Patent application number | Description | Published |
20100320550 | Spin-Torque Magnetoresistive Structures with Bilayer Free Layer - Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer. | 12-23-2010 |
20110051503 | Magnetic Devices and Structures - Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is presented. The magnetic device includes a ferromagnet, an antiferromagnet coupled to the ferromagnet, and a nonmagnetic metal proximate to the ferromagnet. The antiferromagnet provides uniaxial anisotropy to the magnetic device. A resistance of the nonmagnetic metal is dependent upon a direction of a magnetic moment of the ferromagnet. | 03-03-2011 |
20110169111 | OPTIMIZED FREE LAYER FOR SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY - A magnetic tunnel junction stack that includes a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), and a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to an MgO interface of the tunnel barrier layer and with a magnetic moment per unit area within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm | 07-14-2011 |
20110171493 | SPIN-TORQUE BASED MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNEL BARRIER - A magnetic tunnel junction stack including a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), a free magnetic layer adjacent to the tunnel barrier layer, and a layer of vanadium (V) adjacent to the free magnetic layer. | 07-14-2011 |
20120205759 | MAGNETIC TUNNEL JUNCTION WITH SPACER LAYER FOR SPIN TORQUE SWITCHED MRAM - A magnetic tunnel junction (MTJ) includes first and second magnetic layers; a tunnel barrier located between the first and second magnetic layers; a first spacer layer located between the first magnetic layer and the tunnel barrier, the first spacer layer comprising a non-magnetic material; and a first interfacial layer located between the first spacer layer and the tunnel barrier. | 08-16-2012 |
20120241878 | MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER - A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier. | 09-27-2012 |
20120241885 | MAGNETIC DEVICES AND STRUCTURES - Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is presented. The magnetic device includes a ferromagnet, an antiferromagnet coupled to the ferromagnet, and a nonmagnetic metal proximate to the ferromagnet. The antiferromagnet provides uniaxial anisotropy to the magnetic device. A resistance of the nonmagnetic metal is dependent upon a direction of a magnetic moment of the ferromagnet. | 09-27-2012 |
20120267733 | MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY - A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier. | 10-25-2012 |
20120281460 | NONCONTACT WRITING OF NANOMETER SCALE MAGNETIC BITS USING HEAT FLOW INDUCED SPIN TORQUE EFFECT - A mechanism is provided for noncontact writing. Multiple magnetic islands are provided on a nonmagnetic layer. A reference layer is provided under the nonmagnetic layer. A spin-current is caused to write a state to a magnetic island of the multiple magnetic islands by moving a heat source to heat the magnetic island. | 11-08-2012 |
20120329177 | SPIN-TORQUE MAGNETORESISTIVE STRUCTURES WITH BILAYER FREE LAYER - Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer. | 12-27-2012 |
20130005051 | MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY - A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier. | 01-03-2013 |
20130005052 | MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER - A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier. | 01-03-2013 |
20130094282 | MULTI-BIT SPIN-MOMENTUM-TRANSFER MAGNETORESISTENCE RANDOM ACCESS MEMORY WITH SINGLE MAGNETIC-TUNNEL-JUNCTION STACK - A magneto resistive random access memory system includes a first magnetic-tunnel-junction device coupled to a first bit-line, a second magnetic-tunnel-junction device coupled to a second bit-line, a selection transistor coupled to the first and second bit-lines and a word-line coupled to the selection transistor. | 04-18-2013 |
20140169080 | THERMAL SPIN TORQURE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY - A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction. | 06-19-2014 |
20140169082 | THERMAL SPIN TORQURE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY - A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction. | 06-19-2014 |
20140361389 | FREE LAYERS WITH IRON INTERFACIAL LAYER AND OXIDE CAP FOR HIGH PERPENDICULAR ANISOTROPY ENERGY DENSITY - A mechanism is provided for a spin torque transfer random access memory device. A tunnel barrier is disposed on a reference layer, and a free layer is disposed on the tunnel barrier. The free layer includes an iron layer as a top part of the free layer. A metal oxide layer is disposed on the iron layer, and a cap layer is disposed on the metal oxide layer. | 12-11-2014 |
20140361390 | MAGNETIC MATERIALS WITH ENHANCED PERPENDICULAR ANISOTROPY ENERGY DENSITY FOR STT-RAM - A mechanism is provided for a spin torque transfer random access memory device. A reference layer is disposed on a seed layer. A tunnel barrier is disposed on the reference layer. A free layer is disposed on the tunnel barrier. A cap layer is disposed on the free layer. The free layer includes a magnetic layer and a metal oxide layer, in which the magnetic layer is disposed on the tunnel barrier and the metal oxide layer is disposed on the magnetic layer. A metal material used in the metal oxide layer includes at least one of Ti, Ta, Ru, Hf, Al, La, and any combination thereof. | 12-11-2014 |
20140363569 | PERPENDICULAR MAGNETIZATION WITH OXIDE INTERFACE - A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer. | 12-11-2014 |
20140363701 | PERPENDICULAR MAGNETIZATION WITH OXIDE INTERFACE - A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer. | 12-11-2014 |
20140363902 | MAGNETIC MATERIALS WITH ENHANCED PERPENDICULAR ANISOTROPY ENERGY DENSITY FOR STT-RAM - A mechanism is provided for a spin torque transfer random access memory device. A reference layer is disposed on a seed layer. A tunnel barrier is disposed on the reference layer. A free layer is disposed on the tunnel barrier. A cap layer is disposed on the free layer. The free layer includes a magnetic layer and a metal oxide layer, in which the magnetic layer is disposed on the tunnel barrier and the metal oxide layer is disposed on the magnetic layer. A metal material used in the metal oxide layer includes at least one of Ti, Ta, Ru, Hf, Al, La, and any combination thereof. | 12-11-2014 |