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| 20100109086 | Method of Fabricating A Fin Field Effect Transistor (FinFET) Device - A method of fabricating a semiconductor using a fin field effect transistor (FINFET) is disclosed. In a particular embodiment, a method includes depositing, on a silicon substrate, a first dummy structure having a first sidewall and a second sidewall separated by a first width. The method also includes depositing, on the silicon substrate, a second dummy structure concurrently with depositing the first dummy structure. The second dummy structure has a third sidewall and a fourth sidewall that are separated by a second width. The second width is substantially greater than the first width. The first dummy structure is used to form a first pair of fins separated by approximately the first width. The second dummy structure is used to form a second pair of fins separated by approximately the second width. | 05-06-2010 |
| 20100308408 | Apparatus and Method to Fabricate an Electronic Device - An apparatus and method to fabricate an electronic device is disclosed. In a particular embodiment, an apparatus includes a template having an imprint surface. The imprint surface includes a first region having a first pattern adapted to fabricate a fin field effect transistor (FinFET) device and a second region having a second pattern adapted to fabricate a planar electronic device. | 12-09-2010 |
| 20110051535 | Fin-Type Device System and Method - A fin-type device system and method is disclosed. In a particular embodiment, a method of fabricating a transistor is disclosed and includes forming a gate of a transistor within a substrate having a surface and forming a buried oxide (BOX) layer within the substrate and adjacent to the gate at a first BOX layer face. The method also includes forming a raised source-drain channel (“fin”), where at least a portion of the fin extends from the surface of the substrate, and where the fin has a first fin face adjacent a second BOX layer face of the BOX layer. | 03-03-2011 |
| 20110140288 | Systems and Methods Employing a Physically Asymmetric Semiconductor Device Having Symmetrical Electrical Behavior - An integrated circuit device comprising a first elongate structure and a second elongate structure arranged parallel to each other and defining a space therebetween. The integrated circuit device also includes conductive structures distributed in the space between the first and second elongate structures. At least a first one of the conductive structures is placed closer to the first elongate structure than to the second elongate structure. At least a second one of the conductive structures is placed closer to the second elongate structure than to the first elongate structure. | 06-16-2011 |
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| 20090046028 | ANTENNA WITH VOLUME OF MATERIAL - An antenna includes one or more antenna elements and a volume of material contained at least partly within a volume of the one or more antenna elements. The volume of material has at least one electromagnetic property that is different from free space. The volume of material may include dielectric material and/or ferrite material. The antenna elements may be isolated magnetic dipole (IMD) antenna elements. The electromagnetic property may be permeability and/or permittivity. | 02-19-2009 |
| 20090051611 | ANTENNA WITH ACTIVE ELEMENTS - A multi-frequency antenna comprising an IMD element, active tuning elements and parasitic elements. The IMD element is used in combination with the active tuning and parasitic elements for enabling a variable frequency at which the antenna operates, wherein, when excited, the parasitic elements may couple with the IMD element to change an operating characteristic of the IMD element. | 02-26-2009 |
| 20100259456 | MULTI-LAYER REACTIVELY LOADED ISOLATED MAGNETIC DIPOLE ANTENNAA - A multi-layer reactively loaded isolated magnetic (IMD) dipole with improved bandwidth and efficiency characteristics to be used in wireless communications and other applicable systems. The multi-layer IMD antenna comprises a first element positioned above a ground plane, a second element positioned above a ground plane and coupled to the first portion. Reactive components are integrated into one or both elements to optimize the frequency response of the antenna. The range of frequencies covered to be determined by the shape, size, and number of elements in the physical configuration of the components. Portions of or the entire ground plane can be removed beneath the elements. | 10-14-2010 |
| 20110012800 | ANTENNA WITH ACTIVE ELEMENTS - A multi-frequency antenna comprising an IMD element, one or more active tuning elements and one or more parasitic elements. The IMD element is used in combination with the active tuning and parasitic elements for enabling a variable frequency at which the antenna operates, wherein, when excited, the parasitic elements may couple with the IMD element to change an operating characteristic of the IMD element. | 01-20-2011 |
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| 20090203666 | COMPOUNDS AND COMPOSITIONS AS HEDGEHOG PATHWAY MODULATORS - The invention provides a method for modulating the activity of the hedgehog signaling pathway. In particular, the invention provides a method for inhibiting aberrant growth states resulting from phenotypes such as Ptc loss-of-function, hedgehog gain-of-function, smoothened gain-of-function or Gli gain-of-function, comprising contacting a cell with a sufficient amount of a compound of Formula I. | 08-13-2009 |
| 20090306039 | COMPOUNDS AND COMPOSITIONS AS ITPKB INHIBITORS - The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated B cell activities, particularly diseases or disorders that involve aberrant activation of inositol 1,4,5-trisphosphate 3-kinase B (ITPKb). | 12-10-2009 |
| 20090312308 | COMPOUNDS AND COMPOSITIONS AS HEDGEHOG SIGNALING PATHWAY MODULATORS - The invention provides a method for modulating the activity of the hedgehog signaling pathway. In particular, the invention provides a method for inhibiting aberrant growth states resulting from phenotypes such as Ptc loss-of-function, hedgehog gain-of-function, smoothened gain-of-function or Gli gain-of-function, comprising contacting a cell with a sufficient amount of a compound of Formula I. | 12-17-2009 |
| 20100056494 | PURINE COMPOUNDS AND COMPOSITIONS AS KINASE INHIBITORS FOR THE TREATMENT OF PLASMODIUM RELATED DISEASES - The invention provides a class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with kinase activity, particularly malaria. | 03-04-2010 |
| 20110092491 | Compounds and Compositions as Inhibitors of Receptor Tyrosine Kinase Activity - The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with cSRC, Lck, FGFR3, Flt3, TrkB, Bmx, and/or PFGFRα kinase activity. | 04-21-2011 |
| 20110152282 | HEDGEHOG PATHWAY MODULATORS - The invention provides a method, compounds and compositions for modulating the activity of the hedgehog signaling pathway. In particular, the invention provides a method for inhibiting aberrant growth states resulting from phenotypes such as Ptc loss-of-function, hedgehog gain-of-function, smoothened gain-of-function or GIi gain-of-function, comprising contacting a cell with a sufficient amount of a compound of Formula (I). | 06-23-2011 |
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| 20080200491 | 1,2-Dihydro-Spiro[3H-Indole-3,4'-Piperidine] Compounds, as Modulators of the Mas Receptor Novel - The present invention relates to certain 1,2-dihydro-spiro[3H-indole-3,4′-piperidine]compounds of Formula (Ia): and pharmaceutically acceptable salts, solvates and hydrates thereof, wherein G, R1, R2, R3, R4, R5, and Ar are as disclosed herein (“Compound(s) of the Invention”), which are useful, for example, as cardio-protective and/or neuro-protective agents. The invention also provides pharmaceutical compositions comprising a Compound of the Invention and methods for treating, preventing and/or managing a vascular, cardiovascular or neurological disease or disorder, comprising administering to a patient in need thereof a Compound of the Invention. | 08-21-2008 |
| 20090197935 | PRIMARY AMINES AND DERIVATIVES THEREOF AS MODULATORS OF THE 5-HT2A SEROTONIN RECEPTOR USEFUL FOR THE TREATMENT OF DISORDERS RELATED THERETO - The present invention pertains to certain compounds of Formula (Ia) and pharmaceutical compositions thereof that modulate the activity of the 5-HT | 08-06-2009 |
| 20110130409 | SUBSTITUTED 1,2,3,4-TETRAHYDROCYCLOPENTA[B]INDOL-3-YL)ACETIC ACID DERIVATIVES USEFUL IN THE TREATMENT OF AUTOIMMUNE AND INFLAMMATORY DISORDERS - The present invention relates to certain substituted 1,2,3,4-tetrahydrocyclopenta[b]indol-3-yl)acetic acid derivatives of Formula (Ia) and pharmaceutically acceptable salts thereof, which exhibit useful pharmacological properties, for example, as agonists of the S1P1 receptor. Also provided by the present invention are pharmaceutical compositions containing compounds of the invention, and methods of using the compounds and compositions of the invention in the treatment of S1P1 receptor-associated disorders, for example, psoriasis, rheumatoid arthritis, Crohn's disease, transplant rejection, multiple sclerosis, systemic lupus erythematosus, ulcerative colitis, type I diabetes, acne, microbial infections or diseases and viral infections or diseases. | 06-02-2011 |
