Haimoto
Takashi Haimoto, Kanagawa JP
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20120211719 | NONVOLATILE VARIABLE RESISTIVE DEVICE - According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode. | 08-23-2012 |
Takashi Haimoto, Tokyo JP
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20130228736 | MEMORY DEVICE - According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction. | 09-05-2013 |
20140061570 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a memory device includes a first electrode, a first resistance change layer, a first insulating section, a second electrode and an intermediate layer. The first resistance change layer is provided on the first electrode. The first insulating section is provided on the first resistance change layer. The second electrode is provided on the first resistance change layer. The second electrode is in contact with the first resistance change layer. The intermediate layer is provided between the second electrode and the first insulating section. The intermediate layer is in contact with the second electrode and the first insulating section. | 03-06-2014 |
Takashi Haimoto, Mie-Ken JP
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20140138598 | NONVOLATILE MEMORY DEVICE - According to one embodiment, nonvolatile memory device includes a semiconductor layer, a conductive layer and a resistance change layer. The semiconductor layer has an impurity concentration less than 1×10 | 05-22-2014 |