Patent application number | Description | Published |
20100127182 | X-ray radiation detector for use in a CT system - At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention. | 05-27-2010 |
20100246758 | X-RAY RADIATION DETECTOR FOR DETECTING IONIZING RADIATION, IN PARTICULAR FOR USE IN A CT SYSTEM - An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention. | 09-30-2010 |
20110186788 | Radiation Converter Material, Radiation Converter, Radiation Detector, Use of a Radiation Converter Material and Method for Producing a Radiation Converter Material - A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·10 | 08-04-2011 |
20110210254 | METHOD FOR PRODUCING A SCINTILLATOR AND SCINTILLATOR - A method is disclosed, in at least one embodiment, for producing a scintillator for a radiation detector, in which the scintillator is produced in layers by depositing a scintillator material using a PVD process. By using a PVD process, owing to lower process temperatures of less than 300° C., it is possible to produce scintillators with decay times of less than 1.1 ns over large surfaces. In this way, the prerequisites for quantitative and energy-selective detection of individual radiation quanta can be satisfied even with fluxes of more than 10 | 09-01-2011 |
20110253886 | X-Ray Detector Comprising A Directly Converting Semiconductor Layer And Calibration Method For Such An X-Ray Detector - An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. In at least one embodiment, it includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking account of the present polarization state without using X-ray radiation. At least one embodiment of the invention additionally relates to a calibration method for such an X-ray detector. | 10-20-2011 |
20120193739 | Direct Radiation Converter, Radiation Detector, Medical Apparatus And Method For Producing A Direct Radiation Converter - A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction. | 08-02-2012 |
20130161773 | DETECTOR ELEMENT, RADIATION DETECTOR, MEDICAL DEVICE, AND METHOD FOR PRODUCING SUCH A DETECTOR ELEMENT - A detector element is disclosed, including a semiconducting converter element and a number of pixilated contacts arranged thereon. A radiation detector is also disclosed including such a detector element, along with a medical device having one or more such radiation detectors. Finally, a method for producing a detector element is disclosed, which includes forming pixelated contacts by way of a photolithographic process on the semiconducting converter element using a lithographic mask arranged on a converter element protective layer. | 06-27-2013 |