Patent application number | Description | Published |
20110293888 | PATTERNED INORGANIC LAYERS, RADIATION BASED PATTERNING COMPOSITIONS AND CORRESPONDING METHODS - Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch. | 12-01-2011 |
20120070613 | PATTERENED INORGANIC LAYERS, RADIATION BASED PATTERNING COMPOSITIONS AND CORRESPONDING METHODS - Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch. | 03-22-2012 |
20120223418 | SOLUTION PROCESSIBLE HARDMASKS FOR HIGH RESOLUTION LITHOGRAPHY - Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks. | 09-06-2012 |
20150056542 | ORGANOMETALLIC SOLUTION BASED HIGH RESOLUTION PATTERNING COMPOSITIONS - Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds. | 02-26-2015 |