| Patent application number | Description | Published |
|---|
| 20090042490 | Three-dimensional network for chemical mechanical polishing - The polishing pad ( | 02-12-2009 |
| 20090047871 | Interpenetrating network for chemical mechanical polishing - Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continous non-fugitive phase and a substaintially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates. | 02-19-2009 |
| 20090047876 | Chemical mechanical polishing pad with controlled wetting - Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising a polishing texture that exhibits a dimensionless roughness, R, is between 0.01 and 0.75. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates. | 02-19-2009 |
| 20090047877 | LAYERED-FILAMENT LATTICE FOR CHEMICAL MECHANICAL POLISHING - The polishing pad ( | 02-19-2009 |
| 20090047883 | Interconnected-multi-element-lattice polishing pad - The polishing pad ( | 02-19-2009 |
| 20090258573 | Chemical Mechanical Polishing Method - Shape memory chemical mechanical polishing methods are provided that use shape memory chemical mechanical polishing pads having a polishing layer in a densified state, wherein the polishing pad thickness and/or groove depth is monitored and the polishing layer is selectively exposed to an activating stimulus causing a transition from the densified state to a recovered state. | 10-15-2009 |
| 20090280725 | Interpenetrating network for chemical mechanical polishing - Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates. | 11-12-2009 |
| 20100159810 | High-rate polishing method - The invention provides a method for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The substrate is fixed within a carrier fixture having a channel-free surface. The method comprises securing the substrate in the carrier fixture with the channel-free surface adjacent and parallel to a polishing surface of the polishing pad. The polishing pad has multiple grooves with high-rate paths. The method includes applying polishing medium to the polishing pad adjacent the carrier fixture; and rotating the polishing pad and carrier fixture to polish the substrate with the polishing pad and the polishing medium wherein the channel-free surface of the carrier fixture presses against the polishing pad to impede flow of the polishing medium into the substrate and the high-rate groove paths traverse the carrier fixture to promote flow of the polishing medium to the substrate. | 06-24-2010 |
| 20100159811 | High-rate groove pattern - The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The polishing pad comprises a center, an inner region surrounding the center, a transition region connecting grooves from the inner region to an outer region surrounding the inner region. The outer region has multiple grooves with a high-rate path. The transition region is adjacent the outer region and within a radius from the center defined as follows: | 06-24-2010 |
