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Haiting
Haiting Li, Shenzhen CN
| Patent application number | Description | Published |
|---|---|---|
| 20110090993 | SIGNAL PROCESSING METHOD AND DATA PROCESSING METHOD AND APPARATUS - The present invention discloses a signal processing method and a data processing method and apparatus. A time-domain to frequency-domain signal processing method includes: pre-processing time-domain data; pre-rotating the pre-processed data by using a rotation factor a·W | 04-21-2011 |
| 20110093275 | CODING METHOD, DECODING METHOD, CODEC METHOD, CODEC SYSTEM AND RELEVANT APPARATUSES - A coding method, a decoding method, a coding-decoding (codec) method, a codec system and relevant apparatuses are disclosed. The coding method includes: obtaining an amplitude vector and a length vector corresponding to a vector to be coded; sorting elements of the amplitude vector and elements of the length vector; and obtaining a position index value according to the sorted amplitude vector and the sorted length vector. A decoding method, a codec system, and relevant apparatuses are also provided. | 04-21-2011 |
| 20110185001 | Signal Processing Method and Data Processing Method and Apparatus - The present invention discloses a signal processing method and a data processing method and apparatus. A time-domain to frequency-domain signal processing method includes: pre-processing time-domain data; pre-rotating the pre-processed data by using a rotation factor a·W | 07-28-2011 |
Haiting Li, Shanghai CN
| Patent application number | Description | Published |
|---|---|---|
| 20100283926 | METHOD AND RESULTING CAPACITOR STRUCTURE FOR LIQUID CRYSTAL ON SILICON DISPLAY DEVICES - In a specific embodiment, the present invention provides an LCOS device. The device has a semiconductor substrate, e.g., silicon substrate. The device has a transistor formed within the semiconductor substrate. The transistor has a first node, a second node, and a row node. A first capacitor structure is coupled to the transistor. The first capacitor structure includes a first polysilicon layer coupled to the second node of the transistor. The first capacitor structure also has a first capacitor insulating layer overlying the first polysilicon layer and a second polysilicon layer overlying the insulating layer. The second polysilicon layer is coupled to a reference potential, e.g., ground. The device has a second capacitor structure coupled to the transistor. The second capacitor structure has a first metal layer coupled to the reference potential, a second capacitor insulating layer, and a second metal layer coupled to the second node of the transistor. A pixel electrode comprises the first metal layer. The pixel electrode is coupled to the second node of the transistor. A mirror surface is on the pixel electrode. The device has a light shielding layer formed from a portion of the second metal layer. | 11-11-2010 |
Haiting Li, Beijing CN
| Patent application number | Description | Published |
|---|---|---|
| 20120078618 | METHOD AND APPARATUS FOR GENERATING LATTICE VECTOR QUANTIZER CODEBOOK - A method and an apparatus for generating a lattice vector quantizer codebook are disclosed. The method includes: storing an eigenvector set that includes amplitude vectors and/or length vectors, where the amplitude vectors and/or length vectors are different from each other and correspond to a root leader of a lattice vector quantizer; storing storage addresses of the amplitude vectors and length vectors, where the amplitude vectors and length vectors correspond to the root leader and are in the eigenvector set; and generating a lattice vector quantizer codebook according to the eigenvector set and the storage addresses. | 03-29-2012 |
Haiting Wang, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110147765 | DUMMY STRUCTURE FOR ISOLATING DEVICES IN INTEGRATED CIRCUITS - The present disclosure provides an integrated circuit. The integrated circuit includes a first operational device having a first transistor of a first composition; a second operational device having a second transistor of the first composition; and an isolation transistor disposed between the first and second transistors, the isolation transistor having a second composition different from the first composition. | 06-23-2011 |
Haiting Zhang, Liaoning CN
| Patent application number | Description | Published |
|---|---|---|
| 20110089770 | SELF POWER-ACQUIRING QUICK-RESPONSIVE CONTROLLABLE REACTOR - This invention relates to a self power-acquiring quickly responsive controllable reactor whose coil of the main body portion contains a control winding ( | 04-21-2011 |