| Patent application number | Description | Published |
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| 20090129724 | Organic Electroluminescent Optocouplers - An optocoupler including: a substrate comprising a photodetector; a transparent electrically-insulating layer disposed over the photodetector; and an organic electroluminescent device having an organic electroluminescent layer disposed between a first and a second electrode disposed over the transparent electrically-insulating layer; the photodetector arranged to detect light emitted from the organic electroluminescent device; wherein the optocoupler comprises a second current path between the first and second electrodes in addition to a first current path between the first and second electrode which in operation causes the organic electroluminescent layer to emit light. | 05-21-2009 |
| 20110024728 | Organic Thin Film Transistors and Methods of Making the Same - An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile. | 02-03-2011 |
| 20110034033 | Electronic Devices and Methods of Making the Same Using Solution Processing Techniques - A method of manufacturing an electronic device, the method comprising: providing a substrate; forming a patterned layer of removable material on the substrate; depositing, using an indiscriminate deposition method, a layer of a surface energy modifying material over the substrate comprising the patterned layer of removable material; removing the removable material from the substrate thereby forming a patterned surface of the substrate with surface energy modifying material in those areas not previously covered by the removable material and no surface energy modifying material in those areas previously covered by the removable material; and depositing one or more active components from solution on the patterned surface of the substrate using an indiscriminate deposition technique whereby a patterned layer of the one or more active components is formed based on the pattern of surface energy modifying material on the substrate. | 02-10-2011 |
| 20110186830 | Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process - The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ. | 08-04-2011 |
| Patent application number | Description | Published |
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| 20090050206 | Method of Preparing OPTO-Electronic Device - A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material. | 02-26-2009 |
| 20090101893 | Organic Thin Film Transistors - A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region. | 04-23-2009 |
| 20090189515 | Laminated interconnects for organic opto-electronic device modules and methods - A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet. | 07-30-2009 |
| 20100032662 | Organic Thin Film Transistors - A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region. | 02-11-2010 |
| 20100102300 | Active Matrix Optical Device - An active matrix organic optical device comprising a plurality of organic thin film transistors and a plurality of pixels disposed on a common substrate, wherein a common bank layer is provided for the organic thin film transistors and the pixels, the common bank layer defining a plurality of wells, wherein some of the wells contain the organic semiconducting material of the organic thin film transistors therein and others of the wells contain organic optically active material of the pixels therein. | 04-29-2010 |
| 20110053314 | Method of Fabricating Top Gate Organic Semiconductor Transistors - The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing. | 03-03-2011 |
| 20110101323 | ORGANIC THIN FILM TRANSISTORS - A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region. | 05-05-2011 |
| 20110127504 | Organic Thin Film Transistors - An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer. | 06-02-2011 |
