| Patent application number | Description | Published |
|---|
| 20080254569 | Semiconductor Device - One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium. | 10-16-2008 |
| 20090032890 | MULTILAYER DIELECTRIC - An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed. | 02-05-2009 |
| 20090200541 | MAKING A STRUCTURE - A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface. | 08-13-2009 |
| 20100078634 | SEMICONDUCTOR DEVICE - One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead. | 04-01-2010 |
| 20100219411 | SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL - A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc. | 09-02-2010 |
| 20100279207 | Fuel cell with integral manifold - A MEMS-based fuel cell has a substrate, an electrolyte in contact with the substrate, a cathode in contact with the electrolyte, an anode spaced apart from the cathode and in contact with the electrolyte, and an integral manifold for supplying either a fuel or an oxidant or both together, the integral manifold extending over at least a portion of the electrolyte and over at least one of the anode and cathode. Methods for making and using arrays of the fuel cells are disclosed. | 11-04-2010 |
| 20100279514 | MULTILAYER DIELECTRIC - A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects. | 11-04-2010 |
