| Patent application number | Description | Published |
|---|
| 20090217971 | Photovoltaic Devices with Enhanced Efficiencies Using High-Aspect-Ratio Nanostructures - Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light. | 09-03-2009 |
| 20090217972 | Techniques for Enhancing Efficiency of Photovoltaic Devices Using High-Aspect-Ratio Nanostructures - Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light. | 09-03-2009 |
| 20110012177 | Nanostructure For Changing Electric Mobility - A structure and a method for a semiconductor including a nanostructure semiconductor channel. The semiconductor may include a dielectric and an electrode, the electrode attached to the dielectric, a semiconductor channel may be disposed proximate to the dielectric, wherein the semiconductor channel has an electric mobility and is configured to have at least one dimension, and wherein the dielectric may be configured to apply a force at the at least one dimension. | 01-20-2011 |
| 20110095267 | Nanowire Stress Sensors and Stress Sensor Integrated Circuits, Design Structures for a Stress Sensor Integrated Circuit, and Related Methods - Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors and stress sensor integrated circuits include one or more pairs of gate-all-around field effect transistors, which include one or more nanowires as a channel region. The nanowires of each of the field effect transistors are configured to change in length in response to a mechanical stress transferred from an object. A voltage output difference from the field effect transistors indicates the magnitude of the transferred mechanical stress. | 04-28-2011 |
