| Patent application number | Description | Published |
|---|
| 20090049319 | Electronic Power Conversion Circuit - An electronic power conversion circuit is presented for converting an input power to an output power. The circuit comprises at least one conversion block and a clock generator. Each conversion block comprises an input, an output and a plurality of charge storage elements and switches between the input and output. Each block is alternately switchable between a first state in which electric charge is loaded from the input and a second state in which electric charge is supplied as converted power to the output. The clock generator generates clock signals for controlling the switches and thereby switches between the first and second states. The circuit is characterized in that the clock generator comprises at least one input node for receiving at least one input parameter and in that the clock generator is provided for varying the frequency of the clock signals in relation to the at least one input parameter. | 02-19-2009 |
| 20090128386 | ANALOGUE-TO-DIGITAL CONVERTER AND METHOD FOR USING THE SAME - The present disclosure is related to an analogue-to-digital (A/D) converter ( | 05-21-2009 |
| 20090160752 | Pixel array with reduced sensitivity to defects - An array of active pixels comprises rows of pixels and row select lines for selecting rows of pixels. Each active pixel comprises a buffer amplifier for buffering an output of a photo-sensitive element. An output of the buffer amplifier can be selectively put into a high impedance state, by control of the input of the buffer amplifier, when there is a defect in the row select line for that pixel. This allows other rows, which are defect-free, to remain operating as normal. A disable line can be provided for a row of pixels and each pixel can have a switch connected to the disable line. Alternatively, a first supply line powers a row of pixels. Each pixel comprises a reset switch connected between a photo-sensitive element and the first supply line for resetting the photo-sensitive element. The array is configured such that, in the event of a defect in a row select line, the first supply line is set to ground, or a low voltage, and the reset switch is turned on to put the buffer amplifier into the high impedance state. | 06-25-2009 |
| 20090256060 | PIXEL ARRAY WITH GLOBAL SHUTTER - A pixel comprises a photo-sensitive element for generating charges in response to incident radiation and a sense node. A transfer gate is positioned between the photo-sensitive element and the sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node. A sample stage is connected to the output of the first buffer amplifier and is operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is being exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period. | 10-15-2009 |
| 20090259421 | SYSTEM AND METHOD FOR ESTIMATING REMAINING RUN-TIME OF AUTONOMOUS SYSTEMS BY INDIRECT MEASUREMENT - A system and method for estimating remaining run-time of an autonomous system by indirect measure is disclosed. In one aspect, the system includes a load circuit, an energy storage system (ESS) and an energy storage management system (ESM). The load circuit includes functional blocks. The ESS stores electric energy and is connected to the load circuit and configured to supply the varying electric current to the load circuit. The ESM is configured to estimate a remaining run-time of the autonomous system. The ESM includes an input connected to one of the functional blocks of the load circuit from which a first parameter being an indirect measure for the varying electric current supplied from the energy storage system to the load circuit is received. The ESM determines the remaining run-time from this first parameter. | 10-15-2009 |
| 20100148037 | PIXEL ARRAY WITH SHARED READOUT CIRCUITRY - A pixel array comprises a plurality of photo-sensitive elements arranged in rows and columns and readout circuitry for reading a value of a photo-sensitive element. Shared readout circuitry is provided for a pair of adjacent photo-sensitive elements. Adjacent instances of the shared readout circuitry are staggered with respect to one another. For a layout having shared readout circuitry for a pair of photo-sensitive elements, adjacent instances of the shared readout circuitry are offset by a horizontal distance of one column and a vertical distance of one row of the array. The shared readout circuitry can serve a pair of adjacent photo-sensitive elements in a row or column of the array, or a pair of photo-sensitive elements which are diagonally adjacent in the array. An improved yield and symmetry results from staggering instances of the shared readout circuitry. | 06-17-2010 |
| 20110101482 | METHOD OF MANUFACTURE OF A BACKSIDE ILLUMINATED IMAGE SENSOR - A method of manufacturing a backside illuminated image sensor includes providing a start material that has a layer of semiconductor material on a substrate. The layer of semiconductor material has a first face and a second, backside, face. The layer of semiconductor material is processed to form semiconductor devices in the layer adjacent the first face. At least a part of the substrate is removed to leave an exposed face. A passivation layer is formed on the exposed face, the passivation layer having negative fixed charges. The passivation layer can be Al2O3 (Sapphire). The passivation layer can have a thickness less than 5 μm, advantageously less than 1 μm, and more advantageously in the range 1 nm-150 nm. Another layer, or layers, can be provided on the passivation layer, including: an anti-reflective layer, a layer to improve passivation, a layer including a color filter pattern, a layer comprising a microlens. | 05-05-2011 |
| 20120002089 | PIXEL STRUCTURE WITH MULTIPLE TRANSFER GATES - A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate. | 01-05-2012 |
