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Hamaya
Kohei Hamaya, Fukuoka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120133007 | MAGNETIZATION REVERSAL DEVICE, MEMORY ELEMENT, AND MAGNETIC FIELD GENERATION DEVICE - A magnetization reversal device includes a ferromagnetic | 05-31-2012 |
Masahito Hamaya, Nagoya JP
| Patent application number | Description | Published |
|---|---|---|
| 20100080592 | IMAGE FORMING DEVICE - An image forming device includes plural electrostatic latent image holding bodies that hold, on surfaces thereof, electrostatic latent images to be developed with developers of multiple colors, respectively, plural electrification control units that face the electrostatic latent image holding bodies and charge or discharge the surfaces of the electrostatic latent image holding bodies, respectively, a current controller that controls electric currents, each of which is supplied between the electrostatic latent image holding body and the electrification control unit for a corresponding one of the multiple colors, to be a constant target current, a maximum voltage output unit that outputs a maximum voltage among voltages each of which is applied between the electrostatic latent image holding body and the electrification control unit for a corresponding one of the multiple colors, and a detector that detects malfunction of the electrification control units when the maximum voltage exceeds a predetermined value. | 04-01-2010 |
Noriaki Hamaya, Echizen-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080241475 | GRAPHITE-SILICON CARBIDE COMPOSITE AND MAKING METHOD - A graphite-silicon carbide composite comprises a graphite substrate and a silicon carbide layer formed thereon and comprising silicon carbide particles in fused and contact bonded state. The composite has excellent oxidation resistance and finds a wide range of application as heat resistant material. The method of forming a silicon carbide layer on graphite surface is simple and consistent. | 10-02-2008 |
| 20100112231 | GRAPHITE-SILICON CARBIDE COMPOSITE AND MAKING METHOD - A graphite-silicon carbide composite comprises a graphite substrate and a silicon carbide layer formed thereon and comprising silicon carbide particles in fused and contact bonded state. The composite has excellent oxidation resistance and finds a wide range of application as heat resistant material. The method of forming a silicon carbide layer on graphite surface is simple and consistent. | 05-06-2010 |
Noriaki Hamaya, Takefu-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090196996 | COATED MEMBER AND METHOD OF MANUFACTURE - By thermal spraying, a coating having an embossed or slit pattern is formed on a substrate to construct a coated member. When the coated member is used for sintering compacts, the embossed or slit pattern on the surface helps prevent the compacts from sticking to the coated member during sintering, discourages coating separation due to thermal cycling, and provides the coated member with excellent durability. Such coated members can be effectively used for sintering or heat treating ceramics and powder metallurgy metals, particularly cermets and cemented carbides, in a vacuum, oxidizing atmosphere, inert atmosphere or reducing atmosphere. | 08-06-2009 |
Tadao Hamaya, Bunkyo--Ku JP
| Patent application number | Description | Published |
|---|---|---|
| 20110098358 | HUMAN BETA3 ADRENERGIC RECEPTOR LIGAND, AND FOOD OR PHARMACEUTICAL PRODUCT CONTAINING THE SAME - A human adrenergic β | 04-28-2011 |
Takashi Hamaya, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110127158 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a copper damascene wiring process, a tantalum-based laminated film, which is used as a barrier metal film, is continuously formed in a sputtering deposition chamber. When the continuous deposition process is discontinuously applied to a number of wafers, a tantalum film and a tantalum nitride film which are relatively thin are alternately deposited over an inner surface of a shield in a sputter deposition chamber, which results in a thickness of the deposited film being on the order of several thousand nanometers. The deposited film peels off due to internal stress therein to generate foreign material or particles. To counteract this, a tantalum film, which is much thicker than the tantalum film formed over the wafer at one time, is formed over the substantially inner wall of the chamber at predetermined intervals when repeatedly depositing the tantalum nitride film and the tantalum film in the sputtering deposition chamber. | 06-02-2011 |
Zenichi Hamaya, Utsunomiya-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100068659 | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An exposure apparatus of the present invention is an EUV exposure apparatus | 03-18-2010 |