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Grimbergen
Cornelis Antonius Grimbergen, Abcoude NL
| Patent application number | Description | Published |
|---|---|---|
| 20110245666 | Mammography-Apparatus and Method for Screening the Occurrence of Malignant Cells - A mammography-apparatus for detecting malignant cells in a breast comprising an X-ray source, an X-ray detector and a paddle for pressing the breast against said X-ray detector, wherein the mammography-apparatus further comprises a non-focussed laser-beam source for pulsed laser-light, which during use is aimed at the breast, and said apparatus comprises at least one non-contact ultrasound detector for contact-free detection of an ultrasound originating from said breast so as to screen the occurrence or non-occurrence of said malignant cells. | 10-06-2011 |
Jos Grimbergen, Leiden NL
| Patent application number | Description | Published |
|---|---|---|
| 20100150900 | Dry Powder Fibrin Sealant - The invention provides a composition comprising a mixture of first microparticles that comprise fibrinogen and trehalose, and second microparticles that comprise thrombin and trehalose. The invention further provides methods for treating wounds by administering the novel microparticle composition. | 06-17-2010 |
Joseph Maria Grimbergen, Leiden NL
| Patent application number | Description | Published |
|---|---|---|
| 20110251580 | POWDER DELIVERY DEVICE - A device for the topical dispensing of a powder, typically a powder medicament, comprises, or is adapted to be coupled to, a powder receptacle and a gasflow generator. The gasflow generator is adapted, in use, to cause gas to flow through the device, which further comprises an agitator by which the powder and/or the powder receptacle can be mechanically agitated. Actuation of the gasflow generator, which causes gas to flow through the device and to entrain powder from the powder receptacle, thereby to dispense powder from the device, is accompanied by actuation of the agitator, causing the powder receptacle to be mechanically agitated, thereby facilitating the release of powder from the powder receptacle. | 10-13-2011 |
Michael Grimbergen, Redwood City, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080261335 | ENDPOINT DETECTION FOR PHOTOMASK ETCHING - Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask. | 10-23-2008 |
| 20080272089 | Monitoring etching of a substrate in an etch chamber - A substrate etching apparatus comprises a chamber having a wall with a window, substrate support pedestal, energy source, and monitoring assembly with signal sensor capable of detecting reflected radiation from the substrate from directly above the substrate after the radiation propagates through the window in the wall. An etching method comprises the steps of: providing a substrate in a chamber, etching a channel or trench in the substrate by coupling energy through the wall of the chamber to energize an etch gas in the chamber, detecting radiation reflected from the substrate from directly above the substrate after the radiation propagates through the wall and evaluating the detected radiation to monitor the depth of etching of the channel or trench being etched on the substrate. | 11-06-2008 |
| 20090014409 | ENDPOINT DETECTION FOR PHOTOMASK ETCHING - Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask. | 01-15-2009 |
| 20090325387 | METHODS AND APPARATUS FOR IN-SITU CHAMBER DRY CLEAN DURING PHOTOMASK PLASMA ETCHING - Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O | 12-31-2009 |
Michael N. Grimbergen, Redwood City, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100224321 | INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF - Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching. | 09-09-2010 |
| 20100276391 | INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF - Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase. | 11-04-2010 |