| Patent application number | Description | Published |
|---|
| 20080237861 | Novel Fluorine-Free Precursors and Methods for the Deposition of Conformal Conductive Films for Nanointerconnect Seed and Fill - A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor. | 10-02-2008 |
| 20090124039 | LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS - A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates. | 05-14-2009 |
| 20090305458 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS - Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. | 12-10-2009 |
| 20100112211 | ZIRCONIUM, HAFNIUM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD - Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation. | 05-06-2010 |
| 20100154835 | CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS - A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF | 06-24-2010 |
| 20100279011 | NOVEL BISMUTH PRECURSORS FOR CVD/ALD OF THIN FILMS - Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi | 11-04-2010 |
| 20100317150 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS - Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. | 12-16-2010 |
| 20110263100 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS - Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. | 10-27-2011 |
