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Gwo
Shangjr Gwo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20090159995 | Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns - The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas. | 06-25-2009 |
| 20100012987 | Field Effect Transistor Based Sensor - The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte. | 01-21-2010 |
| 20110104401 | ANITREFLECTION STRUCTURES WITH AN EXCEPTIONAL LOW REFRACTIVE INDEX AND DEVICES CONTAINING THE SAME - Nanoporous polymers with gyroid nanochannels can be fabricated from the self-assembly of degradable block copolymer, polystyrene-b-poly(L-lactide) (PS-PLLA), followed by the hydrolysis of PLLA blocks. A well-defined nanohybrid material with SiO | 05-05-2011 |
Shang-Jr Gwo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110018038 | ION SENSITIVE FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREOF - The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer. | 01-27-2011 |
Shang-Jr Gwo, Hsin-Chu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110006035 | METHOD FOR MODIFYING SURFACE IN SELECTIVE AREAS AND METHOD FOR FORMING PATTERNS - A method for modifying a surface in selective areas and a method for forming patterns are described. A template is attached to a surface of a sample, and plasma is provided to selectively modify the surface by using the template as a mask. Consequently, a pattern consisting of a modified area and an unmodified area is formed on the surface of the sample. | 01-13-2011 |
Tsung-Ju Gwo, Banciao City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090235750 | Capacitive Ultrasonic Sensors and Display Devices Using the Same - A capacitive ultrasonic device is capable of detecting an object and providing information regarding an orientation of the object. The capacitive ultrasonic device includes a power source configured to generate a voltage signal, an array of sensor elements, each of the sensor elements being configured to generate an ultrasonic wave during a first period of the voltage signal and detect whether a wave is reflected from the object during a second period of the voltage signal when the voltage signal is applied thereto, and a control unit configured to activate a first portion of the array of sensor elements through the power source, and activate a second portion of the array of sensor elements when at least one of the first portion of the sensor elements detects a wave reflected from the object. | 09-24-2009 |
Tsung-Ju Gwo, Banqiao City TW
| Patent application number | Description | Published |
|---|---|---|
| 20080235936 | Capacitive Ultrasonic Transducer and Method of Fabricating the Same - A capacitive ultrasonic transducer includes a first electrode, an insulating layer formed on the first electrode, at least one support frame formed on the insulating layer, and a second electrode formed spaced apart from the first electrode, wherein the first electrode and the second electrode define an effective area of oscillation of the capacitive ultrasonic transducer, and the respective length of the first electrode and the second electrode defining the effective area of oscillation is substantially the same. | 10-02-2008 |