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Grit
Grit Bonsdorf, Dresden DE
| Patent application number | Description | Published |
|---|---|---|
| 20090121314 | Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device - The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region. | 05-14-2009 |
Grit Hansler (-Richter), Neuenburg DE
| Patent application number | Description | Published |
|---|---|---|
| 20080262225 | Use of metal complex compounds as oxidation catalysts - Use of metal complex compounds of formula | 10-23-2008 |
| 20090068282 | Use of metal complex compounds as oxidation catalysts - Use of metal complex compounds of formula | 03-12-2009 |
Grit Huttl, Freiberg DE
| Patent application number | Description | Published |
|---|---|---|
| 20090152108 | Target Arrangement - The invention relates to a target arrangement comprising a tubular-shaped carrier element and a hollow-cylindrical target having at least one target material, said target comprising at least one one-piece tube segment which at least partially surrounds the carrier element. Said carrier element and the tube segment are partially interconnected in a material fit by at least two plastically deformable compensating means. The invention also relates to a method for producing said type of target arrangement and a tubular segment. | 06-18-2009 |
Grit Scholz, Remscheid DE
| Patent application number | Description | Published |
|---|---|---|
| 20080203784 | Fitting for a vehicle seat - The present invention relates to a fitting ( | 08-28-2008 |
Grit Schwalbe-Dietrich, Dresden DE
| Patent application number | Description | Published |
|---|---|---|
| 20090219773 | Integrated Circuit, Method for Acquiring Data and Measurement System - An embodiment of an integrated circuit comprises a plurality of cells. Each cell comprises a first supply node, a second supply node, a series connection with a first transistor, a second transistor and an electrical element. The series connection is coupled between the first and the second supply node. The electrical element includes a first and a second node. A third transistor is coupled between the first node of the electrical element and a first output node of the cell and a fourth transistor is coupled between the second node of the electrical element and the second output node of the cell. A control terminal of the first, the third and the fourth transistor is coupled to a first control node of the cell and a control terminal of the second transistor is coupled to a second control node of the cell. | 09-03-2009 |
Grit Sommer, Grafing DE
| Patent application number | Description | Published |
|---|---|---|
| 20080224302 | Semiconductor Module - A module includes a semiconductor chip and a conductive layer arranged over the semiconductor chip. The module also includes a spacer structure arranged to deflect the conductive layer away from the semiconductor chip. | 09-18-2008 |
| 20090026616 | INTEGRATED CIRCUIT HAVING A SEMICONDUCTOR SUBSTRATE WITH A BARRIER LAYER - An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element. | 01-29-2009 |
| 20090108401 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. One embodiment provides a semiconductor chip. The semiconductor chip includes a first electrode of a capacitor. An insulating layer is arranged on top of the first electrode. A second electrode of the capacitor is applied over the insulating layer, wherein the second electrode is made of a conductive layer arranged over the semiconductor chip. | 04-30-2009 |
Grit Sommer, Grafing Bei Munchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20080217784 | SUBSTRATE WITH FEEDTHROUGH AND METHOD FOR PRODUCING THE SAME - A substrate has at least one feedthrough with at least one channel from a first main surface of the substrate to a second main surface of the substrate. The at least one channel is closed off with a first material. The at least one closed-off channel is filled with an electrically conductive second material. | 09-11-2008 |
| 20080268638 | Substrate with Feedthrough and Method for Producing the Same - A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel. | 10-30-2008 |