| Patent application number | Description | Published |
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| 20090002435 | NOZZLE CHIP CLEANING APPARATUS OF INKJET PRINTER AND INKJET PRINTER WITH THE SAME - A nozzle chip cleaning apparatus of an inkjet printer with an improved supply/return structure for a cleaning solution for cleaning a nozzle chip includes a flexible bag to hold fluid and to contact a nozzle chip of an inkjet head. A lifting apparatus may move the flexible bag to be in contact with a surface of the nozzle chip. The nozzle chip cleaning apparatus employs a method in which a flexible bag wipes a surface of a nozzle chip cleaning solution. | 01-01-2009 |
| 20090141084 | IMAGE FORMING APPARATUS - An image forming apparatus that provides an easy installation and separation of a print head thereto and therefrom. The image forming apparatus can include a body, a print head including a nozzle part having a length at least a width as wide as a printable printing medium, a head mount provided at the body to mount the print head, at least one first connector provided at the head mount, and at least one second connector provided at the print head to correspond to the at least one first connector. The first connector and second connector are connected with each other as the print head is mounted to the head mount. | 06-04-2009 |
| 20090303280 | PRINTING HEAD CLEANING APPARATUS, IMAGE FORMING APPARATUS HAVING THE SAME AND METHOD TO CLEAN PRINTING HEAD - A printing head cleaning apparatus usable with an image forming apparatus includes a spraying unit to spray a quantity of cleaning solution using a sprayer and a cleaning shuttle to carry the spraying unit. The spraying unit includes a cleaning solution tank to store the cleaning solution sprayed by the sprayer, a spraying cam to operate the sprayer to selectively spray a quantity of the cleaning solution, and a cam driving member to cause the spraying cam to rotate according to movement of the cleaning shuttle. | 12-10-2009 |
| 20100002046 | INKJET IMAGE FORMING APPARATUS - An inkjet image forming apparatus includes a device to protect an ink sensing device operated without use of a separate drive source. The inkjet image forming apparatus includes at least one protecting device having a protecting member to protect the ink sensing device from impurities or to release the ink sensing device from protection, the protecting member being operated in linkage with the maintenance device to thereby be moved between the first position and the second position. | 01-07-2010 |
| 20110011337 | IMAGE FORMING APPARATUS - An image forming apparatus including a medium feeding unit to supply a print medium, a medium coating assembly to coat the print medium with a coating liquid, and an image forming unit to form an image on the coated print medium, the medium coating assembly including a container to store the coating liquid, a coating unit to coat the print medium with the coating liquid, a channel to guide the coating liquid to move between the container and the coating unit, and a controller to selectively control the coating liquid to be supplied from the container to the coating unit and to be recovered from the coating unit to the container through the same channel. | 01-20-2011 |
| Patent application number | Description | Published |
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| 20100137367 | NOVEL CRYSTALLINE BEPOTASTINE METAL SALT HYDRATE, METHOD FOR PREPARING SAME, AND PHARMACEUTICAL COMPOSITION COMPRISING SAME - The present invention discloses a non-hygroscopic crystalline bepotastine metal salt hydrate, a method for preparing same, and a pharmaceutical composition comprising same for treating or preventing a histamine-mediated disease or an allergic disease. | 06-03-2010 |
| 20100168433 | PROCESS FOR PREPARING BEPOTASTINE AND INTERMEDIATES USED THEREIN - A process for stereospecific preparation of bepotastine of formula (I) and novel intermediates used therein having formulae (II) to (IV) are provided. The inventive process comprises subjecting (RS)-4-[(4-chlorophenyl)(2-pyridyl)methoxy]piperidine to a reaction with a 4-halobutanoic acid l-menthyl ester, halo being chloro, bromo or iodo, in an organic solvent in the presence of a base to produce (RS)-bepotastine l-menthyl ester of formula (II), conducting a reaction of the compound of formula (II) with N-benzyloxycarbonyl L-aspartic acid in an organic solvent to induce selective precipitation of bepotastine l-menthyl ester.N-benzyloxycarbonyl L-aspartate of formula (III), filtering the precipitates formed in step 2) to isolate the compound of formula (III), treating the compound of formula (III) with a base to liberate bepotastine l-menthyl ester of formula (IV), and hydrolyzing the compound of formula (IV) in the presence of a base. The inventive process can provide bepotastine having a high optical purity of not less than 99.5% in a high yield, and thus, is useful in the development of anti-histamines and anti-allergic agents. | 07-01-2010 |
| Patent application number | Description | Published |
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| 20090057644 | Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices - A phase-change memory unit includes a lower electrode on a substrate, a phase-change material layer pattern including germanium-antimony-tellurium (GST) and carbon on the lower electrode, a transition metal layer pattern on the phase-change material layer pattern, and an upper electrode on the first transition metal layer pattern. The phase-change memory unit may have good electrical characteristics. | 03-05-2009 |
| 20090243117 | CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND METHODS OF MANUFACTURING THE SAME - A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern. | 10-01-2009 |
| 20100144135 | Method of manufacturing a phase changeable memory unit - A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer. | 06-10-2010 |
| 20100176365 | RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable material layer including respective first and second portions located on opposite sidewalls of the trench, respectively, where the first and second portions of the resistance variable material layer are electrically connected to the at least one bottom electrode. The device further includes a protective layer covering the resistance variable material layer within the trench, and a second insulating layer located within the trench and covering the protective layer within the trench | 07-15-2010 |
| 20110291066 | Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same - A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides. | 12-01-2011 |
