the reference resistor circuit. | 02-25-2010 |
| 20100304703 | MULTIPLE FREQUENCY BAND HYBRID RECEIVER - A multiple frequency band hybrid receiver includes a plurality of input terminals to which different frequency band signals are respectively inputted; a plurality of mixers connected to the plurality of input terminals sequentially, receiving the different frequency band signals respectively, and down-converting frequencies of the received frequency band signals to predetermined frequencies; an output terminal outputting baseband signals. Each mixer receives a signal from an input terminal connected thereto or another mixer. One of the plurality of mixers receives the lowest frequency band signal, converts a frequency of the received signal to a baseband frequency, and provides a signal having the baseband frequency to the output terminal. The other mixers each down-convert a frequency of a received signal to a frequency band of a signal which is inputted into another mixer. | 12-02-2010 |
| 20110260723 | HALL DEVICE AND MAGNETIC SENSOR CIRCUIT - A Hall device includes: a main plate, formed as a first metal plate, including first and second terminals that can be selectively connected to a power source terminal, third and fourth terminals that can be selectively connected to a ground, fifth and sixth terminals that can be connected to first and third terminals, respectively, a first resistor disposed between the first and second terminals, a second resistor disposed between the fifth and sixth terminals, a third resistor disposed between the third and fourth terminals, and a fourth resistor disposed between the second and fourth terminals, all of which being formed on the first metal plate; and a first auxiliary plate, formed as a second metal plate adjacent to the first metal plate of the main plate, including first and second auxiliary terminals that can be connected to the first and third terminals, and a fifth resistor disposed between the first and second auxiliary terminals, all of which being formed on the second metal plate. | 10-27-2011 |
| 20120074999 | SCHMITT TRIGGER CIRCUIT OPERATED BASED ON PULSE WIDTH - There are provided a Schmitt trigger circuit that has hysteresis characteristics in which a release point and an operating point are determined based on a width of an inputted pulse. The Schmitt trigger circuit may include a signal/pulse conversion unit that receives an analog signal to generate an input pulse having a width corresponding to a magnitude of the analog signal, a pulse width determination unit that compares the width of the input pulse generated in the signal/pulse conversion unit with a predetermined first threshold width and a second threshold width greater than the first threshold width to output state information indicating the compared result, and an output determination unit that outputs a high signal, when the width of the input pulse is changed from a state of being smaller than the second threshold width to a state of being greater than the second threshold width based on the state information, and outputs a low signal when the width of the input pulse is changed from a state of being greater than the first threshold width to a state of being smaller thali the first threshold width based on the state information. | 03-29-2012 |
| 20120091994 | INTEGRATED APPARATUS FOR SENSING CURRENT - There is provided an integrated apparatus for sensing current including: a voltage regulator; a Hall effect device receiving current by the voltage regulator and outputting hall voltage in proportional to strength of a magnetic field; and a coil having one end connected to a first connecting terminal and the other end connected to a second connecting terminal, wound to have a plurality of turns along a circumference of the Hall effect device on the same plane spaced apart by a predetermined distance from the Hall effect device in a direction of the magnetic field, and forming the magnetic field according to current flowing through the first connecting terminal and the second connecting terminal, wherein the Hall effect device and the coil are integrated within one chip. A manufacturing cost of a product may be reduced, simultaneously with sensing the current without loss of the magnetic field according to a distance through the above-mentioned configuration. | 04-19-2012 |
| 20120112740 | HALL DEVICE MODULE EQUIPPED WITH INTERCONNECTED DOUBLE HALL DEVICES - There is provided a hall device module equipped with interconnected double hall devices. The hall device module includes: a first hall device having a first pair of terminals for excitation and a pair of output terminals; and a second hall device having a second pair of terminals for excitation and a pair of output terminals, wherein the first and second hall devices have the same equivalent circuit, the second hall device is disposed to be rotated by a predetermined angle based on the first hall device, a first terminal of the first pair of terminals is interconnected to a first terminal of the second pair of terminals to receive driving power for excitation, a second terminal of the first pair of terminals is interconnected to a second terminal of the second pair of terminals and is grounded, terminals outputting a positive component, which is a voltage rising according to an applied external magnetic field, among the pair of output terminals of the first hall device and the pair of output terminals of the second hall device, are interconnected, and terminals outputting a negative component, which is a voltage falling according to the applied external magnetic field, are interconnected, to thereby remove an offset. | 05-10-2012 |
| 20120119734 | HALL INTEGRATED CIRCUIT USING RECTIFIER CIRCUIT - There is provided a hall integrated circuit using a rectifier circuit including: a hall device receiving a power supply voltage for excitation and outputting a hall voltage which is in proportion to the intensity of an applied magnetic field; an amplifier amplifying the hall voltage; and a rectifying unit rectifying the amplified hall voltage to improve sensitivity and modify for user convenience by ensuring a high headroom at even a low power supply voltage. | 05-17-2012 |
| 20120119819 | CURRENT CIRCUIT HAVING SELECTIVE TEMPERATURE COEFFICIENT - There is provided a current circuit having a selective temperature coefficient. The current circuit may include: a first current generating unit generating a first current having a positive temperature characteristic which increases depending on temperature; a second current generating unit generating a second current having a negative temperature characteristic which decreases depending on temperature; a multiplying unit multiplying and outputting each of the first current and the second current; and a switching unit selectively synthesizing and outputting a plurality of currents outputted from the multiplying unit depending on on/off control signals. Therefore, it is possible to prevent performance from being deteriorated by temperature and easily and efficiently adjust a temperature coefficient through a simple switching logic. | 05-17-2012 |
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| 20080251781 | Nitride semiconductor light emitting device - There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack. | 10-16-2008 |
| 20100019223 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer. | 01-28-2010 |
| 20110121259 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses. | 05-26-2011 |
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| 20080233666 | Light emitting diode package with metal reflective layer and method of manufacturing the same - The invention relates to an LED package having a metal reflective layer for focusing and emitting light through a side of the package, and a manufacturing method of the same. The LED package includes a substrate with an electrode formed thereon, a light emitting diode chip disposed on the substrate, and an encapsulant covering the LED chip and the substrate to protect the LED chip. The LED package also includes a metal reflective layer surrounding side surfaces of the encapsulant to form a light transmitting surface on a top surface of the encapsulant. The invention minimizes light loss, improves luminance, can be mass-produced as a PCB type, and adopts EMC transfer molding to minimize irregular color distribution, thereby improving optical quality. | 09-25-2008 |
| 20080254558 | Side-emitting LED package and method of manufacturing the same - The invention relates to a side-emitting LED package and a manufacturing method thereof. The side-emitting LED package includes a substrate with an electrode formed thereon, and a light source disposed on the substrate and electrically connected to the electrode. The side-emitting LED package also includes a molded part having an upper surface with a center thereof depressed concavely, covering and protecting the substrate and the light source, and a reflection layer covering an entire upper surface of the molded part to reflect light sideward from the molded part which forms a light transmitting surface. The package is not restricted in the shape of the molded part and is not affected by the LED chip size, enabling a compact structure. The invention can also process a substrate by a PCB process, enabling mass-production. | 10-16-2008 |
| 20090155938 | LIGHT EMITTING DIODE PACKAGE WITH DIFFUSER AND METHOD OF MANUFACTURING THE SAME - The invention relates to an LED package for facilitating color mixing using a diffuser and a manufacturing method of the same. The LED package includes a substrate with an electrode formed thereon, and an LED chip mounted on the substrate. The LED package also includes an encapsulant applied around the light emitting diode chip, containing a diffuser. The LED package further includes a lens part disposed on the light emitting diode chip and the encapsulant to radiate light in a wide angle. The LED package allows light from the light emitting diode chip to be emitted out of the package without distortion. The invention allows light to exit through the encapsulant containing the diffuser and the lens part, achieving uniform diffusion and emission of light from the LED chip, thereby increasing a radiating angle and obtaining a uniform light source. | 06-18-2009 |
