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| 20120003346 | SHEET SURFACE TREATING APPARATUS - A sheet surface treating apparatus includes a heater including a substrate and a heat generating element provided on the substrate; a transfer film which is movable while contacting the heater; a pressing member cooperating with the heater to form a nip for feeding a sheet carrying thermoplastic resin material, through the transfer film; wherein the sheet is fed by the nip together with the transfer film in a state that the thermoplastic resin material is in contact with the transfer film, and is heated by the heater in the nip so that a configuration of a surface of the transfer film is transferred to the thermoplastic resin material, and then is separated from the transfer film; wherein a downstream end of the heat generating element with respect to a sheet feeding direction is disposed at a position upstream of an end of the nip with respect to the sheet feeding direction, and a distance between the downstream end of the nip and the downstream end of the heat generating element is not less than 0.4 mm and not more than 2.5 mm. | 01-05-2012 |
| 20120060707 | HOLOGRAM FORMING APPARATUS AND HOLOGRAM FORMING METHOD - The present invention provides a hologram forming apparatus, including: an embossed hologram sheet; a roller which forms a nip portion between the embossed hologram sheet and the roller, wherein a recording medium bearing a toner image is conveyed to the nip portion so that the toner image is brought into contact with the embossed hologram sheet, and the recording medium and the embossed hologram sheet are heated while being nipped and conveyed in the nip portion; a cooling portion for cooling the recording medium that has passed through the nip portion and is in a contact state with the embossed hologram sheet; and a separating portion for separating the recording medium from the embossed hologram sheet, the recording medium having passed through the cooling portion and bearing the toner image on which an embossed shape of the embossed hologram sheet is transferred. | 03-15-2012 |
| 20120155939 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image forming unit for forming a toner image on a recording material; a fixing portion for fixing the toner image; a glossiness treatment unit, operable when a glossiness treatment mode is selected, for glossiness treatment of the toner image fixed on the recording material by heating the toner image, the glossiness treatment unit including a film movable in a feeding direction of the recording material, a heating member contacted to the film, a pressing member cooperating with the heating member to form a nip, with the film therebetween, for nipping and feeding the recording material; wherein in the glossiness treatment mode, the image forming unit forms, as a topmost layer, a toner image having a tone gradation provided by a dot growth type screening. | 06-21-2012 |
| 20120155940 | GLOSSINESS PROCESSING APPARATUS AND IMAGE FORMING APPARATUS - A glossiness processing apparatus for glossiness treatment includes a first glossiness treatment unit; a second glossiness treatment unit provided downstream of the first glossiness treatment unit with respect to a feeding direction of a sheet; wherein each of the units including a film movable having a surface in contact with an image surface of the sheet while moving; a heating member contacted to another surface of the film, the heating member including a plurality of heat generating elements arranged along a direction substantially perpendicular to a moving direction of the film; a pressing member cooperating with the heating member to form a nip, with the film therebetween, for nipping and feeding the sheet; wherein positions of the heat generating elements are offset relative to positions of the heat generating elements of the first glossiness treatment unit. | 06-21-2012 |
| 20120156604 | ELECTROPHOTOGRAPHIC CLEAR TONER AND IMAGE FORMING METHOD - Provide is a clear toner having a wide fixing temperature latitude so as to improve the degree of glossiness in a wide range of image density areas, from a white portion to a high image density portion, while ensuring sufficient fixing performance and color mixing in color portions. The clear toner has a storage elastic modulus G′ (130) of 1.0×10 | 06-21-2012 |
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| 20090194865 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE - A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness. | 08-06-2009 |
| 20100237452 | SEMICONDUCTOR DEVICE AND BACKSIDE ILLUMINATION SOLID-STATE IMAGING DEVICE - A semiconductor substrate has a first principal face and a second principal face opposite thereto. A pixel unit, an analog circuit and a digital circuit are formed in a first, second and third region of the semiconductor substrate. An interconnect is formed on each of the first and second principal faces of the second region. A plurality of penetrative electrodes is formed in the semiconductor substrate to penetrate the first and second principal faces. These penetrative electrodes are electrically connected with interconnects formed in the first and second principal faces of the second region. A guard ring is formed in the semiconductor substrate to penetrate the first and second principal faces, the guard ring is surrounding the penetrative electrodes. | 09-23-2010 |
| 20100264503 | SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode. | 10-21-2010 |
| 20100309353 | SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a solid-state imaging device includes a substrate, a lens, a lens holder, and a metal shield. The substrate includes a pixel region having a first well and has a second well at a periphery thereof, the second well being independent of the first well. The lens is provided above the pixel region in the substrate. The lens holder holds the lens. The metal shield is provided on the substrate and the lens holder and electrically connected to the second well of the substrate | 12-09-2010 |
| 20100327383 | SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad. | 12-30-2010 |
| 20110068476 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad. | 03-24-2011 |
| 20110241180 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE - A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness. | 10-06-2011 |
| 20120068291 | IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate. | 03-22-2012 |
| 20120242876 | SOLID-STATE IMAGE SENSING DEVICE, CAMERA MODULE, AND SOLID-STATE IMAGE SENSING DEVICE MANUFACTURING METHOD - According to one embodiment, a solid-state image sensing device includes a semiconductor substrate which includes a first surface and a second surface opposite to the first surface, a pixel which is provided in the semiconductor substrate and which photoelectrically converts light emitted via a lens on the second surface, a support substrate which is provided on a first insulating layer covering an element on the first surface and which includes a trench, and a first device which is provided on the first insulating layer and which is accommodated in the trench of the support substrate. | 09-27-2012 |
