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Hamerski
Andre Hamerski, Nova Prata BR
| Patent application number | Description | Published |
|---|---|---|
| 20090183812 | UNIVERSAL BODY-SUPPORT FOR PNEUMATIC TREAD - A universal body-support for pneumatic tread is presented as a finished part for tailored application of any type of tread in which usual frame if formed by talons wings and flat area presenting bearing area and not having tread and tread having base layer coated by an elastomeric layer, compatible to the elastomeric layer, having self-adhesive characteristics and is protected against oxidation and contaminants by a film made of removable plastic material or by braided thread layer. | 07-23-2009 |
| 20090203278 | SEPARATE TOROIDAL BODY SUPPORT FOR PNEUMATIC COVERINGS - A toroidal body support is provided for pneumatic coverings, having rims, side walls and flat zone as a base for tread. The body is finished, without tread and includes a peripheral flat zone covered by a removable woven yarn layer, with a width that is wider than that of the flat zone to form side edges to assist removal. | 08-13-2009 |
Roman J. Hamerski, Overland Park, KS US
| Patent application number | Description | Published |
|---|---|---|
| 20080217721 | HIGH EFFICIENCY RECTIFIER - A high-efficiency power semiconductor rectifier device ( | 09-11-2008 |
Roman Jan Hamerski, Overland Park, KS US
| Patent application number | Description | Published |
|---|---|---|
| 20090039384 | POWER RECTIFIERS AND METHOD OF MAKING SAME - In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode. | 02-12-2009 |