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Hampel, CA

Craig Hampel, Los Altos, CA US

Patent application numberDescriptionPublished
20090198924Memory System Topologies Including A Buffer Device And An Integrated Circuit Memory Device - Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.08-06-2009
20100115191System Including Hierarchical Memory Modules Having Different Types Of Integrated Circuit Memory Devices - A memory system is disclosed comprising a memory controller and a first set of volatile memory devices defining a first memory hierarchy. The first set of volatile memory devices are disposed on at least one first memory module, which is coupled to the memory controller in a daisy-chained configuration. A first integrated circuit buffer device is included on the module. The system has a second set of nonvolatile memory devices defining a second memory hierarchy. The second set of nonvolatile memory devices are disposed on at least one second memory module, which is coupled to the at least one first memory module in a daisy-chained configuration. The second module includes a second integrated circuit buffer device. The system is configured such that signals transmitted between the memory controller and the second memory hierarchy pass through the first memory hierarchy.05-06-2010
20100146199Memory System Topologies Including A Buffer Device And An Integrated Circuit Memory Device - Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.06-10-2010
20110228614Memory System Topologies Including A Buffer Device And An Integrated Circuit Memory Device - Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.09-22-2011

Patent applications by Craig Hampel, Los Altos, CA US

Craig E. Hampel, Los Altos, CA US

Patent application numberDescriptionPublished
20090157994MEMORY MODULE WITH REDUCED ACCESS GRANULARITY - A memory module having reduced access granularity. The memory module includes a substrate having signal lines thereon that form a control path and first and second data paths, and further includes first and second memory devices coupled in common to the control path and coupled respectively to the first and second data paths. The first and second memory devices include control circuitry to receive respective first and second memory access commands via the control path and to effect concurrent data transfer on the first and second data paths in response to the first and second memory access commands.06-18-2009
20090164677TIMING ADJUSTMENT IN A RECONFIGURABLE SYSTEM - This disclosure provides a method for adjusting system timing in a reconfigurable memory system. In a Dynamic Point-to-Point (“DPP”) system, for example, manufacturer-supplied system timing parameters such as access latency and maximum clock speed typically reflect a worst-case configuration scenario. By in-situ detecting actual configuration (e.g., whether expansion boards have been inserted), and correspondingly configuring the system to operate in a mode geared to the specific configuration, worst-case or near worst-case scenarios may be ruled out and system timing parameters may be redefined for faster-than-conventionally-rated performance; this is especially the case in a DPP system where signal pathways typically become more direct as additional modules are added. Contrary to convention wisdom therefore, which might dictate that component expansion should slow down timing, clock speed can actually be increased in such a system, if supported by the configuration, for better performance.06-25-2009
20090235113MEMORY ERROR DETECTION - Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation09-17-2009
20100142292LOW POWER MEMORY DEVICE - A method of operation within a memory device is disclosed. The method comprises receiving address information and corresponding enable information in association with a memory access request. The address information includes a row address that specifies a row of storage cells within a storage array of the memory device, and the enable information includes first and second enable values that correspond respectively to first and second storage locations within the row of storage cells. The method involves selectively transferring data between the first and second storage locations and sense amplifier circuitry according to states of the first and second enable values. This includes transferring data between the first storage location and the sense amplifier circuitry if the first enable value is in an enable state and transferring data between the second storage location and the sense amplifier circuitry if the second enable value is in the enable state. The states of the first and second enable values may be separately controlled.06-10-2010
20100223426Variable-width memory - Described is a memory system in which the memory core organization changes with device width. The number of physical memory banks accessed reduces with device width, resulting in reduced power usage for relatively narrow memory configurations. Increasing the number of logic memory banks for narrow memory widths reduces the likelihood of bank conflicts, and consequently improves speed performance.09-02-2010
20110016278Independent Threading of Memory Devices Disposed on Memory Modules - A memory module includes a substrate having signal lines thereon that form a control path and a plurality of data paths. A plurality of memory devices are mounted on the substrate. Each memory device is coupled to the control path and to a distinct data path. The memory module includes control circuitry to enable each memory device to process a distinct respective memory access command in a succession of memory access commands and to output data on the distinct data path in response to the processed memory access command.01-20-2011
20110289510ATOMIC-OPERATION COALESCING TECHNIQUE IN MULTI-CHIP SYSTEMS - A cache-coherence protocol distributes atomic operations among multiple processors (or processor cores) that share a memory space. When an atomic operation that includes an instruction to modify data stored in the shared memory space is directed to a first processor that does not have control over the address(es) associated with the data, the first processor sends a request, including the instruction to modify the data, to a second processor. Then, the second processor, which already has control of the address(es), modifies the data. Moreover, the first processor can immediately proceed to another instruction rather than waiting for the address(es) to become available.11-24-2011
20120063524SIGNALING SYSTEM WITH ADAPTIVE TIMING CALIBRATION - A signaling system is disclosed. The signaling system includes a first integrated circuit (IC) chip to receive a data signal and a strobe signal. The first IC includes circuitry to sample the data signal at times indicated by the strobe signal to generate phase error information and circuitry to output the phase error information from the first IC device. The system further includes a signaling link and a second IC chip coupled to the first IC chip via the signaling link to output the data signal and the strobe signal to the first IC chip. The second IC chip includes delay circuitry to generate the strobe signal by delaying an aperiodic timing signal for a first time interval and timing control circuitry to receive the phase error information from the first IC chip and adjust the first time interval in accordance with the phase error information.03-15-2012
20120117338METHOD AND SYSTEM FOR SYNCHRONIZING ADDRESS AND CONTROL SIGNALS IN THREADED MEMORY MODULES - A memory system includes a memory module which further includes a set of memory devices. The set of memory devices includes a first subset of memory devices and a second subset of memory devices. An address bus is disposed on the memory module, wherein the address bus includes a first segment coupled to the first subset and a second segment coupled to the second subset. An address signal traverses the set of memory devices in sequence. The memory system also includes a memory controller which is coupled to the memory module. The memory controller includes a first circuit to output a first control signal that controls the first subset, such that the first control signal and the address signal arrive at a memory device in the first subset at substantially the same time. The memory controller additionally includes a second circuit to output a second control signal that controls the second subset, such that the second control signal and the address signal arrive at a memory device in the second subset at substantially the same time.05-10-2012
20120134084Memory Modules and Devices Supporting Configurable Core Organizations - Described are memory apparatus organized in memory subsections and including configurable routing to support multiple data-width configurations. Relatively narrow width configurations load fewer sense amplifiers, resulting in reduced power usage for relatively narrow memory configurations. Also described are memory controllers that convey width selection information to configurable memory apparatus and support point-to-point data interfaces for multiple width configurations.05-31-2012
20120159061Memory Module With Reduced Access Granularity - A memory module having reduced access granularity. The memory module includes a substrate having signal lines thereon that form a control path and first and second data paths, and further includes first and second memory devices coupled in common to the control path and coupled respectively to the first and second data paths. The first and second memory devices include control circuitry to receive respective first and second memory access commands via the control path and to effect concurrent data transfer on the first and second data paths in response to the first and second memory access commands.06-21-2012

Patent applications by Craig E. Hampel, Los Altos, CA US

Craig Edward Hampel, San Jose, CA US

Patent application numberDescriptionPublished
20120201089INTEGRATED CIRCUIT DEVICE COMPRISES AN INTERFACE TO TRANSMIT A FIRST CODE, A STROBE SIGNAL AFTER A DELAY AND DATA TO A DYNAMIC RANDOM ACCESS MEMORY (DRAM) - An integrated circuit device comprises an interface to transmit a first code, a strobe signal after a delay and data to a dynamic random access memory (DRAM). The first code indicates that data is to be written to the DRAM. The first code is registered by the DRAM on one or more edges of an external clock signal received by the DRAM. The strobe signal specifies one or more discrete points in time synchronous with the external clock signal at which the data is registered by the DRAM.08-09-2012