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Haeusler
Alfred Haeusler, Freising DE
| Patent application number | Description | Published |
|---|---|---|
| 20090130805 | ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS - The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer ( | 05-21-2009 |
| 20090212393 | METHOD OF MANUFACTURING AN ELECTRONIC DEVICE INCLUDING A PNP BIPOLAR TRANSISTOR - A method of manufacturing an electronic device including a PNP bipolar transistor comprises forming a collector in a substrate, depositing a base layer and an emitter layer on the substrate, and growing a nitride interface layer on the base layer as a base current modulation means, such that the nitride interface layer is arranged between the base layer and the emitter layer. | 08-27-2009 |
| 20100148308 | Dopant Profile Control for Ultrashallow Arsenic Dopant Profiles - A method of manufacturing a semiconductor device comprises growing or depositing an implantation oxide layer, implanting a dopant, activating the dopant, and removing the implantation oxide layer after the step of activating the dopant. | 06-17-2010 |
| 20100283119 | Semiconductor Device Including a Deep Contact and a Method of Manufacturing Such a Device - A semiconductor device includes a buried layer and a deep contact for providing a low resistive connection to the buried layer. The deep contact is formed by doped polycrystalline silicon. A method of manufacturing a semiconductor device and a deep contact for providing a low resistive connection to the buried layer, with the steps of forming a buried layer, providing an active region adjacent the buried layer and forming a deep contact for providing a low resistive connection to the buried layer by patterning a contact shape for the deep contact on an upper surface of the active region, removing part of the active region underneath the contact shape to create a deep contact cavity. Subsequently a polycrystalline silicon layer for filling the deep contact cavity is deposited and doped. | 11-11-2010 |
| 20110070719 | TUNING OF SOI SUBSTRATE DOPING - A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer. | 03-24-2011 |
Alfred Haeusler US
| Patent application number | Description | Published |
|---|---|---|
| 20110111553 | ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS - The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer ( | 05-12-2011 |
Felix Haeusler, Osnabrueck DE
| Patent application number | Description | Published |
|---|---|---|
| 20120015771 | TRANSMISSION UNIT HAVING A TRANSVERSAL DEGREE OF FREEDOM - A transmission unit for a driven vehicle wheel comprising an input shaft having a pinion and an output shaft having a ring gear which are parallel so that the input and the output shafts can move transverse relative to one another. At least one planetary gearwheel engages the pinion and the ring gear and is supported by a planetary carrier such that the carrier, the pinion and the ring gear are coaxial with one another. A second carrier is supported coaxial with the ring gear such that the planetary gearwheel is axially arranged between the first and second carriers. The transmission unit enables transverse decoupling between the input and the output, and transmission of large torques. The transmission unit decouples wheel-hub motors from the wheel suspension, in relation to deflection movement of the driven wheel, which facilitates the reduction of the unsprung masses of a wheel-hub drive. | 01-19-2012 |
Marcus Haeusler, Erlangen DE
| Patent application number | Description | Published |
|---|---|---|
| 20110266876 | POWER SUPPLY SYSTEM AND PHOTOVOLTAIC DEVICE THEREFOR - A power supply system (SYS) and a photovoltaic device (PVE) intended therefor and comprising a plurality of DC voltage-generating photovoltaic modules (PVM) are proposed, wherein the photovoltaic modules (PVM) for generating a DC voltage (Udc*) exceeding the withstand voltage or dialectric strength (Umodmax) of the photovoltaic modules (PVM) and suitable for the high-voltage DC transmission are connected in parallel or in series to one another, wherein the power supply system (SYS) comprises a converter substation (UFS) that can be connected to a power supply network (SVN) installed for users, and includes a high-voltage DC transmission power line (HGUE) so as to transmit in the high voltage range the DC voltage (Udc*) generated by the photovoltaic device (PVE) to the converter substation (UFS). | 11-03-2011 |
Olaf Haeusler, Fletre FR
| Patent application number | Description | Published |
|---|---|---|
| 20110200680 | WATER INSOLUBLE POLYMER: STARCH-BASED FILM COATINGS FOR COLON TARGETING - A controlled release delivery dosage form for controlled release of an active ingredient, includes an active ingredient coated in a polymeric mixture of: at least a water insoluble polymer and a starch composition including at least one component selected from the group consisting of a starch having an amylose content of between 20 and 45%, a modified starch having an amylose content of between 50 and 80% and a legume starch. The present invention also relates to the use and method for making the same. | 08-18-2011 |
| 20110256230 | WATER INSOLUBLE POLYMER: INDIGESTIBLE WATER-SOLUBLE POLYSACCHARIDE FILM COATINGS FOR COLON TARGETING - A controlled release pharmaceutical dosage form for controlled release of an active ingredient, includes an active ingredient coated by a polymeric mixture of: at least a water insoluble polymer; and at least an indigestible water-soluble oligosaccharide. The use and method of making the same are also described. | 10-20-2011 |