Patent application number | Description | Published |
20110111582 | METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM - Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic % (atomic percentage) or less (excluding 0). | 05-12-2011 |
20110136328 | METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM - According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with a substrate to deposit a polysilicon thin film on the substrate, wherein the source gas contains a silicon-based gas, an oxygen-based gas and a phosphorous-based gas. The mixture ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or lower (but, excluding zero). Oxygen in the thin film may be 0.8 atomic percent or lower (but, excluding zero). | 06-09-2011 |
20110294284 | METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM - According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with a substrate to deposit a polysilicon thin film on the substrate, wherein the source gas contains a silicon-based gas, a nitrogen-based gas and a phosphorous-based gas. The mixture ratio of the nitrogen-based gas to the silicon-based gas among the source gas may be 0.03 or lower (but, excluding zero). Nitrogen in the thin film may be 11.3 atomic percent or lower (but, excluding zero). | 12-01-2011 |
20120040520 | ULTRA-FINE-GRAINED POLYSILICON THIN FILM VAPOUR-DEPOSITION METHOD - Provided is a method of depositing an ultra-fine grain polysilicon thin film. The method includes forming a nitrogen atmosphere in a chamber loaded with a substrate, and supplying a source gas into the chamber to deposit a polysilicon thin film on the substrate, in which the source gas includes a silicon-based gas, a nitrogen-based gas, and a phosphorous-based gas. The forming of the nitrogen atmosphere may include supplying a nitrogen-based gas into the chamber. | 02-16-2012 |
20130101752 | METHOD FOR DEPOSITING CYCLIC THIN FILM - Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method includes the steps of depositing an insulating film by repeatedly performing a deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded, a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber, a reaction step for forming the deposited silicon as an insulating film including silicon by supplying a first reaction gas into the chamber and a second purge step for removing a non-reacted first reaction gas and a reacted byproduct from the chamber; and densifying the insulating film including silicon by supplying a plasma atmosphere into the chamber. | 04-25-2013 |
20130115783 | METHOD FOR DEPOSITING CYCLIC THIN FILM - Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber. | 05-09-2013 |
20130130480 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - Disclosed is a method for manufacturing a semiconductor device having a multilayer structure. The method for manufacturing a semiconductor device according to the present invention comprises the loading of a substrate into the chamber of a chemical vapor deposition apparatus and the forming of a multilayer structure in which a plurality of doped amorphous silicon layers and a plurality of insulation layers are alternately stacked. Said layers are stacked by alternately and repetitively forming the doped amorphous silicon layer on the substrate by supplying a conductive dopant and silicon precursor into the chamber where the substrate is loaded, and forming the insulation layer containing silicon on the substrate by introducing the silicon precursor and a reaction gas into the chamber where the substrate is loaded. | 05-23-2013 |
20130171827 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL-STRUCTURE MEMORY DEVICE - A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH | 07-04-2013 |
20130178066 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL-STRUCTURE MEMORY DEVICE - Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH | 07-11-2013 |
20140174356 | SUBSTRATE SUPPORTING UNIT AND SUBSTRATE PROCESSING APPARATUS MANUFACTURING METHOD OF THE SUBSTRATE SUPPORTING UNIT - Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed. | 06-26-2014 |
20140174357 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber is performed in a batch type with respect to the plurality of substrates. | 06-26-2014 |
20140190410 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. | 07-10-2014 |
20140209024 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, a buffer chamber having a storage space for storing the substrates, and a transfer chamber to which the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to side surfaces thereof, the transfer chamber comprising a substrate handler for transferring the substrates between the cleaning chamber, the buffer chamber, and the epitaxial chamber. The substrate handler successively transfers the substrates, on which the cleaning process is completed, into the buffer chamber, transfers the substrates stacked within the buffer chamber the epitaxial chamber, and successively transfers the substrates, on which the epitaxial layers are respectively formed, into the buffer chamber. | 07-31-2014 |
20140261186 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL-STRUCTURE MEMORY DEVICE - Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH | 09-18-2014 |