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Hagiwara, Yokohama-Shi

Emi Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20120003346SHEET SURFACE TREATING APPARATUS - A sheet surface treating apparatus includes a heater including a substrate and a heat generating element provided on the substrate; a transfer film which is movable while contacting the heater; a pressing member cooperating with the heater to form a nip for feeding a sheet carrying thermoplastic resin material, through the transfer film; wherein the sheet is fed by the nip together with the transfer film in a state that the thermoplastic resin material is in contact with the transfer film, and is heated by the heater in the nip so that a configuration of a surface of the transfer film is transferred to the thermoplastic resin material, and then is separated from the transfer film; wherein a downstream end of the heat generating element with respect to a sheet feeding direction is disposed at a position upstream of an end of the nip with respect to the sheet feeding direction, and a distance between the downstream end of the nip and the downstream end of the heat generating element is not less than 0.4 mm and not more than 2.5 mm.01-05-2012

Isao Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090131596PROCESS FOR PRODUCING THERMOPLASTIC RESIN COMPOSITION, AND THERMOPLASTIC RESIN COMPOSITION PRODUCED BY THE SAME - A process for producing a thermoplastic resin composition includes kneading a mixture obtained by combining a rubber component with a ground product, the ground product being formed by grinding a thermoplastic resin molded article having an alloy resin of a polycarbonate and an ABS, and then molding the mixture after kneading. The mixture has 0.5 wt % or more and 1.5 wt % or less of the rubber component based on 100 wt % of the mixture.05-21-2009

Kazunari Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100061749IMAGE FORMING APPARATUS AND IMAGE FORMING SYSTEM - An image forming apparatus includes a developer bearing member configured to bear a developer to develop a latent image, a developer regulating member configured to regulate an amount of the developer carried on the bearing member, a voltage application unit that can apply a plurality of direct current voltages of different values between the bearing member and the regulating member, and a current detection unit that can detect a plurality of direct currents of different values flowing in the regulating member when the voltage application unit applies the plurality of direct current voltages, wherein the image forming apparatus sets a direct current voltage value Vb applied by the voltage application unit when developing the latent image, so that the following expression is satisfied: |Vb|>|Vbmin|, where Vbmin indicates a direct current voltage value when the direct current detected by the current detection unit is a minimum value.03-11-2010

Kenichiro Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090194865METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE - A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.08-06-2009
20100237452SEMICONDUCTOR DEVICE AND BACKSIDE ILLUMINATION SOLID-STATE IMAGING DEVICE - A semiconductor substrate has a first principal face and a second principal face opposite thereto. A pixel unit, an analog circuit and a digital circuit are formed in a first, second and third region of the semiconductor substrate. An interconnect is formed on each of the first and second principal faces of the second region. A plurality of penetrative electrodes is formed in the semiconductor substrate to penetrate the first and second principal faces. These penetrative electrodes are electrically connected with interconnects formed in the first and second principal faces of the second region. A guard ring is formed in the semiconductor substrate to penetrate the first and second principal faces, the guard ring is surrounding the penetrative electrodes.09-23-2010
20100264503SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.10-21-2010
20100309353SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a solid-state imaging device includes a substrate, a lens, a lens holder, and a metal shield. The substrate includes a pixel region having a first well and has a second well at a periphery thereof, the second well being independent of the first well. The lens is provided above the pixel region in the substrate. The lens holder holds the lens. The metal shield is provided on the substrate and the lens holder and electrically connected to the second well of the substrate12-09-2010
20100327383SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad.12-30-2010
20110068476SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.03-24-2011
20110241180METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE - A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.10-06-2011

Patent applications by Kenichiro Hagiwara, Yokohama-Shi JP

Masahiro Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090294367METHOD AND APPARATUS FOR CONDENSATE DEMINERALIZATION - A method and an apparatus for performing condensate demineralization which are capable of producing a high-purity treated water containing low concentrations of sulfate ions and nitrate ions derived from TOC eluted from a cation exchange resin and anion exchange resin. A condensate demineralization method for performing a demineralization treatment of a condensate from a boiling-water reactor nuclear power plant using an ion exchange resin, wherein the method employs a mixed bed containing a uniform mixture of a strongly acidic, uniform particle size, gel-type cation exchange resin having an average particle size within a range from 450 to 600 μm and a resin particle existence ratio within a range specified by average particle size ±100 μm of not less than 95%, and a strongly basic type 1 porous anion exchange resin having a Gaussian particle size distribution, the mixed bed is mixed uniformly so that the existence ratio of the anion exchange resin is within ±5% of the design standard value across the entire mixed bed, and the demineralization treatment is performed by bringing the condensate into contact with the mixed bed.12-03-2009
20090296873METHOD AND APPARATUS FOR CONDENSATE DEMINERALIZATION - A method and an apparatus for performing a condensate demineralization treatment within a condensate demineralization apparatus of a nuclear power plant, which are capable of producing a high-purity treated water containing a low concentration of sulfate ions derived from the TOC eluted from a cation exchange resin. A condensate demineralization method for performing a demineralization treatment of a condensate from a nuclear power plant using an ion exchange resin, wherein the demineralization treatment of the condensate is performed by bringing the condensate into contact with an ion exchange resin bed that includes a mixed bed prepared by uniformly mixing a strongly acidic gel-type cation exchange resin and a strongly basic type 1 porous anion exchange resin having a cross-linking within a range from 1% to 4%.12-03-2009

Masaya Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20110241810PERMANENT MAGNET AND METHOD FOR MANUFACTURING THE SAME, AND MOTOR AND POWER GENERATOR USING THE SAME - According to one embodiment, a permanent magnet is provided with a sintered body having a composition represented by R(Fe10-06-2011

Shinsuke Hagiwara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080211283Vehicle seat assembly - Disclosed is a vehicle seat assembly having a feature in a seat cushion angle adjustment mechanism of a seat cushion in a simple configuration. A vehicle seat assembly according to an embodiment of the present invention comprises a seat back, a seat cushion coupled to the seat back, and a seat cushion angle adjustment mechanism for adjusting the seat angle of the seat cushion. The seat cushion angle adjustment mechanism comprises a seat cushion frame, a pivotal coupling member to pivotably couple the seat cushion frame to a slider of the seat rail, a guided part provided at a position away from a coupled position of the seat cushion frame to the pivotal coupling member, and a guide member having a guide groove which engages the guided part and guides the movement of the guided part and disposed with an angle between the guide groove and the slide surface of the seat rail set to a specific angle α.09-04-2008