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Hampp
Andreas Hampp, Santa Barbara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100101840 | APPLICATION OF A SELF-ASSEMBLED MONOLAYER AS AN OXIDE INHIBITOR - An embodiment is directed to a method of forming a self assembled monolayer to reduce formation of an oxide. The method includes applying an inhibitor to a substrate including conductive contacts and processing the substrate and inhibitor to form the self assembled monolayer. | 04-29-2010 |
| 20100177371 | Organic Layers for Tunable Optical Devices - A method for manipulating light comprises receiving an incoming beam of light at a tunable optical device, the tunable optical device comprising an organic material having an optical property that can be selectively varied under the influence of an external bias. The method further comprises applying a selected external bias to the tunable optical device to change an optical property of the tunable optical device. The method also comprises controlling an optical property of a beam of light exiting the tunable optical device as a result of the selected external bias. | 07-15-2010 |
| 20110042772 | Composite Semiconductor Structure Formed Using Atomic Bonding and Adapted to Alter the Rate of Thermal Expansion of a Substrate - In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure. | 02-24-2011 |
| 20110164303 | Polymer Shutter Compositions and Devices for Infrared Systems - The present disclosure relates, according to some embodiments, to compositions and devices operable for infra-red transmission and blocking comprising a layered structure having a first electrically conducting layer, a conjugated electrochromic polymer layer, an electrolyte layer and a second electrically conducting layer, wherein the first and second electrically conducting layers have an infrared transparency and the conjugated electrochromic polymers may be operable to be electrically switched between a transparent state that transmits infrared light to an opaque state that does not transmit infrared light. In some embodiments, a device of the disclosure may also have one or more outer substrates sandwiching the other layers. Some embodiments relate to single-layered devices. Some embodiments relate to combined layers. Compositions and devices of the disclosure may be integrated into a wide variety of infrared systems for transmission, shuttering and calibration applications. | 07-07-2011 |
Norbert Hampp, Amoeneburg-Rossdorf DE
| Patent application number | Description | Published |
|---|---|---|
| 20100097915 | OPTICAL DATA STORE AND METHOD FOR STORAGE OF DATA IN AN OPTICAL DATA STORE - An optical data store is specified, having a data storage layer with a non-toxic and biodegradable polymer as light-sensitive storage medium which has photo-inducible anisotropy, for the induction of which a threshold value of the optical intensity has to be exceeded. The light-sensitive material is preferably bacteriorhodopsin which, by way of example, is immobilized in a manner embedded in a suitable matrix material or, if appropriate, in a crosslinked manner. The storage medium permits a high storage density and can be applied in a simple manner, for instance by printing onto a substrate. | 04-22-2010 |
Norbert Hampp, Amöneburg DE
| Patent application number | Description | Published |
|---|---|---|
| 20090133196 | Protective Material Comprising Reversible and Irreversible Photochemical Functional Constituents - The invention relates to a security material comprising a carrier and at least one photochromic Protein and/or a mutein of a photochromic protein. The security material is characterised in that it comprises at least one irreversible photosensitive layer on the carrier, and the at least one photochromic protein and/or mutein is contained at least in the at least one photosensitive layer and/or in an optional additional layer. The inventive security material is also characterised in that it is highly forgery-proof, the photochromic biomolecule cannot be removed therefrom in a usable form, and the photochromic biomolecule does not need to be supplied to a large group of clients. | 05-28-2009 |
| 20090157178 | INTRAOCULAR LENS - The invention relates to an artificial intraocular lens consisting of a polymer material which permits a change of the optical properties of the artificial intraocular lens when exposed to light. This enables the lens to be exactly adjusted to the required visual acuity upon implantation thereof. | 06-18-2009 |
Norbert Hampp, Amöneburg DE
| Patent application number | Description | Published |
|---|---|---|
| 20090157178 | INTRAOCULAR LENS - The invention relates to an artificial intraocular lens consisting of a polymer material which permits a change of the optical properties of the artificial intraocular lens when exposed to light. This enables the lens to be exactly adjusted to the required visual acuity upon implantation thereof. | 06-18-2009 |
Roland Hampp, Bad Abbach DE
| Patent application number | Description | Published |
|---|---|---|
| 20100148262 | Resistors and Methods of Manufacture Thereof - Resistors, semiconductor devices, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a resistor includes forming a semiconductive material over a workpiece, and patterning at least the semiconductive material, forming a gate of a transistor in a first region of the workpiece and forming a resistor in a second region of the workpiece. At least one substance is implanted into the semiconductive material of the gate of the transistor or the resistor so that the semiconductive material is different for the gate of the transistor and the resistor. | 06-17-2010 |
| 20100308418 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a gate dielectric and a cap layer disposed over the gate dielectric. The first transistor includes a gate including a metal layer disposed over the cap layer and a semiconductive material disposed over the metal layer. The semiconductor device includes a second transistor in a second region of the workpiece, which includes the gate dielectric and the cap layer disposed over the gate dielectric. The second transistor includes a gate that includes the metal layer disposed over the cap layer and the semiconductive material disposed over the metal layer. A thickness of the metal layer, a thickness of the semiconductive material, an implantation region of a channel region, or a doped region of the gate dielectric of the first transistor achieves a predetermined threshold voltage for the first transistor. | 12-09-2010 |