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Han-Chung
Han-Chung Chen, Tai Chung County TW
| Patent application number | Description | Published |
|---|---|---|
| 20110293870 | COMPOSITE COVER SHEET AND COVER SHEET ASSEMBLY - A composite cover sheet includes a first protective film, a first adhesive layer, a second protective film and a second adhesive layer. The first protective film has a first sticking part and a first movable part. The first protective film is attached to a base sheet through the first adhesive layer, and the first protective film is removed from the base sheet through the first movable part. The second protective film has a second sticking part and a second movable part, and the second protective film and the first protective film are separately formed. The second protective film is attached to the first protective film through the second adhesive layer, and the second protective film is removed from the first protective film through the second movable part. | 12-01-2011 |
Han-Chung Chen, Taichung County TW
| Patent application number | Description | Published |
|---|---|---|
| 20110292625 | BONDING PAD STRUCTURE - A bonding pad structure is disclosed, which is composed of two bonding pad units that are symmetrically disposed with respect to an axial line. Each bonding pad units is further composed of at least two bonding pads, i.e. each bonding pad unit is composed of at least one first bonding pad and at least one second bonding pad. In an embodiment, the first bonding pad is arranged next to the axial line and the second bonding pad is arranged at a side of the corresponding first bonding pad away from the axial line while enabling the first bonding pad and the corresponding second bonding pad to be interconnected to each other by a first neck portion. Thereby, a plurality of solder areas of different sizes can be formed by the interconnecting of the at least two bonding pad units that can be used for soldering electronic components of different sizes. | 12-01-2011 |
Han-Chung Chiang, Banqiao City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090113103 | CASCADE TYPE CHARGE ASSEMBLY - A cascade type charge assembly is provided. The cascade type charge assembly is shaped in an expansion card and can be detached according to different purposes. The cascade type charge assembly comprises at least a first adapter, a second adapter, a third adapter, and a cover. A first type universal serial bus (USB) connecting line is disposed on one side of the first adapter for electrically connecting to a computer, and a second type USB connector is disposed on the other side of the first adapter. The second adapter has a side to be cascaded with the second type USB connector, and at least one cylindrical male plug is disposed on the other of the second adapter. The third adapter has a side to be cascaded with the at least one cylindrical male plug, and an electrical connector disposed on the other side of the third adapter, which can be accommodated within the cover. | 04-30-2009 |
| 20090196050 | LIGHTING FIXTURE WITH MODULARIZED LAMPSHADE - A lighting fixture with a modularized lampshade comprises a lamp holder connected to the modularized lampshade and a lighting device disposed inside the modularized lampshade. The modularized lampshade is pieced together by several pieces of basic elements each having at least one kind of geometric polygonal shapes. The present invention provides several kinds of basic elements serving as piling bricks to constitute various shapes of lighting fixture according to creativity of users. Due to specific shapes of the basic elements, the overlapping parts of the basic elements can produce alternate light and shading patterns and/or totems shown on the modularized lampshade, the lighting fixture with the modularized lampshade of the present invention gets more aesthetic. | 08-06-2009 |
Han-Chung Ho, Chung-Ho City TW
| Patent application number | Description | Published |
|---|---|---|
| 20080298924 | Riveting structure - A riveting structure is provided, which includes a rivet and a riveted member. A riveting portion is formed at one end of the rivet, and the riveted member has a blind hole formed thereon for accommodating the riveting portion of the rivet. A deformable pressing portion is formed by extending from the edge of the blind hole, for covering and pressing the riveting portion, so as to securely fix the rivet onto the riveted member | 12-04-2008 |
Han-Chung Lin, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20120098063 | DUMMY GATE FOR A HIGH VOLTAGE TRANSISTOR DEVICE - The present disclosure provides a semiconductor device. The semiconductor device includes a first doped region and a second doped region both formed in a substrate. The first and second doped regions are oppositely doped. The semiconductor device includes a first gate formed over the substrate. The first gate overlies a portion of the first doped region and a portion of the second doped region. The semiconductor device includes a second gate formed over the substrate. The second gate overlies a different portion of the second doped region. The semiconductor device includes a first voltage source that provides a first voltage to the second gate. The semiconductor device includes a second voltage source that provides a second voltage to the second doped region. The first and second voltages are different from each other. | 04-26-2012 |
Han-Chung Tai, Kaohsiung City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100038677 | Semiconductor device for electrostatic discharge protection - A semiconductor device for electrostatic discharge protection is disclosed, and at least comprises a high-voltage parasite silicon controlled rectifier (HVSCR) and a diode. The HVSCR has an anode and a cathode, and the cathode of HVSCR is coupled to a ground. The diode, coupled to the HVSCR in series, also has an anode and a cathode. The anode of the diode is coupled to the anode of the HVSCR, and the cathode of the diode is coupled to a terminal applied with a positive voltage. The diode has a second conductivity type zone that could be constructed to form several strips or small blocks spaced apart from each other. Those small blocks could be any shapes and arranged regularly or randomly. | 02-18-2010 |
| 20100230749 | SEMICONDUCTOR DEVICES AND FORMATION METHODS THEREOF - A semiconductor device is provided and includes a substrate of a first conductivity type, a deep well of a second conductivity type, and a first high-side device. The deep well is formed on the substrate. The first high-side device is disposed within the deep well and includes an insulation layer of the second conductivity type, a well of the first conductivity type, first and second regions of the second conductivity type, and a first poly-silicon material. The insulation layer is formed on the substrate. The well is formed within the deep well. The first and second regions are formed within the well. The first poly-silicon material is disposed between the first region and the second region and on the deep well. | 09-16-2010 |
| 20110180858 | Semiconductor Device - A semiconductor device. The semiconductor comprises a substrate, a VDMOS, a JFET, a first electrode, a second electrode, a third electrode and a fourth electrode. The VDMOS is formed in the substrate. The JFET is formed in the substrate. Wherein the first electrode, the second electrode and a third electrode are connected to the VDMOS and used as a first gate electrode, a first drain electrode and a first source electrode of the VDMOS respectively. The second electrode, the third electrode and the fourth electrode are connected to the JFET and used as a second drain electrode, a second gate electrode and a second drain electrode of the JFET respectively. | 07-28-2011 |
| 20110180878 | High Side Semiconductor Structure - A high side semiconductor structure is provided. The high side semiconductor structure includes a substrate, a first deep well, a second deep well, a first active element, a second active element and a doped well. The first deep well and the second deep well are formed in the substrate, wherein the first deep well and the second deep well have identical type of ion doping. The first active element and the second active element are respectively formed in the first deep well and the second deep well. The doped well is formed in the substrate and is disposed between the first deep well and the second deep well. The doped well, the first deep well and the second deep well are interspaced, and the type of ion doping of the first deep well and the second deep well is complementary with that of the doped well. | 07-28-2011 |
| 20110260291 | Semiconductor Structure - A semiconductor structure. The semiconductor comprises a substrate, a first deep well, a diode and a transistor. The first deep well is formed in the substrate. The diode is formed in the first deep well. The transistor is formed in the first deep well. The diode is connected to a first voltage, the transistor is connected to a second voltage, and the diode and the transistor are cascaded. | 10-27-2011 |
Han-Chung Tsai, Darien, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20100033323 | RADIO FREQUENCY IDENTIFICATION (RFID) SURVEILLANCE TAG - An enhanced method and apparatus are provided for tracking and managing a plurality of packagings, particularly packagings containing radioactive and fissile materials. A radio frequency identification (RFID) surveillance tag is provided with an associated packaging. The RFID surveillance tag includes a tag body and a back plate including predefined mounting features for mounting the surveillance tag to the associated packaging. The RFID surveillance tag includes a battery power supply. The RFID surveillance tag includes a plurality of sensors monitoring the associated packaging including a seal sensor. The seal sensor includes a force sensitive material providing a resistivity change responsive to change in a seal integrity change of the associated packaging. The resistivity change causes a seal integrity tag alarm. A tag memory stores data responsive to tag alarms generated by each of the plurality of sensors monitoring the associated packaging. | 02-11-2010 |
Han-Chung Wu, Taipei TW
| Patent application number | Description | Published |
|---|---|---|
| 20090136418 | Peptides specific for hepatocellular carcinoma cells and applications thereof - Hepatocellular carcinoma (HCC) is the fourth leading cause of cancer death worldwide. Novel treatment strategies derived from increased knowledge of molecular oncology are constantly being developed to cure this disease. Here, we used phage display to identify novel peptides, including (SP94), which binds specifically to HCC cells. In vitro, the phage clone PC94 binds to HCC cell lines. In vivo, PC94 homed specifically to tumor tissues but not to normal visceral organs in SCID mice bearing human HCC xenografts. The homing ability could be competitively inhibited by synthetic peptide, SP94. PC94 localized to tumor tissues but could not be detected in SP94-competed tumor tissues or in normal organs. In addition, PC94 recognized the tumor tissue but not non-tumor tissue in surgical specimens from HCC patients, with a positive rate of 61.3% (19/31). With the conjugation of SP94 and liposomal doxorubicin, a targeted drug delivery system enhanced the therapeutic efficacy against HCC xenografts through enhanced tumor apoptosis and decreased tumor angiogenesis. Our results indicate that SP94 can improve the systemic treatment of patients with advanced HCC. | 05-28-2009 |
Han-Chung Wu, Taipei City TW
| Patent application number | Description | Published |
|---|---|---|
| 20080220409 | Antigen of Dengue Virus Type 1 - Antigens and B-cell epitopes derived from dengue virus type 1 are provided. The antigens are specifically immunoreactive with sera from individuals infected with dengue virus type 1 but not reactive with sera from healthy individuals and individuals infected with dengue virus type 2. The antigens and epitopes are useful for development of diagnostic kits and reagents, and are useful tools as well in determining whether an individual is infected with dengue virus type 1, and for distinguishing infection from dengue virus type 2. | 09-11-2008 |
| 20090054363 | Genetic markers and methods for detecting and treating cancers - The present invention provides genetic markers, SOX5 and SPARC, for distant metastasis and poor prognosis of detection of the high risk potential for cancer patients. In addition, the present invention also provides a method to predict the risk potential for cancer patients with distant metastasis and poor prognosis. This method comprises obtaining a tissue sample from a patient, evaluating the expression levels of the SOX5 and/or SPARC genetic markers in the sample; and comparing the expression levels of genetic markers with those of non-cancerous tissues. The patient is determined to have the high risk of distant metastasis or poor prognosis when the expression level of SOX5 is higher, or when the expression level of SPARC is lower, than that of non-cancerous tissue. Furthermore, the identified genetic marker SOX5 and/or SPARC can also be used for cancer targeted therapy, because down regulation of SOX5 and/or up regulation of SPARC expression in NOD-SCID can retard tumor growth and inhibit cell proliferation, migration, invasion and metastasis. | 02-26-2009 |
| 20100119444 | Tumor-Targeting Peptides and Uses Thereof - Tumor targeting peptides and uses thereof in tumor diagnosis and treatment. | 05-13-2010 |
| 20110275105 | Methods of inducing pluripotency - Methods are provided for inducing non-pluripotent cells to become pluripotent. Methods also include identifying and isolating induced pluripotent (iPS) cells and uses thereof. Compositions and kits for carrying out the subject methods are also provided. | 11-10-2011 |
| 20120014945 | Anti-Dengue Virus Antibodies - Provided herein are monoclonal antibodies specific to dengue virus as well as their antigen-binding fragments, and functional variants. Also disclosed are uses thereof for treating or diagnosing dengue virus infection. | 01-19-2012 |
| 20120039988 | CANCER-TARGETING PEPTIDES AND USES THEREOF IN CANCER THERAPY - Cancer-targeting peptides and uses thereof in cancer therapy. | 02-16-2012 |
| 20120093721 | USES OF CANCER-TARGETING PEPTIDES IN CANCER DIAGNOSIS - Cancer-targeting peptides and uses thereof in cancer diagnosis. | 04-19-2012 |