| Patent application number | Description | Published |
|---|
| 20080211006 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory including a semiconductor substrate having an upper surface; a plurality of memory cell transistors formed in the semiconductor substrate, each memory cell transistor including a gate electrode having a gate insulating layer on the upper surface of the semiconductor substrate, a floating gate electrode layer on the gate insulating layer, an inter-gate insulating layer on the floating gate electrode layer, and a control gate electrode layer on the inter-gate insulating layer; a first oxide-based insulating film formed above the upper surface of the semiconductor substrate between the gate electrodes, and including an upper surface as high or higher than that of the floating gate electrode layer but lower than that of the control gate electrode layer; a nitride-based insulating film containing boron formed on the first oxide-based insulating film and the control gate layer; and a second oxide-based insulating film formed on the nitride-based insulating film. | 09-04-2008 |
| 20090047777 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming a gate electrode film on a semiconductor substrate via a gate insulating film; forming a mask film on the gate electrode film; separating the gate electrode film by using the mask film to form a plurality of gate electrodes; forming a first insulating film between the plurality of gate electrodes so that an upper portion of the first insulating film is lower than an upper surface of the gate electrode; forming a second insulating film on the upper portion of the first insulating film, removing the mask film so as to expose the gate electrode, and cleaning an exposed surface of the gate electrode by wet etching process with selectivity to the second insulating film so as to remove a native oxide film. | 02-19-2009 |
| 20090302367 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED BY THE METHOD - A method of fabricating a semiconductor device includes forming a first polycrystalline silicon layer on a gate insulating film so that a vertically intermediate portion has a higher dopant concentration than vertically upper and lower portions, forming a second polycrystalline silicon layer on an intergate insulating film so that a vertically intermediate portion has a higher dopant concentration than vertically upper and lower portions, executing a thermal oxidation treatment for the polycrystalline silicon layers with side surfaces of gate electrodes being exposed, thereby forming a silicon oxide film, selectively removing the silicon oxide film by an etch with use of a chemical solution, thereby forming recesses in side surfaces of the first and second polycrystalline silicon layers respectively, and burying insulating films between the gate electrodes respectively and forming air gaps in portions of the buried insulating films corresponding to the recesses respectively. | 12-10-2009 |
| 20100072534 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode corresponding to a memory cell transistor and a second gate electrode. The first gate electrode includes a floating gate electrode film, a first interelectrode insulating film and a control gate electrode film. The floating gate electrode film has a polycrystalline silicon film and the control gate electrode film having a silicide film. The second gate electrode includes a lower electrode film, a second interelectrode insulating film and an upper electrode film. The second interelectrode insulating film includes an opening. The lower electrode film includes a void below the opening of the second interelectrode insulating film. The upper electrode film includes a silicide film. The lower electrode film includes a polycrystalline silicon film and a silicide film which is located between the opening and the void. | 03-25-2010 |
| 20110104883 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming a gate insulating film on a semiconductor substrate, forming a first conductive layer on the gate insulating film, forming an intergate insulating film on the first conductive layer, forming a second conductive layer on the intergate insulating film, dividing the conductive layers and the intergate insulating film with a mask pattern formed on the second conductive layer, thereby forming a plurality of gate electrodes, forming a first recess on a first side wall of the first conductive layer and a second recess on a second side wall of the second conductive layer with side surfaces of the gate electrodes being exposed, and burying insulating films between the gate electrodes respectively and forming air gap portions respectively in portions of the buried insulating films corresponding to the recesses. | 05-05-2011 |
