Patent application number | Description | Published |
20120171822 | MANUFACTURING METHOD FOR LTPS TFT ARRAY SUBSTRATE - A manufacturing method for a low temperature polysilicon (LTPS) thin film transistor (TFT) array substrate, comprising: forming a polysilicon layer on a substrate; forming a gate insulating layer on the polysilicon layer; forming a gate metal layer on the gate insulating layer; and patterning the gate metal layer, the gate insulating layer and the polysilicon layer by using a half tone mask (HTM) or a gray tone mask (GTM) so as to obtain a gate electrode and a polysilicon semiconductor pattern in a single mask process, a central part of the polysilicon semiconductor pattern is covered by the gate electrode, and the polysilicon semiconductor pattern has two parts, which are not covered by the gate electrode at two sides of the gate electrode, for forming a source region and a drain region. | 07-05-2012 |
20120287103 | PIXEL UNIT CIRCUIT, PIXEL ARRAY, DISPLAY PANEL AND DISPLAY PANEL DRIVING METHOD - A pixel circuit array is disclosed and includes pixel unit circuits, and each of the pixel unit circuit includes a precharge circuit, a compensation circuit, a holding circuit, a driving circuit, a light emitting circuit, a first power supply terminal, a second power supply terminal, a third power supply terminal, a scanning control terminal, a first control terminal and a second control terminal. With the pixel unit circuit, as long as the inputted direct-current reference voltage and the data voltage signal are not varied, the current delivered to the OLED remains constant, thus the uniformity of the OLED can be compensated for. | 11-15-2012 |
20120289006 | METHOD OF MANUFACTURING POLY-SILICON TFT ARRAY SUBSTRATE - An embodiment of the present disclosure relates to a method of manufacturing a poly-silicon TFT array substrate, which accomplishes a patterning process to form a gate electrode, a poly-silicon semiconductor pattern and a pixel electrode with one process by using an HTM or GTM mask. | 11-15-2012 |
20130207100 | OXIDE TFT ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME - Embodiments of the present invention provide an oxide TFT array substrate and a method for manufacturing the same, and an electronic device comprising the same. In the embodiment of the method, an active layer and a stop layer are sequentially formed on a gate insulating layer and are patterned twice by a single-step continuous etch method. The embodiments of the present invention can avoid damages upon the surface and characteristics of an oxide semiconductor film during the processes such as removal, cleaning and the like, so the characteristics and yield of products can be effectively enhanced, and the costs for research and preparation are reduced. | 08-15-2013 |
20130285044 | DISPLAY DEVICE, ARRAY SUBSTRATE, AND THIN FILM TRANSISTOR - Embodiments of the present invention relate to a display device, an array substrate, and a thin film transistor. The thin film transistor comprises a gate, an active layer and a gate insulating layer disposed between the gate and the active layer, the active layer is an oxide semiconductor, and the gate insulating layer comprises at least one layer of inorganic insulating thin film. With the gate insulating layer of the thin film transistor, it is possible that an adverse effect on the oxide semiconductor given by hydrogen-containing groups is effectively avoided, stability of the whole TFT device is enhanced to the most extent, and yield of final products is increased. | 10-31-2013 |
20140077203 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE - According to embodiments of the present invention, there are provided a thin film transistor, an array substrate and method of manufacturing the same, and a display device. The thin film transistor comprises: a gate electrode, a gate insulating layer, a semiconductor active layer, an etch stop layer, a source electrode and a drain electrode, wherein, the gate insulating layer is interposed between the gate electrode and the semiconductor active layer, the etch stop layer covers the semiconductor active layer, and has a first via hole and a second via hole formed therein which expose a part of the semiconductor active layer, the source electrode of the thin film transistor contacts with the semiconductor active layer through the first via hole, and the drain electrode of the thin film transistor contacts with the semiconductor active layer through the second via hole. | 03-20-2014 |
20140117359 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE - The present invention relate to a display device, an array substrate and a method for manufacturing the same. The array substrate includes a substrate and a thin film transistor and a pixel electrode which are formed on the substrate, the thin film transistor includes a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes and is overlaid with a passivation layer, the active layer of the thin film transistor is of an oxide semiconductor, and the passivation layer comprises at least one layer of inorganic insulating thin film or organic insulating thin film. With this array substrate, the oxide semiconductor can be effectively avoided from being affected by hydrogen-containing groups, so that stability of the whole TFT device is enhanced to a great extent, and yield of final products is increased. | 05-01-2014 |
20140167036 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE - The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (V | 06-19-2014 |
20140175434 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY APPARATUS - A thin film transistor, comprising: a substrate; a first electrode formed on the substrate; a first insulation layer formed on the first electrode; a gate electrode formed on the first insulation layer; a second insulation layer formed on the gate electrode; an active layer penetrating through the first and second insulation layers and electrically isolated from the gate electrode; and a second electrode formed on the active layer and electrically connected to the first electrode through the active layer, wherein the first electrode is one of a source electrode and a drain electrode, and the second electrode is the other of the source electrode and the drain electrode. | 06-26-2014 |