Patent application number | Description | Published |
20090229754 | SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS - A shower head is provided in a processing chamber for processing a substrate therein. Further, the shower head has a facing surface facing a mounting table for mounting thereon the substrate and serves to supply one or more gases through the facing surface toward the substrate. The shower head includes a central gas supply unit for supplying a first gas through a central portion of the facing surface toward the substrate, a peripheral gas supply unit for supplying a second gas through a peripheral portion of the facing surface toward the substrate and a gas exhaust unit, provided with a plurality of gas exhaust holes formed between the central gas supply unit and the peripheral gas supply unit, for exhausting the first and the second gas from the facing surface. | 09-17-2009 |
20090236041 | SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS - A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table. | 09-24-2009 |
20090245971 | COUPLING MEMBER AND PLASMA PROCESSING APPARATUS - A coupling member is employed to couple components of a plasma processing apparatus which processes a substrate by using a plasma. The coupling member includes a threaded rod portion which passes through one component and is screwed and fixed to another component, a head portion which supports the one component and has a diameter larger than that of the threaded rod portion, and an elastic portion which is interposed between the threaded rod portion and the head portion, wherein the elastic portion has a larger strain to an external force than those of the threaded rod portion and the head portion. | 10-01-2009 |
20090314432 | BAFFLE PLATE AND SUBSTRATE PROCESSING APPARATUS - A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber. | 12-24-2009 |
20100230051 | SHOWER HEAD AND PLASMA PROCESSING APPARATUS HAVING SAME - A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; and a plurality of bar-shaped heat transfer columns standing on the opposing surface. Here, the heat transfer columns have varying lengths and/or thicknesses to adjust heat capacities thereof. The heat transfer columns are made of one of aluminum, stainless steel, and copper. | 09-16-2010 |
20100230052 | SHOWER HEAD AND PLASMA PROCESSING APPARATUS HAVING SAME - A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; a plurality of gas exhaust holes extending between the facing surface and the opposing surface to perform gas exhaust from the facing surface toward the opposing surface; and a plurality of electrodes provided on the opposing surface, an ion-confining voltage being applied to the electrodes. | 09-16-2010 |
20110094995 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna. | 04-28-2011 |
20110284165 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus that is capable of promoting improvement of in-plane uniformity of a process compared to a conventional technology, promoting miniaturization of the apparatus and improvement of processing efficiency, and easily changing an interval between an upper electrode and a lower electrode. The plasma processing apparatus includes a lower electrode provided in a processing chamber; an upper electrode having a function of a shower head and capable of moving up and down; a lid provided at an upper side of the upper electrode and airtightly blocking an upper opening of the processing chamber; a plurality of exhaust holes formed on a facing surface of the upper electrode; an annular member capable of moving up and down with the upper electrode by being formed to protrude downward along a circumferential portion of the upper electrode, and forming a processing space surrounded by the lower electrode, the upper electrode, and the annular member at a descending location; and a coil disposed on an inner wall portion of the annular member and accommodated in a container formed of a dielectric material. | 11-24-2011 |
20120103523 | PLASMA PROCESSING APPARATUS - The present disclosure provides a plasma processing apparatus capable of improving uniformity of a process on a substrate surface. The plasma processing apparatus performs a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber. The plasma processing apparatus includes a processing chamber main body having a top opening and formed in a container shape; an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging annular dielectric members and metal members, all having different diameters, and by airtightly sealing gaps between the dielectric members and the metal members; gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and a high frequency coil provided on an upper portion of the dielectric members and provided at the outside of the processing chamber. | 05-03-2012 |
20120111501 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a lower electrode which is provided in a process chamber and functions as a holding stage on which a substrate is placed; an upper electrode which functions as the shower head for introducing a gas and is vertically movable; a cover body which is provided over the upper electrode and hermetically closes an upper opening of the process chamber; an isolated space providing member which is provided to close a space between the upper electrode and the cover body, provides therein an isolated space isolated from a space outside the isolated space providing member, and includes therein an inlet/outlet through which a gas is introduced/exhausted, wherein a size of the isolated space varies as the upper electrode is vertically moved; and a gas introducing and exhausting mechanism which introduces/exhausts a gas into/from the isolated space of the isolated space providing member. | 05-10-2012 |