Patent application number | Description | Published |
20120135273 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions - A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co | 05-31-2012 |
20120205758 | Magnetic element with improved out-of-plane anisotropy for spintronic applications - A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co | 08-16-2012 |
20120280336 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications - A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device. | 11-08-2012 |
20120286382 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 11-15-2012 |
20120299134 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 11-29-2012 |
20130221459 | Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications - A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device. | 08-29-2013 |
20130221460 | Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications - A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. | 08-29-2013 |
20130224521 | High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications - Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1 | 08-29-2013 |
20130230741 | High Thermal Stability Free Layer with High Out-of-Plane Anisotropy for Magnetic Device Applications - A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness <20 Angstroms is used to achieve high perpendicular magnetic anisotropy and enhanced thermal stability in magnetic devices. A dusting layer made of Co, Ni, Fe or alloy thereof is added to top and bottom surfaces of the CoFeB layer to increase magnetoresistance as well as improve Hc and Hk. Another embodiment includes a non-magnetic metal insertion in the CoFeB free layer. The CoFeB layer with elevated B content may be incorporated as a free layer, dipole layer, or reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Thermal stability is increased such that substantial Hk is retained after annealing to at least 400° C. for 1 hour. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased. | 09-05-2013 |
20130240963 | STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain - An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer. | 09-19-2013 |
20130264665 | Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications - A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface. | 10-10-2013 |
20130270523 | Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer - A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased. | 10-17-2013 |
20130307101 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 11-21-2013 |
20130309784 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 11-21-2013 |
20130334629 | MTJ Element for STT MRAM - An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein. | 12-19-2013 |
20140015079 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 01-16-2014 |
20140017820 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 01-16-2014 |
20140035074 | Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications - A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. A method for forming the magnetic element is also provided. | 02-06-2014 |
20140070341 | Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM - A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni) | 03-13-2014 |
20140077318 | Storage Element for STT MRAM Applications - An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS. | 03-20-2014 |
20140103469 | Seed Layer for Multilayer Magnetic Materials - A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof may be inserted between the seed layer and magnetic layer. The magnetic element has thermal stability to at least 400° C. | 04-17-2014 |
20140119105 | Adaptive Reference Scheme for Magnetic Memory Applications - A structure and method is described for an adaptive reference used in reading magnetic tunneling memory cells. A collection of magnetic tunneling memory cells are used to form a reference circuit and are coupled in parallel between circuit ground and a reference input to a sense amplifier. Each of the magnetic memory cells used to form the reference circuit are programmed to a magnetic parallel state or a magnetic anti-parallel state, wherein each different state produces a different resistance. By varying the number of parallel states in comparison to the anti-parallel states, where each of the two sates produce a different resistance, the value of the reference circuit resistance can be adjusted to adapt to the resistance characteristics of a magnetic memory data cell to produce a more reliable read of the data programmed into the magnetic memory data cell. | 05-01-2014 |
20140145792 | Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications - Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability. | 05-29-2014 |
20140217529 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 08-07-2014 |
20140217530 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 08-07-2014 |
20140217531 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 08-07-2014 |
20140306302 | Fully Compensated Synthetic Antiferromagnet for Spintronics Applications - A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers. | 10-16-2014 |
20140347918 | MRAM Write Pulses to Dissipate Intermediate State Domains - A write method for a STT-RAM MTJ is disclosed that substantially reduces the bit error rate caused by intermediate domain states generated during write pulses. The method includes a plurality of “n” write periods or pulses and “n−1” domain dissipation periods where a domain dissipation period separates successive write periods. During each pulse, a write current is applied in a first direction across the MTJ and during each domain dissipation period, a second current with a magnitude equal to or less than the read current is applied in an opposite direction across the MTJ. Alternatively, no current is applied during one or more domain dissipation periods. Each domain dissipation period has a duration of 1 to 10 ns that is equal to or greater than the precession period of free layer magnetization in the absence of spin torque transfer current. | 11-27-2014 |
20150041935 | High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications - Enhanced Hc and Hk in addition to higher thermal stability up to at least 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1 | 02-12-2015 |
20150056368 | High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications - Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1 | 02-26-2015 |
20150061055 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20150061056 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20150061057 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20150061058 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |