| Patent application number | Description | Published |
|---|
| 20090078916 | TANTALUM CARBIDE NITRIDE MATERIALS BY VAPOR DEPOSITION PROCESSES - Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaC | 03-26-2009 |
| 20090081868 | VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS - Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater. | 03-26-2009 |
| 20090104764 | Methods and Systems for Forming at Least One Dielectric Layer - A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer. | 04-23-2009 |
| 20090104782 | SELECTIVE ETCHING OF SILICON NITRIDE - Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H | 04-23-2009 |
| 20090191703 | PROCESS WITH SATURATION AT LOW ETCH AMOUNT FOR HIGH CONTACT BOTTOM CLEANING EFFICIENCY FOR CHEMICAL DRY CLEAN PROCESS - A method for removing oxides from the bottom surface of a contact hole is provided. The method provides efficient cleaning of the bottom surface without distortion of the contact hole upper and sidewall surfaces. | 07-30-2009 |
| 20090269930 | THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE - A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer. | 10-29-2009 |
| 20090269934 | PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE - Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound. | 10-29-2009 |
| 20100099263 | NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG OVER THERMAL OXIDE AND LOW DENSITY SURFACE DEFECTS - A method and apparatus for selectively etching doped semiconductor oxides faster than undoped oxides. The method comprises applying dissociative energy to a mixture of nitrogen trifluoride and hydrogen gas remotely, flowing the activated gas toward a processing chamber to allow time for charged species to be extinguished, and applying the activated gas to the substrate. Reducing the ratio of hydrogen to nitrogen trifluoride increases etch selectivity. A similar process may be used to smooth surface defects in a silicon surface. | 04-22-2010 |
| 20100129535 | Vapor Deposition Processes for Tantalum Carbide Nitride Materials - Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater. | 05-27-2010 |
