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Hamamoto
Akitoshi Hamamoto, Bowling Green, KY US
| Patent application number | Description | Published |
|---|---|---|
| 20110101630 | BEND SHAPE FOR ANTI-ROLL BAR - A method of reducing peak stress and distributing stress experienced in bends of anti-roll bars that involves configuring the shape of the bends so that they do not have uniform radii of curvature. Generally the shapes of the bends have greater radii of curvature at central portions than other portions of the bends. Also the shapes of the bends may be symmetrical or non-symmetrical. According to one embodiment the shapes of the bends include a combination of curved and straight portions. | 05-05-2011 |
Katsunobu Hamamoto, Neyagawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120019166 | POWER SOURCE UNIT FOR LED LAMPS, AND LED LAMP SYSTEM - A dedicated power source for LED lamps capable of reliably detecting attachment of an LED lamp is provided. | 01-26-2012 |
Kuzuhiro Hamamoto, Delmar, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080237859 | DIFFUSION BARRIER FOR INTEGRATED CIRCUITS FORMED FROM A LAYER OF REACTIVE METAL AND METHOD OF FABRICATION - An interconnect structure for an integrated circuit and method of forming the interconnect structure. The method includes depositing a metallic layer containing a reactive metal in an interconnect opening formed within a dielectric material containing a dielectric reactant element, thermally reacting at least a portion of the metallic layer with at least a portion of the dielectric material to form a diffusion barrier primarily containing a compound of the reactive metal from the metallic layer and the dielectric reactant element from the dielectric material, and filling the interconnect opening with Cu metal, where the diffusion barrier surrounds the Cu metal within the opening. The reactive metal can be Co, Ru, Mo, W, or Ir, or a combination thereof. The interconnect opening can be a trench, a via, or a dual damascene opening. | 10-02-2008 |
Makoto Hamamoto, Oita-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120073405 | DRY PROCESSING METHOD AND SYSTEM FOR CONVERTER SLAG IN COPPER SMELTING - The present invention provides a processing method for converting slag ejected from a converter in a copper smelting process to raw materials for iron manufacture. The processing method is for converter slag containing 1 mass % or more of Cu produced in a copper smelting process. The processing method comprises a step of charging the converter slag in a reduction furnace, and a step of conducting a heat reduction of a zinc content and a copper content contained in the slag and removing a reduced zinc by volatilization in the reduction furnace. The removal of the reduced zinc by volatilization is conducted in a condition in which an air fuel ratio of a volume of air blowing to an input of a reductant is controlled to 0.25 to 1.0. | 03-29-2012 |
Mitchell M. Hamamoto, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090236690 | WIRE BOND AND REDISTRIBUTION LAYER PROCESS - A semiconductor device comprises a copper redistribution line, a copper inductor and aluminum wire bond pads and the integration of the resulting device with an integrated circuit on a single chip, resulting in the decreased size of the chip. | 09-24-2009 |
| 20110204495 | DEVICE HAVING WIRE BOND AND REDISTRIBUTION LAYER - A semiconductor device comprises a copper redistribution line, a copper inductor and aluminum wire bond pads and the integration of the resulting device with an integrated circuit on a single chip, resulting in the decreased size of the chip. | 08-25-2011 |
Sae Hamamoto, Kakogawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110287280 | HIGH-STRENGTH COLD-ROLLED STEEL SHEET EXCELLENT IN BENDING WORKABILITY - A cold-rolled steel sheet has a chemical composition of C: 0.12% to 0.3%, Si: 0.5% or less, Mn: less than 1.5%, Al: 0.15% or less, N: 0.01% or less, P: 0.02% or less, and S: 0.01% or less, with the remainder including iron and inevitable impurities and has a martensite single-phase structure as its steel microstructure. In a surface region of the steel sheet from the surface to a depth one-tenth the gauge, the number density of n-ary groups of inclusions determined by specific n-th determinations is 120 or less per 100 cm | 11-24-2011 |
Yoshihira Hamamoto, Annaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110269918 | HIGH ADHESIVENESS SILICONE RESIN COMPOSITION AND AN OPTICAL SEMICONDUCTOR DEVICE PROVIDED WITH A CURED PRODUCT THEREOF - The object of the present invention is to provide a silicone resin composition for encapsulating an optical semiconductor element which has strong adhesiveness to a substrate and provide an optical semiconductor element which has high reliability. The present invention provides a silicone resin composition comprising an organopolysiloxane (A) having at least two alkenyl groups per molecule, a liner organohydrogenpolysiloxane (B-1) which has hydrogen atoms each bonded to a silicon atom at the both terminals and a liner organohydrogenpolysiloxane (B-2) which has a hydrogen atom bonded to a silicon atom at one terminal and a hydroxyl or alkoxy group bonded to a silicon atom at the other terminal, a branched organohydrogenpolysiloxane (C) having at least three hydrosilyl groups per molecule, a catalytic (D), and a condensation catalyst (E). The present invention also provides an optical semiconductor device provided with a cured product thereof. | 11-03-2011 |
| 20110309407 | CYCLOALKYL GROUP-CONTAINING SILICONE RESIN COMPOSITION AND A METHOD OF USING THE SAME - One object of the present invention is to provide a silicone resin composition having remarkably low gas permeability which is useful for a purpose requiring lower gas permeability. Further, another object of the present invention is to provide an optical semiconductor device provided with a cured product obtained by curing the silicone resin composition which has discoloration resistance, durable reflection efficiency and high reliability. The present invention provides a silicone resin composition comprising (A) an organopolysiloxane having at least two alkenyl groups per molecule, and is represented by the average compositional formula (1), (B) an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to a silicon atom, and is represented by the average compositional formula (2), (C) a catalytic amount of a curing catalyst, and (D) 0.001 to 3 parts by mass of an antioxidant, relative to a total 100 parts by mass of components (A) and (B). | 12-22-2011 |
| 20120056236 | LOW GAS PERMEABLE SILICONE RESIN COMPOSITION AND OPTOELECTRONIC DEVICE - A silicone resin composition comprising (A) an organopolysiloxane containing silicon-bonded aryl and alkenyl groups in a molecule, (B) an organohydrogenpolysiloxane, and (C) an addition reaction catalyst is low gas permeable. An optoelectronic device encapsulated therewith is highly reliable. | 03-08-2012 |
Yoshio Hamamoto, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110274229 | REACTOR BOTTOM REPAIRING METHOD - A heating laser beam is emitted to a cracked portion to remove moisture from the cracked portion, and subsequently, a welding laser beam is emitted to the cracked portion to heat and melt the cracked portion. The heating laser beam and the welding laser beam are emitted to an entire surface of the cylindrical body inside the reactor such as a stub tube penetrating through and fixed to a reactor bottom portion and a crack of the welded portion between the cylindrical body and the reactor bottom portion to thereby prevent a new crack from occurring and reactor water from leaking. | 11-10-2011 |
Yukimasa Hamamoto, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20110280081 | NON-VOLATILE SEMICONDUCTOR MEMORY - When a plurality of non-volatile memory cells in a memory cell array are simultaneously written, bit lines of the plurality of non-volatile memory cells are connected to M data lines, where M is an integer of two or more, based on a column address signal. N switches, where N is an integer of one or more, and a switch control circuit for controlling the N switches, are provided for each data line. The M switch control circuits control the M×N switches to change the levels or apply periods of drain voltages applied to the bit lines of the plurality of memory cells on a memory cell-by-memory cell basis. | 11-17-2011 |