Patent application number | Description | Published |
20110061729 | Solar Cell and Method of Manufacturing the Same - Provided are a solar cell and a method of manufacturing the same. The method includes implanting impurities of a second conductivity type opposite to a first conductivity type on the entire surface of a semiconductor substrate of the first conductivity type to form an emitter layer, forming a first anti-reflective coating (ARC) layer on the emitter layer, patterning a portion of the first anti-reflective coating (ARC) layer where a front electrode will be formed, forming a second anti-reflective coating (ARC) layer on the first anti-reflective coating (ARC) layer and the emitter layer, and forming the front electrode and a rear electrode on front and rear surfaces of the semiconductor substrate. In this method, a double structure of two anti-reflective coating (ARC) layers with different thicknesses may be formed to make electrode patterns distinct, thereby facilitating alignment of electrodes. | 03-17-2011 |
20110277824 | Solar Cell and Method of Manufacturing the Same - Provided are a solar cell and a method of manufacturing the same. The method includes implanting impurities of a second conductivity type opposite to a first conductivity type into a front surface of a semiconductor substrate of the first conductivity type to form an emitter layer, forming a mask layer on the emitter layer, patterning the mask layer by coating etching paste on a portion of the mask layer where a front electrode will be formed, implanting high-concentration impurities into the portion of the mask layer where the front electrode will be formed to form a heavily doped region, removing the remaining mask layer, forming an anti-reflective coating (ARC) on the emitter layer, forming the front electrode on the front surface of the semiconductor substrate, and forming a rear electrode on a rear surface of the semiconductor substrate. In the method of manufacturing the solar cell, the patterning of the front surface of the semiconductor substrate includes directly coating a corrosive emulsion on the mask layer using a screen printing process instead of complicated photolithography and etching processes so that a desired pattern can be formed using a relatively simple process. | 11-17-2011 |
20120090682 | Solar Cell and Manufacturing Method Thereof - A solar cell and a manufacturing method thereof are provided. The method includes forming a microstructure including a texturing on the surface of a semiconductor substrate of a first conductive type, forming a plurality of nanostructures on the surface of the semiconductor substrate, forming an emitter layer by implanting impurities of a second conductive type opposite to the first conductive type in a front face of the semiconductor substrate, forming an anti-reflective coating (ARC) on the emitter layer, forming a front electrode passing through a portion of the ARC and being coupled to the emitter layer, and forming a back electrode on a rear face of the semiconductor substrate of the first conductive type, the rear face being opposite to the face on which the front electrode is formed. A dominant light-collecting characteristic can be approached by forming nanostructures on a semiconductor substrate of a solar cell. | 04-19-2012 |
Patent application number | Description | Published |
20100095497 | MONOLITHIC DUPLEXER - A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter. | 04-22-2010 |
20130087707 | INFRARED THERMAL DETECTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal legal configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light. | 04-11-2013 |
20130112876 | INFRARED DETECTORS - In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate. | 05-09-2013 |
20130161515 | INFRARED RAY DETECTOR AND METHOD OF DETECTING INFRARED RAYS BY USING THE SAME - A infrared ray detector includes a first metal layer; a second metal layer on the first metal layer and configured to absorb infrared rays; a thermistor layer below the second metal layer, the thermistor layer having a resistance that changes according to infrared rays absorbed in the second metal layer; a thermal leg below the thermistor layer and separated from the first metal layer; and a control unit configured to control a gap between the first metal layer and the thermal leg. | 06-27-2013 |
20140175284 | INFRARED DETECTOR INCLUDING BROADBAND LIGHT ABSORBER - An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer. | 06-26-2014 |
20140217289 | INFRARED DETECTOR - An infrared detector may include a substrate, a resonant unit spaced apart from the substrate, the resonant unit configured to generate heat by inducing resonance at a plurality of wavelengths of incident infrared light, a thermistor layer configured to support the resonant unit and be spaced apart from the resonant unit, the thermistor layer having a resistance value that varies according to the heat generated in the resonant unit, and a connection unit configured to support the thermistor layer such that the thermistor layer is spaced apart from the substrate and electrically connect the thermistor layer to the substrate. | 08-07-2014 |
20140246749 | INFRARED DETECTOR AND INFRARED IMAGE SENSOR INCLUDING THE SAME - An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber. | 09-04-2014 |
20140353506 | ELECTROMAGNETIC WAVE SPECTRUM ANALYZER AND INFRARED THERMAL IMAGE ANALYZER INCLUDING MULTIPLE RESONANCE STRUCTURES EACH HAVING DIFFERENT RESONANCE FREQUENCY - An electromagnetic wave spectrum analyzer includes a plurality of resonance structures each having a different resonance frequency, a plurality of thermal legs configured to support the plurality of resonance structures, a substrate including circuit elements configured to detect resistance changes in the plurality of thermal legs, and a signal processing unit configured to analyze a spectrum of incident electromagnetic waves from the resistance changes. The plurality of thermal legs are formed of a thermistor material of which an electrical resistance is changed due to thermal energy of electromagnetic waves absorbed by the plurality of resonance structures. | 12-04-2014 |