| Patent application number | Description | Published |
|---|
| 20090161402 | DATA STORAGE AND STACKABLE CONFIGURATIONS - A first memory device and second memory device have a same input/output layout configuration. To form a stack, the second memory device is secured to the first memory device. To facilitate connectivity, the second memory device is rotationally offset with respect to the first memory device in the stack to align outputs of the first memory device with corresponding inputs of the second memory device. The rotational offset of the second memory device with respect to the first memory device aligns one or more outputs of the first memory device with one or more respective inputs of the second memory device. Based on links between outputs and inputs from one memory device to another in the stack, the stack of memory devices can include paths facilitating one or more series connection configurations through he memory devices. | 06-25-2009 |
| 20090219767 | PRE-CHARGE VOLTAGE GENERATION AND POWER SAVING MODES - A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes. | 09-03-2009 |
| 20100115217 | DATA MIRRORING IN SERIAL-CONNECTED MEMORY SYSTEM - A method of data mirroring in a serial-connected memory system between a first and a second memory device. A bypass command is issued to the first memory device, then a write data packet is provided to the first and second memory devices, and then a write data packet command is provided to the first and second memory devices by wherein the write data packet is passed to the second memory device through the first memory device. Mirroring of the write data packet into the first and second memory devices is thereby achieved. ECC (error correction codes) within spare fields provide means for recovering data after failure. The serial-connected memory system is especially useful for implementing SSD (solid-state disk) memory systems. | 05-06-2010 |
| 20100157714 | APPARATUS AND METHOD FOR SELF-REFRESHING DYNAMIC RANDOM ACCESS MEMORY CELLS - A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array. | 06-24-2010 |
| 20100275056 | APPARATUS AND METHOD OF PAGE PROGRAM OPERATION FOR MEMORY DEVICES WITH MIRROR BACK-UP OF DATA - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 10-28-2010 |
| 20110002171 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 01-06-2011 |
| 20110016236 | APPARATUS AND METHOD FOR PRODUCING IDENTIFIERS REGARDLESS OF MIXED DEVICE TYPE IN A SERIAL INTERCONNECTION - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs, and NAND-, NOR- and AND-type Flash memories) is serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) as a packet are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID accompanying the fed DT for another device and the fed ID is latched in a register of the device. In a case of no match, the ID generation is skipped and no ID is generated for another device. The DT is combined with the generated or the received ID depending on the device type match determination. The combined DT and ID is as a packet transferred to a next device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. With reference to device type provided to the interconnected devices, IDs are sequentially generated. The SI containing the DT, the ID and an ID generation command is transmitted in a packet basis to a next device. A memory controller can recognize the total number of one DT, in response to the ID received from the last device. In a case of a “don't care” DT is provided to the interconnected devices, IDs are sequentially generated and the total number of the interconnected devices is recognized, regardless of the differences in DTs of the devices. | 01-20-2011 |
| 20110103169 | DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS - A dynamic random access memory (DRAM) device having memory cells is operated in a self-refresh mode and a normal mode. A mode detector provides a self-refresh mode signal in the self-refresh mode of operation. It includes a free-running oscillator for generating an oscillation signal independent of the self-refresh mode signal. In response to the oscillation signal, a self-request controller provides a self-refresh request signal in the self-refresh mode. The self-refresh signal is asynchoronized with the self-fresh mode signal and is provided to an address circuit to select a wordline for refreshing the memory cells thereof. The self-refresh request controller includes logic circuitry for arbitrating timing between initial active edges of the oscillation signal and the self-refresh mode signal and providing the self-refresh request and ceasing it, regardless of conflict between the self-refresh mode signal and the oscillation signal upon self-refresh mode entry and exit. The DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time. | 05-05-2011 |
| 20110122719 | PRE-CHARGE VOLTAGE GENERATION AND POWER SAVING MODES - A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. According to one embodiment, the input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Such an embodiment is useful over conventional methods because adjusting the pre-charge voltage can result in power savings. As an example, when in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes. | 05-26-2011 |
| 20110131445 | Apparatus and Method of PAGE Program Operation for Memory Devices with Mirror Back-Up of Data - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 06-02-2011 |
| 20110153974 | SYSTEM AND METHOD OF OPERATING MEMORY DEVICES OF MIXED TYPE - A memory system architecture is provided in which a memory controller controls memory devices in a serial interconnection configuration. The memory controller has an output port for sending memory commands and an input port for receiving memory responses for those memory commands requisitioning such responses. Each memory device includes a memory, such as, for example, NAND-type flash memory, NOR-type flash memory, random access memory and static random access memory. Each memory command is specific to the memory type of a target memory device. A data path for the memory commands and the memory responses is provided by the interconnection. A given memory command traverses memory devices in order to reach its intended memory device of the serial interconnection configuration. Upon its receipt, the intended memory device executes the given memory command and, if appropriate, sends a memory response to a next memory device. The memory response is transferred to the memory controller. | 06-23-2011 |
