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Hachishiro Iizuka

Hachishiro Iizuka, Nirasaki City JP

Patent application numberDescriptionPublished
20090229754SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS - A shower head is provided in a processing chamber for processing a substrate therein. Further, the shower head has a facing surface facing a mounting table for mounting thereon the substrate and serves to supply one or more gases through the facing surface toward the substrate. The shower head includes a central gas supply unit for supplying a first gas through a central portion of the facing surface toward the substrate, a peripheral gas supply unit for supplying a second gas through a peripheral portion of the facing surface toward the substrate and a gas exhaust unit, provided with a plurality of gas exhaust holes formed between the central gas supply unit and the peripheral gas supply unit, for exhausting the first and the second gas from the facing surface.09-17-2009
20090236041SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS - A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table.09-24-2009
20090245971COUPLING MEMBER AND PLASMA PROCESSING APPARATUS - A coupling member is employed to couple components of a plasma processing apparatus which processes a substrate by using a plasma. The coupling member includes a threaded rod portion which passes through one component and is screwed and fixed to another component, a head portion which supports the one component and has a diameter larger than that of the threaded rod portion, and an elastic portion which is interposed between the threaded rod portion and the head portion, wherein the elastic portion has a larger strain to an external force than those of the threaded rod portion and the head portion.10-01-2009
20090314432BAFFLE PLATE AND SUBSTRATE PROCESSING APPARATUS - A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.12-24-2009
20100230051SHOWER HEAD AND PLASMA PROCESSING APPARATUS HAVING SAME - A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; and a plurality of bar-shaped heat transfer columns standing on the opposing surface. Here, the heat transfer columns have varying lengths and/or thicknesses to adjust heat capacities thereof. The heat transfer columns are made of one of aluminum, stainless steel, and copper.09-16-2010
20100230052SHOWER HEAD AND PLASMA PROCESSING APPARATUS HAVING SAME - A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; a plurality of gas exhaust holes extending between the facing surface and the opposing surface to perform gas exhaust from the facing surface toward the opposing surface; and a plurality of electrodes provided on the opposing surface, an ion-confining voltage being applied to the electrodes.09-16-2010
20110094995PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.04-28-2011

Patent applications by Hachishiro Iizuka, Nirasaki City JP

Hachishiro Iizuka, Nirasaki JP

Patent application numberDescriptionPublished
20100307686SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus capable of effectively heating each component without generating an abnormal electric discharge. The substrate processing apparatus 12-09-2010
20110061813PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.03-17-2011
20110067815PLASMA PROCESSING APPARATUS AND SHOWER HEAD - A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.03-24-2011
20110132542PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes an upper electrode that is installed within a processing chamber so as to face a lower electrode, supplies a gas through a plurality of gas supply holes provided in a facing surface and is vertically movable; a cover body installed above the upper electrode so as to airtightly seal a top opening of the processing chamber; a multiple number of gas exhaust holes provided in the facing surface; a ring-shaped member that is arranged along a circumference of the upper electrode, is vertically movable along with the upper electrode, and forms, at a lowered position, a processing space surrounded by the lower electrode, the upper electrode and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member.06-09-2011

Hachishiro Iizuka, Nirasaki-Shi JP

Patent application numberDescriptionPublished
20090000743SUBSTRATE PROCESSING APPARATUS AND SHOWER HEAD - A substrate processing apparatus includes a shower head having a shower plate of which gas injection portion is formed by a two layer structure made of metal and ceramic. The shower head has an upper plate made of a metal and having a gas inlet hole; a lower plate made of a metal and having a plurality of gas through holes; a gas diffusion space formed between the upper plate and the lower plate; and a cover member made of ceramic and having a plurality of gas injection openings positioned to correspond to the gas through holes, for covering an entire bottom surface of the lower plate. The shower head further includes a plurality of thermally conductive members provided to connect the upper plate with the lower plate in the gas diffusion space for transferring heat generated by processing upward.01-01-2009
20090314435PLASMA PROCESSING UNIT - A plasma processing unit of the present invention includes: a processing chamber having a dielectric wall; and a stage provided in the processing chamber, the stage having a placement surface onto which an object to be processed is placed. An induction plasma is generated in the processing chamber via the dielectric wall. The plasma processing unit is provided with a dielectric member capable of detachably covering at least the placement surface of the stage.12-24-2009

Hachishiro Iizuka, Hyogo JP

Patent application numberDescriptionPublished
20090038548SUBSTRATE TREATING APPARATUS AND TREATING GAS EMITTING MECHANISM - A film forming apparatus includes a process chamber 02-12-2009
20090266300SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PLACING TABLE - A film forming apparatus includes a process chamber 10-29-2009

Hachishiro Iizuka, Yamanashi JP

Patent application numberDescriptionPublished
20080314523GAS SUPPLY MECHANISM AND SUBSTRATE PROCESSING APPARATUS - A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect.12-25-2008

Patent applications by Hachishiro Iizuka, Yamanashi JP