Patent application number | Description | Published |
20090267223 | MEMS Package Having Formed Metal Lid - A hermetic MEMS device ( | 10-29-2009 |
20090302438 | IC HAVING VOLTAGE REGULATED INTEGRATED FARADAY SHIELD - An integrated circuit (IC) includes a substrate having a top semiconductor surface and a bottom surface, and integrated circuitry including an analog subcircuit and at least one digital subcircuit formed on the top semiconductor surface. A plurality of through substrate vias (TSVs) extend through the substrate. At least one integrated Faraday shield includes a top and a bottom electrically conducting member that are coupled by the TSVs which surround the analog subcircuit and/or the digital subcircuit. At least one voltage regulator supplies a regulated power supply voltage that is coupled to the integrated Faraday shield that surrounds the analog subcircuit. | 12-10-2009 |
20100167424 | VARIABLE THICKNESS SINGLE MASK ETCH PROCESS - The present invention relates to a method of performing a variable film etch using a variable thickness photomask material. Essentially, a thickness of an adjustable film layer is measured and converted into a contour map of film thickness over a region of a semiconductor body (e.g., wafer). An etch mask layer (e.g., photoresist) is then formed above the adjustable film layer and is selectively patterned by a reticleless exposure system (e.g., DMD exposure system). The selective patterning subjects different regions of the etch mask layer to varying exposure times dependent upon the thickness of the underlying adjustable film. The more etching needed to provide the underlying film to a nominal thickness, the longer the exposure of the etch mask. Therefore, the resultant etch mask, after exposure, comprises a topology allowing for various degrees of selective etching of the underlying film resulting in a uniform film. | 07-01-2010 |
20100167427 | PASSIVE DEVICE TRIMMING - The present invention relates to a method for trimming passive devices during fabrication to account for process variations. More particularly, the present invention relates to a method by which an adjustable device layer comprised within a passive device (e.g., resistor body, capacitor electrodes) can be measured and subsequently trimmed (e.g., etched to reduce size) during processing to correct for process variations. Essentially, an operational parameter is measured for a plurality of passive devices. The measurements are used to form an adjustment map for a region of a semiconductor body (e.g., wafer) comprising information pertaining to operational parameters as a function of spatial coordinates. The adjustment map is utilized by a DMD projector configured to pattern openings into a hardmask configured over the adjustable device layer. The adjustable device layer is then etched in regions not protected by the hardmask, thereby effectively trimming the passive device according to the adjustment map. | 07-01-2010 |
20100193909 | THERMALLY ENHANCED SEMICONDUCTOR DEVICES - Thermal communication of matched transistors formed in lower electrical resistance subregions of first and second active substrate regions is provided by thermally conductive members formed to extend over isolation regions between higher electrical resistance subregions of the first and second regions. In one form, thermal communication is done, with or without contacts, through insulating layers to metal layers formed over the substrate. In another form, thermal communication is done through a polysilicon layer formed over the substrate. | 08-05-2010 |
20120275122 | USING A COUPLING ORTHOGONALIZATION APPROACH TO REDUCE CROSS-TALK - An apparatus is provided. The apparatus generally comprises a plurality of pairs of differential transmission lines. The plurality of pairs of differential transmission lines includes a set of pairs of differential transmission lines with each pair of differential transmission lines from the set of pairs of differential transmission lines including at least one twist to alternate current direction. Also, the plurality of differential transmission lines are arranged such that alternating current directions substantially eliminate cross-talk across the plurality of pairs of differential transmission lines. | 11-01-2012 |
20130062105 | APPARATUS FOR BROADBAND MATCHING - An apparatus is provided. The apparatus comprises a substrate and a circuit trace. The substrate includes a region that is adapted to receive a discrete component, a metal layer, a dielectric layer formed over the metal layer, a window formed in the metal layer that underlies the region, and a conductive strap that extends across the window. The circuit trace is formed on the dielectric layer and is discontinuous across the region. | 03-14-2013 |
20130134579 | Structure for High-Speed Signal Integrity in Semiconductor Package with Single-Metal-Layer Substrate - A semiconductor chip ( | 05-30-2013 |
20140346887 | GALVANIC ISOLATOR - A system on a package (SOP) can include a galvanic isolator. The galvanic isolator can include an input stage configured to transmit an input RF signal in response to receiving an input modulated signal. The galvanic isolator can also include a resonant coupler electrically isolated from the input stage by a dielectric. The resonant coupler can be configured to filter the input RF signal and transmit an output RF signal in response to the input RF signal. The galvanic isolator can further include an output stage electrically isolated from the resonant coupler by the dielectric. The output stage can be configured to provide an output modulated signal in response to receiving the output RF signal. | 11-27-2014 |