Graham E.

Graham E. Gintz, Hilton Head Island, SC US

Patent application number	Description	Published
20100038595	System and methods of dispersion of nanostructures in composite materials - Apparatus and methods according to various aspects of the present invention may operate in conjunction with composite matrix material and reinforcement material, such as nanostructures. The nanostructures may be evenly dispersed and/or aligned in the matrix material through application of an electromagnetic field, resulting in a nanocomposite material. In one embodiment, the nanocomposite material is suitable for large scale processing.	02-18-2010

Patent application number	Description	Published
20090169797	METHOD FOR REINFORCING AND REINFORCED SYNTHETIC INLAYS AND SEAMS - A reinforced seam/inlay and method for forming such seam/inlay to join pieces of synthetic turf material together are disclosed. The reinforced seam/inlay structure comprises abutted edges of first and second synthetic turf pieces having a backing joined together; a seaming cloth/tape material coated with an adhesive/glue, volatile solvent or heat activated material applied is positioned beneath the abutted edges of synthetic turf pieces wherein said abutted edges are adhered to said seaming cloth/tape material; and reinforcement fastener elements inserted through both the backing of the synthetic turf material, through the adhesive and the seaming cloth/tape material; or seam/inlay structure comprises of overlapping edges of first and second synthetic turf pieces having a backing joined together; the backing without seaming cloth/tape material can be coated with an adhesive/glue, volatile solvent or heat activated material or not and reinforcement fastener elements inserted through both the backing of the synthetic turf material.	07-02-2009

Patent application number	Description	Published
20110148251	SYSTEMS AND METHODS FOR OPERATING PIEZOELECTRIC SWITCHES - Systems and methods for operating piezoelectric switches are disclosed. A piezoelectric switching system includes a first actuator, a second actuator, and a bias voltage source. The first actuator has a first body electrode, a first gate electrode, and a first contact region. The second actuator has a second body electrode, a second gate electrode, and a second contact region. The first and second contact regions are separated by a gap. The bias voltage source applies a bias voltage to the body electrodes. The bias voltage is lower in magnitude than an actuation voltage for the switch. The gate electrodes receive a switching voltage. The switching voltage causes at least one of the first and second actuators to bend, thereby closing the gap such that the second contact region electrically contacts the first contact region. The difference between the switching voltage and the bias voltage exceeds the actuation voltage of the switch.	06-23-2011