Patent application number | Description | Published |
20100268032 | ENDOSCOPE WITH AN ELECTRIC HEATING SYSTEM - An endoscope is provided, comprising a first tube ( | 10-21-2010 |
20110208001 | ENDOSCOPE - Provided is an endoscope with a handle and an endoscope shaft connected to the handle, which has a bendable section and a rigid section, adjoining it, with a support extending in the longitudinal direction of the endoscope shaft, wherein the bendable section has a flexible outer tube the end of which facing the rigid section rests on the support, wherein a fixing sleeve is connected to the end section and covers the end of the outer tube facing the rigid section such that said end is clamped for fixing between the fixing sleeve and the support. | 08-25-2011 |
20120265017 | ENDOSCOPE WITH VARIABLE DIRECTION OF VIEW - An endoscope includes a handle and a shaft connected thereto. Imaging optics are arranged in the shaft that image an object located in the direction of view of the imaging optics in front of the shaft as an image and which to set the desired direction of view. The imaging optics comprise a swivellably housed deflecting unit positioned at the distal end of the shaft facing away from the handle. The possible swivel range of the imaging optics has a first and a second limit, as well as an actuating element, which is attached to the handle and which is mechanically connected to the deflecting unit. Thereby the swivel position of the deflecting unit within the swivel range can be changed in order to set a desired direction of view. A first mechanical stop is provided against which the deflecting unit lies when the first limit is reached. | 10-18-2012 |
20130345637 | TROCAR DEVICE - A trocar device includes a main part that has a first and a second end. A shaft tube is connected to the second end of the main part. A through-opening for receiving an instrument extends from the first end of the main part to the end of the shaft tube that faces away from the main part. A sealing unit is disposed in the main part and has an elastic sealing element having a hollow-cylindrical wall, which divides the through-opening into a first region that runs from the sealing unit as far as the first end of the main body, and into a second region that runs from the sealing unit as far as the end of the shaft tube that faces away from the main part. When the instrument has been properly inserted in the through-opening, the seaing element seals off the two regions from each other. | 12-26-2013 |
20140316194 | ENDOSCOPE WITH A RIGID CURVED SHAFT AS WELL AS PROCESS FOR PRODUCING SUCH AN ENDOSCOPE - An endoscope is provided, with a main body and a rigid shaft, extending from the main body, which has a first section which extends in a rectilinear manner, a curved second section adjoining it and a third section, adjoining the second section, which forms a distal end of the shaft. The shaft includes, for receiving an instrument, a one-piece instrument tube which extends to the distal end of the shaft and has an open end there, and an optics module by means of which an image of an area in front of the distal end of the shaft can be recorded. A cladding tube extending from the main body to the distal end is provided, in which the instrument tube and the optics module are arranged, and which includes a rectilinear part for the first section and a curved part, connected to the rectilinear part, for the second section. | 10-23-2014 |
Patent application number | Description | Published |
20110133314 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method for producing a semiconductor wafer includes pulling a single crystal of semiconductor material, slicing a semiconductor wafer from the single crystal and polishing the semiconductor wafer with the polishing pad and polishing agent. The polishing agent is free of solid materials having abrasive action and the polishing pad contains fixedly bonded solid materials with abrasive action. During polishing the polishing agent is supplied in a gap between the semiconductor wafer and polishing pad. The polishing agent has a pH value in a range of 9.5 to 12.5. | 06-09-2011 |
20110316128 | Semiconductor Wafers Of Silicon and Method For Their Production - Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method. | 12-29-2011 |
20120058040 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor. | 03-08-2012 |
20120060562 | METHOD FOR PRODUCING THIN SILICON RODS - The invention relates to a method for producing thin silicon rods ( | 03-15-2012 |
20120193214 | PROCESS FOR PURIFYING CHLOROSILANES BY DISTILLATION - The invention relates to a process for purifying chlorosilanes by distillation, which includes providing a boron-containing mixture of chlorosilanes containing TCS, DCS and STC and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein low-boiling boron compounds are branched off from the distillation columns by means of overhead streams containing boron-enriched DCS and high-boiling boron compounds are branched off by means of a boron-enriched bottom stream containing high boilers. | 08-02-2012 |
20130011558 | PROCESS FOR PRODUCING POLYSILICON - A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl | 01-10-2013 |
20140105804 | REACTOR AND PROCESS FOR ENDOTHERMIC GAS PHASE REACTION IN A REACTOR - The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500° C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process. | 04-17-2014 |
20140105805 | PROCESS FOR HYDROGENATING SILICON TETRACHLORIDE TO TRICHLOROSILANE - The invention provides a process for hydrogenating silicon tetrachloride in a reactor, in which reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature of greater than 900° C. at a pressure between 4 and 15 bar, first by means of at least one heat exchanger made from graphite and then by means of at least one heating element made from SiC-coated graphite, the temperature of the heating elements being between 1150° C. and 1250° C., wherein the reactant gas includes at least one boron compound selected from the group consisting of diborane, higher boranes, boron-halogen compounds and boron-silyl compounds, the sum of the concentrations of all boron compounds being greater than 1 ppmv based on the reactant gas stream. | 04-17-2014 |