| Patent application number | Description | Published |
|---|
| 20080231478 | Solid Oxide Fuel Cell With Sealed Structure - This tactile interface includes a layer ( | 09-25-2008 |
| 20080246737 | Method and Devices of Transmitting Tactile Information Description - Method of transmitting tactile information to a tactile display with a touch plate containing pads, the touch plate being controlled by a server, in which,
| 10-09-2008 |
| 20080307786 | Multi-Stable Actuator Based on Shape Memory Alloy and Touch-Sensitive Interface Using Same - The multistable actuator ( | 12-18-2008 |
| 20100031803 | TACTILE OR HAPTIC DEVICE, AND A MUSICAL KEYBOARD WITH AT LEAST ONE SUCH SIMULATION DEVICE - A tactile or haptic sensation simulation device designed to oppose the movement of a manual control component with a reaction reflecting the movement of the control, where the said device has a chamber containing a magneto-rheological fluid, a mobile element interacting mechanically with the fluid and intended to be linked mechanically to the control component, where the said element is mobile between two predetermined positions, at least one sensor with a cinematic and/or dynamic range that is representative of the movement of the control component, a control component and means for the generation of a suitable magnetic field around the chamber so as to apply a magnetic field that is dependent on the dynamic characteristics to be simulated for the movement of the manual control component, and the real-time measurements, the whole being such that the apparent viscosity of the magneto-rheological fluid varies over the travel of the manual control component. | 02-11-2010 |
| Patent application number | Description | Published |
|---|
| 20100283724 | DAMPING DEVICE CAPABLE OF PROVIDING INCREASED STIFFNESS - Damping device to impose a reaction to the displacement of a manual operating device ( | 11-11-2010 |
| 20110128135 | HAPTIC INTERFACE WITH INCREASED BRAKING FORCE - A haptic interface including an element that interacts with a user; a rotation shaft with a longitudinal axis to which the user interaction element is fixed in rotation; a fluid interaction element, the fluid interaction element being fixed in rotation to the shaft, the fluid being of magneto-rheological type, a system generating magnetic field in the fluid; and a control unit capable of generating orders to magnetic field generation system so as to modify the magnetic field. The interaction element includes a cylindrical wall of revolution with a longitudinal axis, including through openings and/or patterns in relief. | 06-02-2011 |
| 20110181405 | FORCE FEEDBACK INTERFACE WITH IMPROVED SENSATION - An haptic interface including a knob manipulated by a user, a rotation shaft with a longitudinal axis to which the knob is fixed in rotation, an interaction element with a magneto-rheological fluid in rotation with the shaft, the fluid, a system for generating a magnetic field in the fluid, and a control unit capable of generating orders to the system for generating the magnetic field to modify the magnetic field. The system includes a coil type mechanism generating a variable magnetic field, and a permanent magnet type mechanism generating a permanent magnetic field. | 07-28-2011 |
| 20110228252 | DEVICE AND METHOD FOR MEASURING THE POSITION OF AT LEAST ONE MOVING OBJECT IN A THREE-DIMENSIONAL GRID - A device for measuring the position of at least one moving object in a three-dimensional grid. The device comprises: at least one optical head comprising an independent laser sources array outputting collimated laser beams, arranged about a central photodetector with a single sensitive cell; at least one movable base with two rotational degrees of freedom whereto said array is secured; and control electronics. | 09-22-2011 |
| Patent application number | Description | Published |
|---|
| 20090242998 | PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE - A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack. | 10-01-2009 |
| 20100163952 | Flash Cell with Integrated High-K Dielectric and Metal-Based Control Gate - A semiconductor device is described having an integrated high-k dielectric layer and metal control gate. A method of fabricating the same is described. Embodiments of the semiconductor device include a high-k dielectric layer disposed on a floating gate. The high-k dielectric layer defines a recess. A metal control gate is formed in the recess. | 07-01-2010 |
| 20100164603 | Programmable fuse and anti-fuse elements and methods of changing conduction states of same - A programmable anti-fuse element includes a substrate ( | 07-01-2010 |
| 20110147837 | DUAL WORK FUNCTION GATE STRUCTURES - A semiconductor chip having a transistor is described. The transistor having a gate electrode disposed over a gate dielectric. The gate electrode comprised of first gate material disposed on the gate dielectric and second gate material disposed on the gate dielectric. The first gate material being different than the second gate material. The second gate material also located at a source region or drain region of said gate electrode. | 06-23-2011 |
| 20110215422 | PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE - A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack. | 09-08-2011 |
