Patent application number | Description | Published |
20140377083 | COMPRESSOR SYSTEM FOR NATURAL GAS, METHOD OF COMPRESSING NATURAL GAS AND PLANT USING THEM - A compressor system including a driver machine, for example a motor or a turbine, an epicyclic gearbox, and a centrifugal compressor, wherein the driver machine, the epicyclic gearbox, and the centrifugal compressor are connected in train configuration, i.e. the output rotary member of the driver machine is coupled to the input rotary member of the epicyclic gearbox and the output rotary member of the epicyclic gearbox is coupled to the input rotary member of the centrifugal compressor. The gear ratio of the epicyclic gearbox is greater than one, typically much more than one, thus increasing the rotation speed from input to output. | 12-25-2014 |
20150152884 | HIGH PRESSURE RATIO COMPRESSORS WITH MULTIPLE INTERCOOLING AND RELATED METHODS - Turbo-compressor/generator trains including high pressure ratio compressors with multiple intercooling and related methods are provided. A high pressure ratio compressor with multiple intercooling includes a casing with plural chambers, one or more shafts penetrating inside the chambers, and impellers mounted on the one or more shafts inside the chambers, respectively. Each chamber has a gas inlet and a gas outlet to allow gas flow to be input into and to be output from the respective chamber. A gas flow is successively compressed in each of the chambers, and is cooled outside the compressor when transferring from one chamber to a next chamber among the plural chambers. | 06-04-2015 |
Patent application number | Description | Published |
20100032793 | METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY - The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer. | 02-11-2010 |
20100035418 | PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS - The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices. | 02-11-2010 |
20110180911 | METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY - The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer. | 07-28-2011 |
20110291247 | RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS - The present invention relates to a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment. | 12-01-2011 |
20110294245 | ADAPTATION OF THE LATTICE PARAMETER OF A LAYER OF STRAINED MATERIAL - The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A | 12-01-2011 |
20120199956 | METHOD FOR RECYCLING A SOURCE SUBSTRATE - The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not being separated from the rest of the source substrate during a prior removal step. The process includes selective electromagnetic irradiation of the source substrate at a wavelength such that the damaged material of the surface region absorbs the electromagnetic irradiation. The present invention also relates to a recycled source substrate and to a process for transferring a layer from a source substrate recycled for this purpose. | 08-09-2012 |
20130285067 | METHOD FOR FORMING A BURIED METAL LAYER STRUCTURE - The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy. | 10-31-2013 |
20150115290 | METHOD OF MANUFACTURING STRUCTURES OF LEDS OR SOLAR CELLS - The invention disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate. | 04-30-2015 |
20150155331 | METHOD OF COLLECTIVE MANUFACTURE OF LEDS AND STRUCTURE FOR COLLECTIVE MANUFACTURE OF LEDS - The disclosure relates to a method of collective manufacturing of light-emitting diode (LED) devices comprising formation of elemental structures, each comprising an n-type layer, an active layer and a p-type layer, the method comprising: —reduction of the lateral dimensions of part of each elemental LED structure; —formation of a portion of insulating material on the sides of the elemental structures; —formation of n-type electrical contact pads and p-type electrical contact pads; —deposition of a conductive material layer; on the elemental structures and polishing of the conductive material layer; and—bonding by molecular adhesion of a second substrate on the polished surface of the structure. | 06-04-2015 |
Patent application number | Description | Published |
20080199608 | Method for the anticorrosive Treatment of Hollow Bodies, Method for Producing a Metallic Structure Treated According to Said Method, and Method for Maintaining the Structure - The invention involves the treatment of a hollow body having a difficult-to-access surface ( | 08-21-2008 |
20110021648 | SILICONE FOAM WITH ADDED THERMAL AGENT AND USES OF THE FOAM - The foam comprises a mixture of silica, a polyorganosiloxane resin and a polyorganosiloxane hardener, added with a thermal insulator and an adhesion agent. The thermal insulator is ammonium polyphosphate. The foam is well appropriate as a filling and partitioning product in railway applications. | 01-27-2011 |
20120234471 | DECORATIVE COATING, WITH BUILT-IN ADHESIVE, FOR A TRANSPORT VEHICLE - The present disclosure relates to a decorative coating to be applied onto an outer surface of a transport vehicle, said coating including a decorative adhesive that is consecutively made up a bottom adhesive layer, a layer for mechanically mounting the adhesive, and an illustrated layer comprising at least one printed pattern, the adhesive being applied onto the outer surface of the vehicle. Said coating also includes a colored paint layer that is applied onto the outer surface of the vehicle outside the surface covered by the adhesive being continuous. Said coating moreover includes a protective layer that is applied onto the continuous outer surfaces of the paint layer and the adhesive. The present disclosure also relates to a decoration method and to a decoration renewing method. | 09-20-2012 |